SMBJ5.0 thru 188CA
Vishay Semiconductors
for merly General Semiconductor
Surface Mount TRANSZORB®
T ransient Voltage Suppressors Stand-off Voltage 5.0 to 188V
Peak Pulse Power 600W
0.180 (4.57)
0.160 (4.06) 0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Dimensions in inches
and (millimeters)
DO-214AA
(SMB J-Bend)
Features
Underwriters Laborator y Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
Low profile package with built-in strain relief for surface
mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
600W peak pulse power capability with a 10/1000µs
wavefor m, repetition rate (duty cycle): 0.01%
Ve ry fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-214AA molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.003 oz., 0.093 g
Flammability: Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 2K per Bulk box, 20K/carton
52 750 per 7" plastic Reel (12mm tape), 15K/carton
5B 3.2K per 13" plastic Reel (12mm tape), 32K/carton
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN) 0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
Extended
Voltage Range
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak pulse power dissipation with PPPM Minimum 600 W
a 10/1000µs wavefor m(1)(2) (Fig. 1)
Peak pulse current with a 10/1000µs waveform(1) IPPM See Table Below A
Peak forward surge current 8.3ms single half sine-wave IFSM 100 A
uni-directional only(2)
Typical thermal resistance, junction to ambient(4) RθJA 100 °C/W
Typical thermal resistance, junction to lead RθJL 20 °C/W
Operating junction and storage temperature range TJ, TSTG 55 to +150 °C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.2 x 0.2(5.0 x 5.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88392 www.vishay.com
26-Sep-02 1
www.vishay.com Document Number 88392
226-Sep-02
SMBJ5.0 thru 188CA
Vishay Semiconductors
for merly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 50A (uni-directional only)
Device Breakdown Voltage Maximum Maximum Maximum
Device Type Marking V(BR) at IT(1) Test Stand-off Reverse Leakage Peak Pulse Surge Clamping
Modified Code (V) Current Voltage at VWM Current IPPM Voltage at IPPM
“J” Bend Lead UNI BI Min Max IT(mA) VWM (V) ID (µA) (3) (A)(2) VC(V)
+SMBJ5.0 KD KD 6.40 7.82 10 5.0 800 62.5 9.6
+SMBJ5.0A(5) KE KE 6.40 7.07 10 5.0 800 65.2 9.2
+SMBJ6.0 KF KF 6.67 8.15 10 6.0 800 52.6 11.4
+SMBJ6.0A KG KG 6.67 7.37 10 6.0 800 58.3 10.3
+SMBJ6.5 KH AH 7.22 8.82 10 6.5 500 48.8 12.3
+SMBJ6.5A KK AK 7.22 7.98 10 6.5 500 53.6 11.2
+SMBJ7.0 KL KL 7.78 9.51 10 7.0 200 45.1 13.3
+SMBJ7.0A KM KM 7.78 8.60 10 7.0 200 50.0 12.0
+SMBJ7.5 KN AN 8.33 10.2 1.0 7.5 100 42.0 14.3
+SMBJ7.5A KP AP 8.33 9.21 1.0 7.5 100 46.5 12.9
+SMBJ8.0 KQ AQ 8.89 10.9 1.0 8.0 50 40.0 15.0
+SMBJ8.0A KR AR 8.89 9.83 1.0 8.0 50 44.1 13.6
+SMBJ8.5 KS AS 9.44 11.5 1.0 8.5 20 37.7 15.9
+SMBJ8.5A KT AT 9.44 10.4 1.0 8.5 20 41.7 14.4
+SMBJ9.0 KU AU 10.0 12.2 1.0 9.0 10 35.5 16.9
+SMBJ9.0A KV AV 10.0 11.1 1.0 9.0 10 39.0 15.4
+SMBJ10 KW AW 11.1 13.6 1.0 10 5.0 31.9 18.8
+SMBJ10A KX AX 11.1 12.3 1.0 10 5.0 35.3 17.0
+SMBJ11 KY KY 12.2 14.9 1.0 11 5.0 29.9 20.1
+SMBJ11A KZ KZ 12.2 13.5 1.0 11 5.0 33.0 18.2
+SMBJ12 LD BD 13.3 16.3 1.0 12 5.0 27.3 22.0
+SMBJ12A LE BE 13.3 14.7 1.0 12 5.0 30.2 19.9
+SMBJ13 LF LF 14.4 17.6 1.0 13 1.0 25.2 23.8
+SMBJ13A LG LG 14.4 15.9 1.0 13 1.0 27.9 21.5
+SMBJ14 LH BH 15.6 19.1 1.0 14 1.0 23.3 25.8
+SMBJ14A LK BK 15.6 17.2 1.0 14 1.0 25.9 23.2
+SMBJ15 LL BL 16.7 20.4 1.0 15 1.0 22.3 26.9
+SMBJ15A LM BM 16.7 18.5 1.0 15 1.0 24.6 24.4
+SMBJ16 LN LN 17.8 21.8 1.0 16 1.0 20.8 28.8
+SMBJ16A LP LM 17.8 19.7 1.0 16 1.0 23.1 26.0
+SMBJ17 LQ LQ 18.9 23.1 1.0 17 1.0 19.7 30.5
+SMBJ17A LR LR 18.9 20.9 1.0 17 1.0 21.7 27.6
+SMBJ18 LS BS 20.0 24.4 1.0 18 1.0 18.6 32.2
+SMBJ18A LT BT 20.0 22.1 1.0 18 1.0 20.5 29.2
+SMBJ20 LU LU 22.2 27.1 1.0 20 1.0 16.8 35.8
+SMBJ20A LV LV 22.2 24.5 1.0 20 1.0 18.5 32.4
+SMBJ22 LW BW 24.4 29.8 1.0 22 1.0 15.2 39.4
+SMBJ22A LX BX 24.4 26.9 1.0 22 1.0 16.9 35.5
+SMBJ24 LY BY 26.7 32.6 1.0 24 1.0 14.0 43.0
+SMBJ24A LZ BZ 26.7 29.5 1.0 24 1.0 15.4 38.9
+SMBJ26 MD CD 28.9 35.3 1.0 26 1.0 12.9 46.6
+SMBJ26A ME CE 28.9 31.9 1.0 26 1.0 14.3 42.1
+SMBJ28 MF MF 31.1 38.0 1.0 28 1.0 12.0 50.0
+SMBJ28A MG MG 31.1 34.4 1.0 28 1.0 13.2 45.4
+SMBJ30 MH CH 33.3 40.7 1.0 30 1.0 11.2 53.5
+SMBJ30A MK CK 33.3 36.8 1.0 30 1.0 12.4 48.4
Notes: (1) Pulse test: tp 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMBG/SMBJ5.0CA, the maximum V(BR) is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
Document Number 88392 www.vishay.com
26-Sep-02 3
SMBJ5.0 thru 188CA
Vishay Semiconductors
for merly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 50A (uni-directional only)
Device Breakdown Voltage Maximum Maximum Maximum
Device Type Marking V(BR) at IT(1) Test Stand-off Reverse Leakage Peak Pulse Surge Clamping
Modified Code (V) Current Voltage at VWM Current IPPM Voltage at IPPM
“J” Bend Lead UNI BI Min Max IT(mA) VWM (V) ID (µA) (3) (A)(2) VC(V)
+SMBJ33 ML CL 36.7 44.9 1.0 33 1.0 10.2 59.0
+SMBJ33A MM CM 36.7 40.6 1.0 33 1.0 11.3 53.3
+SMBJ36 MN CN 40.0 48.9 1.0 36 1.0 9.3 64.3
+SMBJ36A MP CP 40.0 44.2 1.0 36 1.0 10.3 58.1
+SMBJ40 MQ CQ 44.4 54.3 1.0 40 1.0 8.4 71.4
+SMBJ40A MR CR 44.4 49.1 1.0 40 1.0 9.3 64.5
+SMBJ43 MS CS 47.8 58.4 1.0 43 1.0 7.8 76.7
+SMBJ43A MT CT 47.8 52.8 1.0 43 1.0 8.6 69.4
+SMBJ45 MU MU 50.0 61.1 1.0 45 1.0 7.5 80.3
+SMBJ45A MV MV 50.0 55.3 1.0 45 1.0 8.3 72.7
+SMBJ48 MW MW 53.3 65.1 1.0 48 1.0 7.0 85.5
+SMBJ48A MX MX 53.3 58.9 1.0 48 1.0 7.8 77.4
+SMBJ51 MY MY 56.7 69.3 1.0 51 1.0 6.6 91.1
+SMBJ51A MZ MZ 56.7 62.7 1.0 51 1.0 7.3 82.4
+SMBJ54 ND ND 60.0 73.3 1.0 54 1.0 6.2 96.3
+SMBJ54A NE NE 60.0 66.3 1.0 54 1.0 6.9 87.1
+SMBJ58 NF NF 64.4 78.7 1.0 58 1.0 5.8 103
+SMBJ58A NG NG 64.4 71.2 1.0 58 1.0 6.4 93.6
+SMBJ60 NH NH 66.7 81.5 1.0 60 1.0 5.6 107
+SMBJ60A NK NK 66.7 73.7 1.0 60 1.0 6.2 96.8
+SMBJ64 NL NL 71.1 86.9 1.0 64 1.0 5.3 114
+SMBJ64A NM NM 71.1 78.6 1.0 64 1.0 5.8 103
+SMBJ70 NN NN 77.8 95.1 1.0 70 1.0 4.8 125
+SMBJ70A NP NP 77.8 86.0 1.0 70 1.0 5.3 113
+SMBJ75 NQ NQ 83.3 102 1.0 75 1.0 4.5 134
+SMBJ75A NR NR 83.3 92.1 1.0 75 1.0 5.0 121
+SMBJ78 NS NS 86.7 106 1.0 78 1.0 4.3 139
+SMBJ78A NT NT 86.7 95.8 1.0 78 1.0 4.8 126
+SMBJ85 NU NU 94.4 115 1.0 85 1.0 4.0 151
+SMBJ85A NV NV 94.4 104 1.0 85 1.0 4.4 137
+SMBJ90 NW NW 100 122 1.0 90 1.0 3.8 160
+SMBJ90A NX NX 100 111 1.0 90 1.0 4.1 146
+SMBJ100 NY NY 111 136 1.0 100 1.0 3.4 179
+SMBJ100A NZ NZ 111 123 1.0 100 1.0 3.7 162
+SMBJ110 PD PD 122 149 1.0 110 1.0 3.1 196
+SMBJ110A PE PE 122 135 1.0 110 1.0 3.4 177
+SMBJ120 PF PF 133 163 1.0 120 1.0 2.8 214
+SMBJ120A PG PG 133 147 1.0 120 1.0 3.1 193
+SMBJ130 PH PH 144 176 1.0 130 1.0 2.6 231
+SMBJ130A PK PK 144 159 1.0 130 1.0 2.9 209
+SMBJ150 PL PL 167 204 1.0 150 1.0 2.2 268
+SMBJ150A PM PM 167 185 1.0 150 1.0 2.5 243
+SMBJ160 PN PN 178 218 1.0 160 1.0 2.1 287
+SMBJ160A PP PP 178 197 1.0 160 1.0 2.3 259
+SMBJ170 PQ PQ 189 231 1.0 170 1.0 2.0 304
+SMBJ170A PR PR 189 209 1.0 170 1.0 2.2 275
SMBJ188 PT PT 209 255 1.0 188 1.0 1.7 344
SMBJ188A PS PS 209 231 1.0 188 1.0 2.0 328
Notes: (1) Pulse test: tp 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
SMBJ5.0 thru 188CA
Vishay Semiconductors
for merly General Semiconductor
Ratings and
Characteristic Curves(TA= 25°C unless otherwise noted)
0
25
50
75
100
07525 50 100 125 150 175 200
Peak Pulse Power (PPP) or Current (IPP)
Derating in Percentage, %
TA Ambient Temperature (°C)
Fig. 2 Pulse Derating Curve
PPPM Peak Pulse Power (kW)
Fig. 1 P eak Pulse P o wer Rating Curve
0.1
1
10
100
0.1µs 1.0µs10µs
td Pulse Width (sec.)
100µs 1.0ms 10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
IFSM Peak Forward Surge Current (A)
tp Pulse Duration (sec)
Transient Thermal Impedance (°C/W)
Fig. 5 Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001 0.01 0.1 1 10 100 1000
0
50
100
150
IPPM Peak Pulse Current, % IRSM
Fig. 3 Pulse Wa veform
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10µsec.
Peak Value
IPPM
Half Value IPP
IPPM 2
td
10/1000µsec. Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t Time (ms)
CJ Junction Capacitance (pF)
Fig. 4 Typical Junction Capacitance
10
100
1,000
6,000
101 100 200
VWM Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
www.vishay.com Document Number 88392
426-Sep-02