BZX284-B2V4T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 19 2002 May 28

DISCRETE SEMICONDUCTORS

BZX284 series

Voltage regulator diodes

ook, halfpage

M3D154

2002 May 28 2

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX284 series

FEATURES

•Total power dissipation:

max. 400 mW

•Two tolerance series:

±2% and ±5%

•Working voltage range:

nom. 2.4 to 75 V (E24 range).

APPLICATIONS

•General regulation functions.

DESCRIPTION

Low-power voltage regulator diodes in a SOD110 very small ceramic SMD

package. The diodes are available in the normalized E24 ±2% (BZX284-B) and

±5% (BZX284-C) tolerance range. The series consists of 37 types with nominal

working voltages from 2.4 to 75 V.

handbook, 4 columns

MAM219

cathode mark

top viewside viewbottom view

Fig.1 Simplified outline (SOD110) and symbol.

MARKING

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

BZX284-B2V4 WO BZX284-B15 XH BZX284-C2V4 YO BZX284-C15 ZH

BZX284-B2V7 WP BZX284-B16 XI BZX284-C2V7 YP BZX284-C16 ZI

BZX284-B3V0 WQ BZX284-B18 XJ BZX284-C3V0 YQ BZX284-C18 ZJ

BZX284-B3V3 WR BZX284-B20 XK BZX284-C3V3 YR BZX284-C20 ZK

BZX284-B3V6 WS BZX284-B22 XL BZX284-C3V6 YS BZX284-C22 ZL

BZX284-B3V9 WT BZX284-B24 XM BZX284-C3V9 YT BZX284-C24 ZM

BZX284-B4V3 WU BZX284-B27 XN BZX284-C4V3 YU BZX284-C27 ZN

BZX284-B4V7 WV BZX284-B30 XO BZX284-C4V7 YV BZX284-C30 ZO

BZX284-B5V1 WW BZX284-B33 XP BZX284-C5V1 YW BZX284-C33 ZP

BZX284-B5V6 WX BZX284-B36 XQ BZX284-C5V6 YX BZX284-C36 ZQ

BZX284-B6V2 WY BZX284-B39 XR BZX284-C6V2 YY BZX284-C39 ZR

BZX284-B6V8 WZ BZX284-B43 XS BZX284-C6V8 YZ BZX284-C43 ZS

BZX284-B7V5 XA BZX284-B47 XT BZX284-C7V5 ZA BZX284-C47 ZT

BZX284-B8V2 XB BZX284-B51 XU BZX284-C8V2 ZB BZX284-C51 ZU

BZX284-B9V1 XC BZX284-B56 XV BZX284-C9V1 ZC BZX284-C56 ZV

BZX284-B10 XD BZX284-B62 XW BZX284-C10 ZD BZX284-C62 ZW

BZX284-B11 XE BZX284-B68 XX BZX284-C11 ZE BZX284-C68 ZX

BZX284-B12 XF BZX284-B75 XY BZX284-C12 ZF BZX284-C75 ZY

BZX284-B13 XG − − BZX284-C13 ZG − −

2002 May 28 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX284 series

LIMITING VALUES

In accordance wi th the Absolute Maxi mum Rating System (IEC 60134).

Note

1. Device mounted on a pr inted-circuit board: 11 × 25 × 1.6 mm.

ELECTRICAL CHARACTERISTIC S

Total BZX284-B and BZX284-C series

Tj = 25 °C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −250 mA

IZSM non-repetitive peak reverse current tp = 100 μs; square wave;

Tamb = 25 °C prior to surge see Tables 1 and 2

Ptot total power dissipation Tamb = 25 °C; note 1 −400 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.2 0.9 V

IF = 100 mA; see Fig.2 1.1 V

IRreverse current

BZX284-B/C2V4 VR = 1 V 50 μA

BZX284-B/C2V7 VR = 1 V 20 μA

BZX284-B/C3V0 VR = 1 V 10 μA

BZX284-B/C3V3 VR = 1 V 5 μA

BZX284-B/C3V6 VR = 1 V 5 μA

BZX284-B/C3V9 VR = 1 V 3 μA

BZX284-B/C4V3 VR = 1 V 3 μA

BZX284-B/C4V7 VR = 2 V 3 μA

BZX284-B/C5V1 VR = 2 V 2 μA

BZX284-B/C5V6 VR = 2 V 1 μA

BZX284-B/C6V2 VR = 4 V 3 μA

BZX284-B/C6V8 VR = 4 V 2 μA

BZX284-B/C7V5 VR = 5 V 1 μA

BZX284-B/C8V2 VR = 5 V 700 nA

BZX284-B/C9V1 VR = 6 V 500 nA

BZX284-B/C10 VR = 7 V 200 nA

BZX284-B/C11 VR = 8 V 100 nA

BZX284-B/C12 VR = 8 V 100 nA

BZX284-B/C13 VR = 8 V 100 nA

BZX284-B/C15 to 75 VR = 0.7VZnom 50 nA

2002 May 28 4

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX284 series

Table 1 Per type BZX284-B/C2V4 to B/C24

Tj = 25 °C unless otherwise specified.

BZX284-

Bxxx

Cxxx

WORKI NG VO LTAG E

VZ (V)

at IZtest = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 5 mA

(see Figs 3 and 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

Tol. ±2% (B) Tol. ±5% (C) at IZtest = 1 mA at IZtest = 5 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2V4 2.35 2.45 2.2 2.6 275 400 70 100 −1.6 450 12.0

2V7 2.65 2.75 2.5 2.9 300 450 75 100 −2.0 440 12.0

3V0 2.94 3.06 2.8 3.2 325 500 80 95 −2.1 425 12.0

3V3 3.23 3.37 3.1 3.5 350 500 85 95 −2.4 410 12.0

3V6 3.53 3.67 3.4 3.8 375 500 85 90 −2.4 390 12.0

3V9 3.82 3.98 3.7 4.1 400 500 85 90 −2.5 370 12.0

4V3 4.21 4.39 4.0 4.6 410 600 80 90 −2.5 350 12.0

4V7 4.61 4.79 4.4 5.0 425 500 50 80 −1.4 325 12.0

5V1 5.00 5.20 4.8 5.4 400 480 40 60 −0.8 300 12.0

5V6 5.49 5.71 5.2 6.0 80 400 15 40 1.2 275 12.0

6V2 6.08 6.32 5.8 6.6 40 150 610 2.3 250 12.0

6V8 6.66 6.94 6.4 7.2 30 80 615 3.0 215 12.0

7V5 7.35 7.65 7.0 7.9 15 80 210 4.0 170 4.0

8V2 8.04 8.36 7.7 8.7 20 80 210 4.6 150 4.0

9V1 8.92 9.28 8.5 9.6 20 100 210 5.5 120 3.0

10 9.80 10.20 9.4 10.6 20 150 210 6.4 110 3.0

11 10.80 11.20 10.4 11.6 25 150 210 7.4 108 2.5

12 11.80 12.20 11.4 12.7 25 150 210 8.4 105 2.5

13 12.70 13.30 12.4 14.1 25 170 210 9.4 103 2.5

15 14.70 15.30 13.8 15.6 25 200 315 11.4 99 2.0

16 15.70 16.30 15.3 17.1 25 200 420 12.4 97 1.5

18 17.60 18.40 16.8 19.1 25 225 420 14.4 93 1.5

20 19.60 20.40 18.8 21.2 30 225 420 16.4 88 1.5

22 21.60 22.40 20.8 23.3 30 250 525 18.4 84 1.25

24 23.50 24.50 22.8 25.6 30 250 630 20.4 80 1.25

2002 May 28 5

NXP Semiconductors Product data sheet

Voltage regulator diodes BZX284 series

Table 2 Per type BZX284-B/C27 to B/C75

Tj = 25 °C unless otherwise specified.

BZX284-

Bxxx

Cxxx

WORKI NG VO LTAG E

VZ (V)

at IZtest = 2 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)TEMP. COEFF.

SZ (mV/K)

at IZtest = 2 mA

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

Tol. ±2% (B) Tol. ±5% (C) at IZtest = 0.5 mA at IZtest = 2 mA

MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

27 26.50 27.50 25.1 28.9 35 250 840 23.4 73 1.0

30 29.40 30.60 28.0 32.0 35 250 10 40 26.6 66 1.0

33 32.30 33.70 31.0 35.0 40 275 11 40 29.7 60 0.9

36 35.30 36.70 34.0 38.0 40 300 15 60 33.0 59 0.8

39 38.20 39.80 37.0 41.0 40 300 25 75 36.4 58 0.7

43 42.10 43.90 40.0 46.0 45 325 30 80 41.2 56 0.6

47 46.10 47.90 44.0 50.0 45 325 30 90 46.1 55 0.5

51 50.00 52.00 48.0 54.0 45 350 35 110 51.0 52 0.4

56 54.90 57.10 52.0 60.0 50 375 40 120 57.0 49 0.3

62 60.80 63.20 58.0 66.0 60 400 50 140 64.4 44 0.3

68 66.60 69.40 64.0 72.0 75 400 55 160 71.7 40 0.25

75 73.50 76.50 70.0 79.0 85 400 70 175 80.2 35 0.2

2002 May 28 6

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX284 series

THERMAL CHARACTE RISTICS

Note

1. Device mounted on a pr inted-circuit board: 11 × 25 × 1.6 mm.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 315 K/W

GRAPHICAL DATA

Fig.2 Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6 1

300

100

200

MBG781

0.8 VF (V)

(mA)

Tj = 25 °C.

Fig.3 Temperature coefficient as a funct ion of

working current; typical values.

BZX284-B/C2V4 to B/C4V3.

Tj = 25 to 150 °C.

handbook, halfpage

060

−2

−3

−1

MBG783

20 40 IZ (mA)

(mV/K) 4V3

3V9

3V6

3V0

2V4

2V7

3V3

2002 May 28 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX284 series

Fig.4 Temperature coefficient as a funct ion of

working current; typical values.

BZX284-B/C4V7 to B/C12.

Tj = 25 to 150 °C.

handbook, halfpage

02016

−5

MBG782

4812 IZ (mA)

(mV/K)

4V7

9V1

8V2

7V5

6V8 6V2

5V6

5V1

2002 May 28 8

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX284 series

PACKAGE OUTLINE

UNIT A

max.

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.6

2.10

1.90

0.1

1.40

1.10

DIMENSIONS (mm are the original dimensions)

SOD110 97-04-14

Very small ceramic rectangular surface mounted package SOD110

cathode

identifier

0 0.5 1 mm

scale

2002 May 28 9

NXP Semiconductors Pr oduct data sheet

Voltage regulator diodes BZX284 series

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

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Printed in The Netherlands 613514/04/pp10 Date of release: 2002 May 28 Document orde r number: 9397 750 09734