Preliminary Technical Information IXFR32N100Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS(on) trr (Electrically Isolated Tab) = = 1000V 23A 350m 300ns N-Channel Enhancement Mode Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 23 A IDM TC = 25C, Pulse Width Limited by TJM 96 A IA EAS TC = 25C TC = 25C 32 2 A J dv/dt IS IDM, VDD VDSS, TJ 150C 50 V/ns PD TC = 25C 570 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 V 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, 1 Minute FC Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface Low Intrinsic Gate Resistance 2500V~ Electrical Isolation Fast Intrinsic Rectifier Avalanche Rated Low Package Inductance Advantages z z z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) Characteristic Values Min. Typ. Max. 1000 3.5 V 6.5 V 200 nA TJ = 125C VGS = 10V, ID = 16A, Note 1 (c) 2012 IXYS CORPORATION, All Rights Reserved 50 A 2 mA High Power Density Easy to Mount Space Savings Applications z z z z z DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies DC Choppers Temperature and Lighting Controls 350 m DS100366A(10/12) IXFR32N100Q3 Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 16A, Note 1 20 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 32 S 10.9 nF 745 pF 67 pF 0.20 45 ns 15 ns 54 ns 12 ns 195 nC Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf VGS = 10V, VDS = 0.5 * VDSS, ID = 16A RG = 1 (External) Qg(on) Qgs ISOPLUS247 (IXFR) Outline VGS = 10V, VDS = 0.5 * VDSS, ID = 16A Qgd 60 nC 78 nC 1 = Gate 2,4 = Drain 3 = Source 0.22 C/W RthJC RthCS 0.15 C/W Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.4 V IF = 16A, -di/dt = 100A/s 1.2 12.3 VR = 100V, VGS = 0V 300 ns C A 1. Pulse test, t 300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR32N100Q3 Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 32 70 VGS = 10V 28 24 8V 50 20 ID - Amperes ID - Amperes VGS = 10V 60 16 7V 12 8V 40 30 7V 20 8 4 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 11 5 10 15 32 30 3.4 VGS = 10V 28 VGS = 10V 3.0 R DS(on) - Normalized 24 7V ID - Amperes 25 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125C 20 16 12 6V 8 2.6 I D = 32A 2.2 I D = 16A 1.8 1.4 1.0 4 0.6 5V 0 0.2 0 5 10 15 20 25 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 24 2.8 VGS = 10V 2.6 20 TJ = 125C 2.4 2.2 16 ID - Amperes R DS(on) - Normalized 20 VDS - Volts VDS - Volts 2.0 1.8 1.6 8 TJ = 25C 1.4 12 1.2 4 1.0 0.8 0 0 10 20 30 40 ID - Amperes (c) 2012 IXYS CORPORATION, All Rights Reserved 50 60 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR32N100Q3 Fig. 7. Input Admittance Fig. 8. Transconductance 50 TJ = - 40C 50 45 40 TJ = 125C 25C - 40C 30 40 g f s - Siemens ID - Amperes 35 25 20 25C 30 125C 20 15 10 10 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 5 10 15 20 25 VGS - Volts 30 35 40 45 50 55 60 200 220 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 100 10 90 9 VDS = 500V 80 8 I G = 10mA 70 7 VGS - Volts IS - Amperes I D = 16A 60 50 40 6 5 4 TJ = 125C 30 3 TJ = 25C 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 VSD - Volts 100 120 140 160 180 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 100,000 RDS(on) Limit f = 1 MHz 10,000 10 ID - Amperes Capacitance - PicoFarads 100s Ciss Coss 1,000 1 100 TJ = 150C TC = 25C Single Pulse Crss 1ms 10 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFR32N100Q3 Fig. 13. Maximum Transient Thermal Impedance 1 Z(th)JC - C / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8-R44) 10-10-12 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.