© 2012 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 1000 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 23 A
IDM TC= 25°C, Pulse Width Limited by TJM 96 A
IATC= 25°C 32A
EAS TC= 25°C2J
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
PDTC= 25°C 570 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
VISOL 50/60 Hz, 1 Minute 2500 V
FCMounting Force 20..120/4.5..27 N/lb.
Weight 5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1000 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 16A, Note 1 350 mΩ
HiperFETTM
Power MOSFET
Q3-Class
IXFR32N100Q3 VDSS = 1000V
ID25 = 23A
RDS(on)
350mΩΩ
ΩΩ
Ω
trr
300ns
DS100366A(10/12)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
zIsolated Mounting Surface
zLow Intrinsic Gate Resistance
z2500V~ Electrical Isolation
zFast Intrinsic Rectifier
zAvalanche Rated
zLow Package Inductance
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
(Electrically Isolated Tab)
G = Gate D = Drain
S = Source
ISOPLUS247
E153432
G
S
DIsolated Tab
Preliminary Technical Information
IXFR32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 16A, Note 1 20 32 S
Ciss 10.9 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 745 pF
Crss 67 pF
RGi Gate Input Resistance 0.20 Ω
td(on) 45 ns
tr 15 ns
td(off) 54 ns
tf 12 ns
Qg(on) 195 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 16A 60 nC
Qgd 78 nC
RthJC 0.22 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 32 A
ISM Repetitive, Pulse Width Limited by TJM 128 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 300 ns
QRM 1.2 μC
IRM 12.3 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300μs, duty cycle, d 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 16A
RG = 1Ω (External)
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
1 = Gate
2,4 = Drain
3 = Source
ISOPLUS247 (IXFR) Outline
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2012 IXYS CORPORATION, All Rights Reserved
IXFR32N100Q3
Fi g. 1. Ou tp ut C har act er i sti cs @ T
J
= 25ºC
0
4
8
12
16
20
24
28
32
01234567891011
V
DS
- Volts
I
D
- Ampere s
V
GS
= 10V
6
V
7
V
8
V
Fi g. 2. Exte n d ed Ou t p u t Ch ar acter isti cs @ T
J
= 25ºC
0
10
20
30
40
50
60
70
0 5 10 15 20 25 30
V
DS
- Vo lts
I
D
- Amperes
V
GS
= 10V
7
V
6
V
8
V
Fi g . 3. Ou tpu t C har acter isti cs @ T
J
= 125º C
0
4
8
12
16
20
24
28
32
0 5 10 15 20 25
V
DS
- Volts
I
D
- A mperes
6
V
7V
5V
V
GS
= 10V
Fig. 4. R
DS(on)
No r mali zed to I
D
= 16A Valu e vs.
Junction T emp erature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normali zed
V
GS
= 10V
I
D
= 32A
I
D
= 16A
Fig. 5. R
DS(on)
Normalized to I
D
= 16A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
0102030405060
I
D
- Amp e res
R
DS(on)
- Normali zed
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximu m Dr ai n Cu r r en t vs.
Ca se Temper a tu r e
0
4
8
12
16
20
24
-50 -25 0 25 50 75 100 125 150
T
C
- Deg ree s Cen tig rade
I
D
- Am peres
IXFR32N100Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
2C
- 4C
Fig . 8. Tra n sc o ndu ctance
0
10
20
30
40
50
0 5 10 15 20 25 30 35 40 45 50 55 60
I
D
- A mp e re s
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
90
100
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 2C
Fig . 10. Gate Ch ar g e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200 220
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 16A
I
G
= 10mA
Fig. 11. Capaci tance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000 10,000
V
DS
- Vo lt s
I
D
- Am pe re s
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: F_32N100Q3(Q8-R44) 10-10-12
IXFR32N100Q3
Fi g . 13. Maximum Tran si en t Th er mal Imp ed an ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- º C / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.