MMBTA06WT1 Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model - 4 kV ESD Rating: Machine Model - 400 V http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage VCBO 80 Vdc Emitter-Base Voltage VEBO 4.0 Vdc IC 500 mAdc Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 1 2 SC-70 CASE 419 STYLE 3 C MARKING DIAGRAM GM D GM = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBTA06WT1 Semiconductor Components Industries, LLC, 2002 April, 2002 - Rev. 0 1 Package Shipping SC-70 3000/Tape & Reel Publication Order Number: MMBTA06WT1/D MMBTA06WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 - Vdc Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) V(BR)EBO 4.0 - Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES - 0.1 Adc Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO - 0.1 100 100 - - OFF CHARACTERISTICS Adc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) VCE(sat) - 0.25 Vdc Base-Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) VBE(on) - 1.2 Vdc fT 100 - MHz SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (Note 2) (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. TURN-ON TIME VCC -1.0 V 5.0 s 100 +10 V 0 Vin tr = 3.0 ns TURN-OFF TIME RL 100 OUTPUT Vin RB * CS 6.0 pF 5.0 F VCC +VBB +40 V tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 OUTPUT * CS 6.0 pF 100 5.0 s RL RB 5.0 F 100 +40 V 300 VCE = 2.0 V TJ = 25C 40 100 70 50 Cibo 20 10 8.0 Cobo 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 4.0 0.1 200 10 10 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 300 TA = 25C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 2.0 TJ = 125C VCE = 1.0 V -55C 100 80 50 30 50 70 100 100 VBE(on) @ VCE = 1.0 V 0.4 0 0.5 200 300 500 VBE(sat) @ IC/IB = 10 0.6 0.2 60 20 30 20 TJ = 25C 0.8 V, VOLTAGE (VOLTS) 25C 10 5.0 7.0 10 Figure 5. Active-Region Safe Operating Area 1.0 2.0 3.0 5.0 3.0 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 400 1.0 1.0 s TC = 25C 200 Figure 4. Switching Time 200 100 100 s 10 1.0 500 50 1.0 ms IC, COLLECTOR CURRENT (mA) h FE , DC CURRENT GAIN 5.0 1.0 k 700 500 tf 40 0.5 2.0 Figure 3. Capacitance 200 30 1.0 Figure 2. Current-Gain -- Bandwidth Product ts 20 0.5 VR, REVERSE VOLTAGE (VOLTS) 300 100 70 50 0.2 IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 t, TIME (ns) TJ = 25C 60 C, CAPACITANCE (pF) 200 80 I C , COLLECTOR CURRENT (mA) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) MMBTA06WT1 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. "ON" Voltages http://onsemi.com 3 200 500 1.0 -0.8 R VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) MMBTA06WT1 TJ = 25C 0.8 0.6 IC = 250 mA IC = 100 mA IC = 50 mA -1.2 IC = 500 mA -1.6 0.2 0 RVB for VBE -2.0 0.4 IC = 10 mA 0.05 0.1 -2.4 0.2 0.5 1.0 2.0 5.0 10 20 -2.8 0.5 50 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base-Emitter Temperature Coefficient http://onsemi.com 4 500 MMBTA06WT1 INFORMATION FOR USING THE SC-70/SOT-323 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SC-70/SOT-323 POWER DISSIPATION The power dissipation of the SC-70/SOT-323 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows. PD = into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values SOLDERING PRECAUTIONS * The soldering temperature and time should not The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 MMBTA06WT1 PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H http://onsemi.com 6 DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 MMBTA06WT1 Notes http://onsemi.com 7 MMBTA06WT1 ON Semiconductor is a trademark and is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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