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SEMICONDUCTOR
TECHNICAL DATA
Revision No : 11
7 CIRCUIT DARLINGTON TRANSISTOR ARRAY
FEATURES
·Output Current : 500mA Max.
·High Sustaining Voltage Outputs : 50V Min.
·Output Clamp Diodes.
·Inputs Compatible With Various Types of Logic.
·PKG Type AP : DIP-16Pin, DIP-16Pin(1) AF : FLP-16Pin
DESCRIPTION:
The KID65001AP/AF Series are high-voltage, high-current
darlington transistor array comprised of seven NPN darlington pairs.
All units feature internal clamp diodes for switching inductive loads.
MAXIMUM RATINGS (Ta=25℃, unless otherwise noted)
KID65001AP/AF~
KID65004AP/AF
BIPOLAR LINEAR INTEGRATED CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Output Sustaining Voltage VCE(SUS) 50 V
Output Current IOUT 500 mA/ch
Input Voltage IIN 1) -0.5～+30 V
Input Current IIN 2) 25 mA
Clamp
Diode
Reverse Voltage VR50 V
Forward Current IF500 mA
GND Terminal Current IGND 2.8 A
Power Dissipation
AP PD
1.47 W
AF 0.54 / 0.63 3)/1.25 4) W
Operating Temperature Topr -40～85 ℃
Storage Temperature Tstg -55～150 ℃
TYPE INPUT RESISTOR DESIGNATION
KID65001AP/AF No (External) General Purpose
KID65002AP/AF Zener Diode
7V+10.5kΩ14～25V P-MOS
KID65003AP/AF 2.7kΩTTL, 5V C-MOS
KID65004AP/AF 10.5kΩ6～15V P-MOS, C-MOS
1) Except KID65001AP/AF
2) Only KID65001AP/AF
3) On PCB(30×30×1.6mm, Cu 50%)
4) On PCB (Test Board : JEDEC 2s2p)
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KID65001AP/AF~KID65004AP/AF
Revision No : 11
2012. 1. 9 3/7
KID65001AP/AF~KID65004AP/AF
Revision No : 11
RECOMMENDED OPERATING CONDITIONS (Ta=-40～85℃)
CHARACTERISTIC SYMBOL CONDITION MIN. TYP. MAX. UNIT
Output Sustaining Voltage VCE(SUS) 0 - 50 V
Output Current
IOUT
(AP, Ta=85℃)
TPW=25ms, DF=10%, 7 Circuits 0 - 370 mA
TPW=25ms, DF=30%, 7 Circuits 0 - 200
IOUT
(AF, Ta=85℃)
TPW=25ms, DF=10%, 7 Circuits - - 290 mA
TPW=25ms, DF=30%, 7 Circuits - - 150
Input Voltage VIN Except KID65001AP/AF 0 - 30 V
Input Current IIN Only KID65001AP/AF 0 - 5 mA
Clamp Diode Reverse Voltage VR- - 50 V
Clamp Diode Forward Current IF- - 400 mA
Power Dissipation AP PD
Ta=85℃- - 0.76 W
AF Ta=85℃0.28 / 0.32* / 0.65**
* On PCB (30×30×1.6mm, Cu 50%)
** On PCB (Test Board : JEDEC 2s2p)
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise noted)
CHARACTERISTICS SYMBOL TEST
CIRCUIT TEST CONDITION MIN. TYP. MAX. UNIT
Output Leak
Current ICEX 1
VCE=50V, Ta=25℃- - 50
μA
VCE=50V, Ta=85℃- - 100
KID65002AP/AF VCE=50V, VIN=6V - - 500
KID65004AP/AF VCE=50V, VIN=1V - - 500
Collector-Emitter Saturation Voltage VCE(sat) 2
IOUT=350mA, IIN=500μA- 1.3 1.6
V
IOUT=200mA, IIN=350μA- 1.1 1.3
IOUT=100mA, IIN=250μA - 0.9 1.1
Input Current
KID65002AP/AF
IIN(ON) 3
VIN=17V - 0.82 1.25
mA
KID65003AP/AF VIN=3.85V - 0.93 1.35
KID65004AP/AF VIN=5V - 0.35 0.5
VIN=12V - 1.0 1.45
IIN(OFF) 4IOUT=500μA, Ta=85℃50 65 - μA
Input Voltage
KID65002AP/AF
VIN(ON)
5
VCE=2V, IOUT=300mA - - 13
V
KID65003AP/AF
VCE=2V, IOUT=200mA - - 2.4
VCE=2V, IOUT=250mA - - 2.7
VCE=2V, IOUT=300mA - - 3.0
KID65004AP/AF
VCE=2V, IOUT=125mA - - 5.0
VCE=2V, IOUT=200mA - - 6.0
VCE=2V, IOUT=275mA - - 7.0
VCE=2V, IOUT=350mA - - 8.0
KID65002AP/AF
VIN(OFF)
- 0 - 7.4
KID65003AP/AF - 0 - 0.7
KID65004AP/AF - 0 - 1.0
DC Current Transfer Ratio hFE 2VCE=2V, IOUT=350mA 1000 - -
Clamp Diode Reverse Current IR6VR=50V, Ta=25℃- - 50 μA
VR=50V, Ta=85℃- - 100
Clamp Diode Forward Voltage VF7IF=350mA - - 2.0 V
Input Capacitance CIN - 15 - pF
Turn-ON Delay tON 8VOUT=50V, RL=163Ω- 0.1 - μs
Turn-OFF Delay tOFF - 0.2 -
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KID65001AP/AF~KID65004AP/AF
Revision No : 11
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KID65001AP/AF~KID65004AP/AF
Revision No : 11
Notes : 1. Pulse Width 50μs, Duty Cycle 10%
Output Impedance 50Ω, tr≦5ns, tf≦10ns
2. See below
Input Conditions
3. CL includes probe and Jig capacitance.
Type Number RIVIH
KID65001AP/AF 2.7kΩ3V
KID65002AP/AF 013V
KID65003AP/AF 03V
KID65004AP/AF 08V
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KID65001AP/AF~KID65004AP/AF
Revision No : 11
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KID65001AP/AF~KID65004AP/AF
Revision No : 11
