Absolute Maximum Ratings Values Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Units RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400 1140 / 800 20 2500 -40 ... +150 (125) 2500 Class F 40/125/56 V V A A V W C V 390 / 260 1140 / 800 2900 42 000 A A A A2s SEMITRANS(R) M Low Loss IGBT Modules SKM 400 GB 124 D SKM 400 GAL 124D 6) SKM 400 GAR 124D 6) Inverse Diode; Free-wheeling Diode FWD IF = -IC IFM = -ICM IFSM I 2t Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C SEMITRANS 3 Characteristics Symbol Conditions 1) V(BR)CES VGE(th) ICES IGES VCEsat VCEsat gfs CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VGE = 0, IC = 4 mA VGE = VCE, IC = 12 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 300 A VGE = 15 V; IC = 400 A Tj = 25 (125) C VCE = 20 V, IC = 300 A per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V3) IC = 300 A, ind. load RGon = RGoff = 5 Tj = 125 C 6) min. typ. max. Units 4,5 - - - - - 110 - 5,5 8 24 - 2,1(2,4) 2,5(3,0) - - 6,5 14 - 0,35 2,45(2,85) - - V V mA mA A V V S - - - - - - 22 3,3 1,2 - 700 30 4 1,6 20 pF nF nF nF nH - - - - - - 85 65 680 56 36 42 - - - - - - ns ns ns ns mWs mWs - - - - - - 2,0(1,8) 2,25(2,05) 1,1 - 136 36 2,5 - 1,2 3,5 - - V V V m A C - - - - - - 0,05 0,125 0,038 C/W C/W C/W VCES Inverse Diode and FWD of types "GAL", GAR" 8) VF = VEC VF = VEC VTO rt IRRM Qrr IF = 300 A VGE = 0 V; IF = 400 A Tj = 25 (125) C Tj = 125 C 2) Tj = 125 C 2) IF = 300 A; Tj = 125 C2) IF = 300 A; Tj = 125 C2) Thermal characteristics Rthjc Rthjc Rthch per IGBT per diode per module 6) GB GAL GAR Features * MOS input (voltage controlled) * N channel, homogeneous Silicon structure (NPT-Non punch through-IGBT) * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould * Large clearance (12 mm) and creepage distances (20 mm) Typical Applications B 6 - 205 * Switching (not for linear use) * Inverter drives * UPS 1) 2) 3) 6) 8) Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 2000 A/s, VGE = 0 V Use VGEoff = -5... -15 V The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM 400 GB 124 D CAL = Controlled Axial Lifetime Technology. Cases and mech. data B 6 - 206 (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 201 SKM 400 GB 124 D... M400G124.X LS-1 3000 M400G124.X LS -2 120 Tj = 125 C VCE = 600 V VGE = + 15 V RG = 5 mWs W 2500 100 E on 2000 80 E off 1500 60 1000 40 500 20 E P tot 0 0 0 20 40 60 80 100 120 TC 140 160 C 0 200 400 Fig. 1 Rated power dissipation Ptot = f (TC) 800 A Fig. 2 Turn-on /-off energy = f (IC) M400G124.X LS -4 M400G124.X LS-3 200 Tj = 125 C VCE = 600 V VGE = + 15 V IC = 300 A mWs E on 160 600 IC 10000 A tp=16s 1000 1 pulse TC = 25 C Tj 150 C 100s 120 100 1ms E off 80 10 10ms Not for linear use (DC) 40 1 IC E 0 0,1 0 RG 10 20 30 40 1 Fig. 3 Turn-on /-off energy = f (RG) 100 1000 10000 V Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) M400G124.X LS -5 2,5 10 V CE 2 Tj 150 C 12 VGE = 15 V RGoff = 5 IC = 300 A 10 M400G124.X LS -6 di/dt=1000 A/s 3000 A/s 5000 A/s 8 1,5 Tj 150 C VGE = 15 V tsc 10 s L < 25 nH ICN = 300 A 6 4 allowed numbers of short circuits: <1000 2 time between short circuits: >1s 1 0,5 ICpuls/IC ICSC/IC 0 0 0 200 V CE 400 600 800 Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 202 0 1000 1200 1400 V 200 V CE 400 600 800 1000 1200 1400 V Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 http://store.iiic.cc/ (c) by SEMIKRON M400G124.X LS -8 600 Tj = 150 C VGE 15V A 500 400 300 200 100 IC 0 0 20 40 60 80 100 120 140 TC 160 C Fig. 8 Rated current vs. temperature I C = f (TC) M400G124.X LS -9 600 M400G124.X LS-10 600 A A 17V 15V 13V 11V 9V 7V 500 400 500 17V 15V 13V 11V 9V 7V 400 300 300 200 200 100 100 IC IC 0 0 0 1 2 3 4 0 5 Fig. 9 Typ. output characteristic, tp = 80 s; 25 C 1 2 3 4 V CE V V CE 5 V Fig. 10 Typ. output characteristic, tp = 80 s; 125 C M400G124.X LS-12 600 Pcond(t) = VCEsat(t) * IC(t) A 500 VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) 400 VCE(TO)(Tj) 1,3 + 0,0005 (Tj -25) [V] 300 typ.: rCE(Tj) = 0,0027 + 0,000008 (Tj -25) [] 200 max.: rCE(Tj) = 0,0038 + 0,000012 (Tj -25) [] +2 valid for VGE = + 15 -1 100 IC [V]; IC > 0,3 ICnom 0 0 2 V GE Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON 4 6 8 10 12 V 14 Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 0898 http://store.iiic.cc/ B 6 - 203 SKM 400 GB 124 D... M400G124.X LS-13 20 V M400G124.X LS -14 100 ICpuls = 300 A 18 VGE = 0 V f = 1 MHz nF Cies 16 600V 14 10 800V 12 Coes 10 8 1 6 Cres 4 C V GE 2 0 0,1 0 QGate 500 1000 1500 2000 nC 0 10 20 V CE Fig. 13 Typ. gate charge characteristic Fig. 14 Typ. capacitances vs.VCE M400G124.X LS-15 1000 ns M400G124.X LS -16 10000 Tj = 125 C VCE = 600 V VGE = 15 V RGon = 5 RGoff = 5 induct. load tdoff 100 30 V ns Tj = 125 C VCE = 600 V VGE = 15 V IC = 300 A induct. load tdoff 1000 tr tdon t don tr tf tf 100 t t 10 10 0 200 400 600 800 0 A IC 20 30 M400G124.X LS -17 M400G124.X LS-18 25 mJ A 3 15 5 200 7 10 Tj=125C, typ. 15 Tj=25C, typ. 5 Tj=125C, max. Tj=25C, max. IF VCC = 600 V Tj = 125 C VGE = 15 V RG= 20 300 100 40 Fig. 16 Typ. switching times vs. gate resistor RG Fig. 15 Typ. switching times vs. IC 400 10 RG 30 E offD 0 0 0 1 VF 2 3 100 IF V Fig. 17 Typ. CAL diode forward characteristic B 6 - 204 0 4 200 300 400 500 A Fig. 18 Diode turn-off energy dissipation per pulse 0898 http://store.iiic.cc/ (c) by SEMIKRON M400G124.XLS-19 0,1 M 400G124.XLS-20 1 K/W K/W 0,1 0,01 D=0,50 0,20 0,10 0,05 0,02 0,01 0,001 D=0,5 0,2 0,1 0,05 0,02 0,01 0,01 0,001 0,0001 single pulse single pulse ZthJC ZthJC 0,00001 0,00001 0,0001 tp 0,001 0,01 0,1 s 0,0001 0,00001 1 Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f 400 0,01 0,1 1 s M 400G124.XLS-23 500 VCC = 600 V Tj = 125 C VGE = 15 V RG= 3 A 0,001 Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f M 400G124.XLS-22 500 0,0001 tp A VCC = 600 V Tj = 125 C VGE = 15 V IF = 300 A RG= 3 400 5 5 300 300 7 7 200 200 15 30 15 100 100 30 IRR IRR 0 0 0 100 200 300 400 IF 500 0 A Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) 2000 diF/dt 4000 6000 8000 Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt) M 400G124.XLS-24 70 Typical Applications 10000 A/s C RG= 3 60 include IF= 400 A 5 50 Switched mode power supplies DC servo and robot drives 15 7 300 A 30 40 220 A Inverters DC choppers 30 150 A AC motor speed control 75 A 20 UPS Uninterruptable power supplies General power switching applications VCC = 600 V Tj = 125 C VGE = 15 V 10 Qrr Electronic (also portable) welders 0 0 2000 diF/dt 4000 6000 8000 10000 12000 A/s Fig. 24 Typ. CAL diode recovered charge (c) by SEMIKRON 0898 http://store.iiic.cc/ B 6 - 205 SKM 400 GB 124 D... SEMITRANS 3 Case D 56 UL Recognized File no. E 63 532 SKM 400 GB 124 D Dimensions in mm SKM 400 GAL 124 D SKM 400 GAR 124 D Case D 57 ( D 56) Case D 58 ( D 56) Case outline and circuit diagrams Mechanical Data Symbol Conditions M1 M2 to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units Values (M6) (M6) a w 6) Units min. typ. max. 3 27 2,5 22 - - - - - - - 5 44 5 44 5x9,81 325 Freewheeling diode B 6 - 201, remark 6. B 6 - 206 0898 http://store.iiic.cc/ Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Three devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 3). Larger packing units of 12 and 20 pieces are used if suitable Accessories B 6 - 4. SEMIBOX C - 1. (c) by SEMIKRON