© by SEMIKRON 0898 B 6 – 201
Absolute Maximum Ratings Values
Symbol Conditions 1) Units
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
DIN 40040
DIN IEC 68 T.1
1200
1200
570 / 400
1140 / 800
± 20
2500
–40 ... +150 (125)
2500
Class F
40/125/56
V
V
A
A
V
W
°C
V
Inverse Diode; Free-wheeling Diode FWD
IF = –IC
IFM = –ICM
IFSM
I2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
390 / 260
1140 / 800
2900
42 000
A
A
A
A2s
Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)CES
VGE(th)
ICES
IGES
VCEsat
VCEsat
gfs
VGE = 0, IC = 4 mA
VGE = VCE, IC = 12 mA
VGE = 0 Tj = 25 °C
VCE = VCES Tj = 125 °C
VGE = 20 V, VCE = 0
IC = 300 A VGE = 15 V;
IC = 400 A Tj = 25 (125) °C
VCE = 20 V, IC = 300 A
≥ VCES
4,5
–
–
–
–
–
110
–
5,5
8
24
–
2,1(2,4)
2,5(3,0)
–
–
6,5
14
–
0,35
2,45(2,85)
–
–
V
V
mA
mA
µA
V
V
S
CCHC
Cies
Coes
Cres
LCE
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
–
–
–
–
–
–
22
3,3
1,2
–
700
30
4
1,6
20
pF
nF
nF
nF
nH
td(on)
tr
td(off)
tf
Eon
Eoff
VCC = 600 V
VGE = –15 V / +15 V3)
IC = 300 A, ind. load
RGon = RGoff = 5 Ω
Tj = 125 °C
–
–
–
–
–
–
85
65
680
56
36
42
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
Inverse Diode and FWD of types “GAL”, GAR” 8)
VF = VEC
VF = VEC
VTO
rt
IRRM
Qrr
IF = 300 A VGE = 0 V;
IF = 400 A Tj = 25 (125) °C
Tj = 125 °C 2)
Tj = 125 °C 2)
IF = 300 A; Tj = 125 °C2)
IF = 300 A; Tj = 125 °C2)
–
–
–
–
–
–
2,0(1,8)
2,25(2,05)
1,1
–
136
36
2,5
–
1,2
3,5
–
–
V
V
V
mΩ
A
µC
Thermal character isti c s
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
–
–
–
–
–
–
0,05
0,125
0,038
°C/W
°C/W
°C/W
SEMITRANS® M
Low Loss IGBT Modules
SKM 400 GB 124 D
SKM 400 GAL 124D 6)
SKM 40 0 GAR 124D 6)
Features
•MOS input (voltage controlled)
•N channel, homogeneous Silicon
structure (NPT-Non punch
through-IGBT)
•Low inductance case
•Very low tail current with low
temperature dependence
•High short circuit capability,
self limiting to 6 * Icnom
•Latch-up free
•Fast & soft inverse CAL diodes 8)
•Isolated copper baseplate using
DCB Direct Copper Bonding
Technology without hard mould
•Large clearance (12 mm) and
creepage distances (20 mm)
Typical Applications → B 6 – 205
•Switching (not for linear use)
•Inverter drives
•UPS
1) Tcase = 25 °C, unless otherwise
specified
2) IF = – IC, VR = 600 V,
–diF/dt = 2000 A/µs, VGE = 0 V
3) Use VGEoff = –5... –15 V
6) The free-wheeling diodes of the
GAL and GAR types have the
data of the inverse diodes of
SKM 400 GB 124 D
8) CAL = Controlled Axial Lifetime
Technology.
Cases and mech. data
→ B 6 – 206
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