LESHAN RADIO COMPANY, LTD.
1
3
2
LBSS138LT1
SOT– 23 (TO–236AB)
200 mAMPS
50 VOLTS
RDS(on) = 3.5
1
2
3
N - Channel
DevicePackageShipping
ORDERING INFORMATION
LBSS138LT1 SOT–233000 Tape & Reel
W
J1
J1 = Device Code
W = Work Week
MARKING DIAGRAM
& PIN ASSIGNMENT
3
21
Drain
GateSource
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
•Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
•Miniature SOT–23 Surface Mount Package saves board space
Symbol Value Unit
Drain–to–Source Voltage VDSS 50 Vdc
Gate–to–Source Voltage – Continuous VGS ±20 Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs) ID
IDM
200
800
mA
Total Power Dissipation @ TA = 25°C PD225 mW
Operating and Storage Temperature
Range TJ, Tstg – 55 to
150 °C
Thermal Resistance – Junction–to–Ambient RθJA 556 °C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds TL260 °C
Rating
MAXIMUM RATINGS (TA = 25 oC unless otherwise noted)
LBSS138LT1
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•Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
LBSS138LT1G SOT–233000 Tape & Reel
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc) V(BR)DSS 50 – – Vdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS –
––
–0.1
0.5
µAdc
Gate–Source Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±0.1 µAdc
ON CHARACTERISTICS (Note 1.)
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.5 – 1.5 Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on) –
–5.6
–10
3.5
Ohms
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) gfs 100 – – mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss – 40 50 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss– 12 25
Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss – 3.5 5.0
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(V
td(on) – – 20 ns
Turn–Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) td(off) – – 20
1. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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LESHAN RADIO COMPANY, LTD.
LBSS138LT1
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LBSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
Figure 1. On–Region Characteristics
1
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Transfer Characteristics
Figure 3. On–Resistance Variation with
Temperature
VGS = 10 V
ID = 0.8 A
-55 -5 45 95 145
0.6
0.8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0
4
0
QT, TOTAL GATE CHARGE (pC)
8
500
VDS = 40 V
TJ = 25°C
1000
ID = 200 mA
1500
1.2
2
1.4
1.6
1.8
VGS = 4.5 V
ID = 0.5 A
2000
10
2
6
Vgs(th) , VARIANCE (VOLTS)
1
TJ, JUNCTION TEMPERATURE (°C)
ID = 1.0 mA
-55 -5 45 95 145
0.75
0.875
1.125
1.25
0
0.3
0.4
0.1
0.6
0.2
Figure 4. Threshold Voltage Variation
with Temperature
1 1.5 2 2.5 3
ID, DRAIN CURRENT (AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. Gate Charge
VDS = 10 V
150°C
25°C
-55°C
3.5
0.5
4
024 10
0
0.3
0.4
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
6
0.1
8
0.6
0.2
0.5
13 957
VGS = 3.25 V
VGS = 2.75 V
VGS = 2.5 V
VGS = 3.0 V
VGS = 3.5 V
0.7
0.8
TJ = 25°C
0.7
0.8
0.9
4.50.50
2.2
-30 20 70 120
2500 3000
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
Figure 6. On–Resistance versus Drain Current
0 0.1 0.2
2
5
6
Figure 7. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 8. On–Resistance versus Drain Current
0.001
0.1
1
Figure 9. On–Resistance versus Drain Current
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
ID, DIODE CURRENT (AMPS)
25°C
VGS = 2.5 V
TJ = 150°C
4
0 0.2 0.4 0.6
3
0.01
-55°C25°C
0.8
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.1 0.2
1
7
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
5
3
0
120
40
0
80
510
Ciss
15
0.05 0.15 0.25
150°C
-55°C
6
8
4
2
0.05 0.15 0.25
201.0 1.2
150°C
25°C
-55°C
8
9
7
100
20
60
Figure 11. Capacitance
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
2.5
3
ID, DRAIN CURRENT (AMPS)
25°C
VGS = 4.5 V
2
1.5
RDS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS)
0 0.2 0.40.05
1
4
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
3
2
0.1 0.3 0.5
150°C
-55°C
3.5
4.5
2.5
1.5
0.1 0.3 0.5
150°C
25°C
-55°C
4
4.5
3.5
10
1
0.25 0.450.15 0.35
5
5.5
6
0.25 0.450.15 0.35
25
Coss
Crss
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LESHAN RADIO COMPANY, LTD.
DJ
K
L
A
C
BS
H
GV
12
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIMMINMAXMINMAX
A0.1102 0.1197 2.80 3.04
B0.0472 0.0551 1.20 1.40
C0.0350 0.0440 0.89 1.11
D0.0150 0.0200 0.37 0.50
G0.0701 0.0807 1.78 2.04
H0.0005 0.0040 0.013 0.100
J0.0034 0.0070 0.085 0.177
K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.031
0.8
SOT-23
3
LESHAN RADIO COMPANY, LTD.
LBSS138LT1
LBSS138LT1
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