SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95 ✪
COMPLIMENTARY TYPE BSS64
PARTMARKING DETAIL BSS63 - T3
BSS63R - T6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -110 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -6 V
Continuous Collector Current IC-100 mA
Power Dissipation at Tamb
=25°C PTOT 330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR) -110 V IC=-10µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -100 V IC=-100µA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -6 V IE=-10µA
Collector Cut-Off Current IEBO -100
-50
nA
µ A
VCB
=-90V,
VCB
=-90V,Tamb
=150oC
Emitter Cut-Off Current IEBO -200 nA VEB
=-6V
Collector-Emitter
Saturation Voltage
VCE(sat) -250 mV IC=-25mA, IB=-2.5mA
Base-Emitter Saturation
Voltage
VBE(sat) -900 mV IC=-25mA, IB=-2.5mA
Static Forward Current
hFE
30
30
IC=-10mA, VCE
=-1V
IC=25mA, VCE
=1V
Transition Frequency
fT50
Typ
85 MHz VCE
=-5V, IC=25mA
f=35 MHz
Output Capacitance Cobo
Typ.
3pF
VCB
=-10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
BSS63
C
B
E
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