Rev. 2.6 Page 1 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
Cool MOS™ Power Transistor VDS @ T
j
max 650 V
RDS
(
on
)
0.28 Ω
ID15 A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
PG-TO220-3 PG-TO262-3 PG-TO220
P-TO220-3-31
123
Marking
15N60C3
15N60C3
15N60C3
Type Package Ordering Code
SPP15N60C3 PG-TO220 Q67040-S4600
SPI15N60C3 PG-TO262-3 Q67040-S4601
SPA15N60C3 PG-TO220-3-31 SP000216325
Maximum Ratings
Parameter Symbol Value Unit
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
15
9.4
151)
9.41)
A
Pulsed drain current, t
p
limited by T
j
max ID
p
uls 45 45 A
Avalanche energy, single pulse
ID=7.5A, VDD=50V
EAS 460 460 mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=15A, VDD=50V
EAR 0.8 0.8
Avalanche current, repetitive t
A
R limited by T
j
max I
A
R15 15 A
Gate source voltage static VGS ±20 ±20 V
Gate source voltage AC (f >1Hz) VGS ±30 ±30
Power dissipation, TC = 25°C Ptot 156 34 W
SPP_I
Operating and storage temperature T
j
,Tst
g
-55...+150 °C
Reverse diode dv/dt dv/dt 15 V/ns
6)
SPP15N60C3, SPI15N60C3
SPA15N60C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 15 A, Tj = 125 °C
dv/dt50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.8 K/W
Thermal resistance, junction - case, FullPAK RthJC
_
FP - - 3.7
Thermal resistance, junction - ambient, leaded RthJA - - 62
Thermal resistance, junction - ambient, FullPAK RthJA
_
FP - - 80
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s 3)
Tsold - - 260 °C
Electrical Characteristics, at T
j
=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=15A - 700 -
Gate threshold voltage VGS
(
th
)
ID=675µA, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C
Tj=150°C
-
-
0.1
-
1
100
µA
Gate-source leakage current IGSS VGS=30V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=9.4A
Tj=25°C
Tj=150°C
-
-
0.25
0.68
0.28
-
Ω
Gate input resistance RGf=1MHz, open drain - 1.23 -
Rev. 2.6 Page 2 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=9.4A
- 11.9 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 1660 - pF
Output capacitance Coss - 540 -
Reverse transfer capacitance Crss - 40 -
Effective output capacitance,4)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 80 -
Effective output capacitance,5)
time related
Co(tr) - 127 -
Turn-on delay time td(on) VDD=480V, VGS=0/10V,
ID=15A,
RG=4.3Ω
- 10 - ns
Rise time tr- 5 -
Turn-off delay time td(off) - 50 80
Fall time tf- 5 10
Gate Charge Characteristics
Gate to source charge Qgs VDD=480V, ID=15A - 7 - nC
Gate to drain charge Qgd - 29 -
Gate charge total QgVDD=480V, ID=15A,
VGS=0 to 10V
- 63 -
Gate plateau voltage V
(
plateau
)
VDD=480V, ID=15A - 5 - V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Soldering temperature for TO-263: 220°C, reflow
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
6ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.6 Page 3 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 15 A
Inverse diode direct current,
pulsed ISM - - 45
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=480V, IF=IS ,
diF/dt=100A/µs
- 460 - ns
Reverse recovery charge Qrr - 27 - µC
Peak reverse recovery current Irrm - 55 - A
Peak rate of fall of reverse
recovery current
dirr/dt Tj=25°C - 1300 - A/µs
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPA SPA
Rth1 0.012 0.012 K/W Cth1 0.0002495 0.0002495 Ws/K
Rth2 0.023 0.023 Cth2 0.0009406 0.0009406
Rth3 0.043 0.043 Cth3 0.001298 0.001298
Rth4 0.156 0.176 Cth4 0.00362 0.00362
Rth5 0.178 0.371 Cth5 0.009046 0.008025
Rth6 0.072 2.522 Cth6 0.412 0.412
SPP_I SPP_I
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
Rev. 2.6 Page 4 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
20
40
60
80
100
120
140
W
170 SPP15N60C3
Ptot
2 Power dissipation FullPAK
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
Tj
0
5
10
15
20
25
W
35
Ptot
3 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, TC = 25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
Rev. 2.6 Page 5 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
5 Transient thermal impedance
ZthJC = f(tp)
parameter: D=tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
ZthJC = f(tp)
parameter: D = tp/t
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
s
tp
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
ZthJC
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 4 8 12 16 20 V 28
VDS
0
10
20
30
40
A
60
ID
Vgs = 20V
Vgs = 7V
Vgs = 6.5V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 4 8 12 16 20 V 28
VDS
0
5
10
15
20
A
30
ID
Vgs = 20V
Vgs = 7V
Vgs = 6V
Vgs = 5.5V
Vgs = 5V
Vgs = 4.5V
Vgs = 4V
Rev. 2.6 Page 6 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 5 10 15 20 A 30
ID
0.4
0.6
0.8
1
1.2
1.4
Ω
1.8
RDS(on)
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 7V
Vgs = 20V
10 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 9.4 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.2
0.4
0.6
0.8
1
1.2
Ω
1.6 SPP15N60C3
RDS(on)
typ
98%
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 2 4 6 V 10
VGS
0
10
20
30
40
A
60
ID
25°C
150°C
12 Typ. gate charge
VGS =f (QGate)
parameter: ID = 15 A pulsed
0 10 20 30 40 50 60 70 80 nC 100
QGate
0
2
4
6
8
10
12
V
16 SPP15N60C3
VGS
0,8 VDS max
DS max
V
0,2
Rev. 2.6 Page 7 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: T
j
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPP15N60C3
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
14 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
3
6
9
A
15
IAR
Tj(START)=25°C
Tj(START)=125°C
15 Avalanche energy
EAS = f(Tj)
par.: ID = 7.5 A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
0.1
0.2
0.3
mJ
0.5
EAS
16 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPP15N60C3
V(BR)DSS
Rev. 2.6 Page 8 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
17 Avalanche power losses
PAR = f (f )
parameter: EAR=0.8mJ
10 410 510 6
Hz
f
0
100
200
300
400
500
600
700
W
900
PAR
18 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
19 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
3
6
9
µJ
15
Eoss
Rev. 2.6 Page 9 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
Definition of diodes switching characteristics
Rev. 2.6 Page 10 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
PG-TO220-3-1, PG-TO220-3-21 : Outline
Rev. 2.6 Page 11 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
PG-TO220-3-31 (FullPAK)
Rev. 2.6 Page 12 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
PG-TO262-3-1/PG-TO262-3-21 (I²-PAK)
Rev. 2.6 Page 13 2005-09-21
SPP15N60C3, SPI15N60C3
SPA15N60C3
Published by
Infineon Technologies AG
81726 München
Germany
© Infineon Technologies AG 2006
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.6 Page 14 2005-09-21
