PZT3904
NPN General
Purpose Amplifier
Features
• Surface Mount SOT-223 Package
• Low Voltage and Low Current
omponents
20736 Marilla Street Chatsworth
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Revision: A 2015/08/05
DIMENSIONS
INCHES MM
DIM
MIN MAX MIN MAX NOTE
SOT-223
1 2
3.EMITTER
2.COLLECTOR
3
1.BASE
• General Purpose Amplifier and Switch Application
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• Halogen free available upon request by adding suffix "-HF"
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
• Marking: ZT3904
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 200 mA
PC Collector Power Dissipation 1 W
RθJA Thermal Resistance From Junction To Ambient 125 ℃/W
Tj Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
B .130 .146 3.30 3.70
C .264 .287 6.70 7.30
D .001 .004 0.02 0.10
E .114 .122 2.90 3.10
F .091 2.30
G - - - .071 --- 1.80
H .009 .014 0.23 0.35
J .030 --- 0.75 - - -
A .248 .264 6.30 6.70
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Revision: A 2015/08/05
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=0.01mA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 40 V
Emitter-base breakdown voltage V(BR)EBO IE=0.01mA,IC=0 6 V
Collector cut-off current ICBO VCB=30V,IE=0 50 nA
Collector cut-off current ICEX VCE=30V, VEB=3V 50 nA
Emitter cut-off current IEBO VEB=5V, IC=0 50 nA
hFE(1) VCE=1V, IC=0.1mA 40
hFE(2) VCE=1V, IC=1mA 70
hFE(3) VCE=1V, IC=10mA 100 300
DC current gain
hFE(4) VCE=1V, IC=50mA 60
IC=10mA,IB=1mA 0.2 V
Collector-emitter saturation voltage VCE(sat) IC=50mA,IB=5mA 0.3 V
IC=10mA,IB=1mA 0.65 0.85 V
Base-emitter saturation voltage VBE(sat) IC=50mA,IB=5mA 0.95 V
Transition frequency fT VCE=20V,IC=10mA, f=100MHz 300 MHz
Collector output capacitance Cob VCB=5V, IE=0, f=1MHz 4 pF
Delay time td 35
Rise time tr
VCC=3V, VBE(off)=0.5V IC=10mA,
IB1= -IB2=1mA 35 ns
Storage time ts 200
Fall time tf
VCC=3V, IC=10mA,
IB1=-IB2=1mA 50
ns
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Ty
pical Characteristics
h —— I
Static Characteristic
FE
C
18
300
℃
a
15
a
12
200
9
6
100
3
B
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.1
0.3
1
3
10
30
100 200
COLLECTOR CURRENT I
(mA)
COLLECTOR
-EMITTER VOLTAGE
V
(V)
C
CE
—— I
V
——
I
V
CEsat
BEsat
C
C
1.2
600
300
T =25
℃
a
T =100
℃
a
0.8
T =25
℃
a
100
T =100
℃
a
0.4
30
β=10
β=10
10
0.0
10
30
COLLECTOR
CURRENT
100
(mA)
200
1
3
10
30
100
200
I
COLLECTOR CURRENT I (mA)
C
C
I
——
V
C / C
——
V / V
C
BE
ob ib
CB EB
9
200
COMMON EMITTER
f=1MHz
100
V =1V
I =0/I =0
CE
E C
T =25
℃
a
C
ib
30
T
=100
℃
a
10
3
3
C
ob
T =25
℃
a
1
0.3
1
0.1
0.1
0.3
1
3
10
20
0.2
0.4
0.6
0.8
1.0
1.2
REVERSE VOLTAGE V (V)
BASE-
E
MMITER VOLTAGE
V
(V)
BE
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT
I
(mA)
C
VOLTAGE
V
(mV)
CEsat
BASE-EMITTER SATURATION
DC CURRENT GAIN h
FE
CAPACITANCE C
(pF)
VOLTAGE V (V)
BEsat
COMMON
EMITTER
T =25
℃
a
80μA
72μA
64μA
56μA
48μA
40μA
32μA
24μA
16μA
I =8μA
COMM
O
V =1V
CE
N
T =100
T =25
℃
Revision: A 2015/08/05
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Typical Characteristics
P —— T
f —— I C a
T C 1200
300 V =20V
CE 1100
T =25
℃
a 1000
240 900
800
200 700
600
500
400
140 300
200
100
100 0
1 3 10 30 60 0 25 50 75 100 125 150
COLLECTOR CURRENT I (mA) AMBIENT TEMPERATURE T (
℃
)
C a
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR POWER DISSIPATION
P (mW)
C
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Ordering Information :
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represented on our website, harmless against all damages.
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approval of Micro Commercial Components Corporation.
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distributors.
Device Packing
Part Number-TP
Tape&Reel;2.5Kpcs/Reel
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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