Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate Values Conditions 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 25 / 15 50 / 30 20 145 - 40 . . .+150 (125) 2 500 Class F 40/125/56 V V A A V W C V Inverse Diode Tcase = 25/80 C IF= - IC IFM= - ICM Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C IFSM tp = 10 ms; Tj = 150 C I2t 25 / 15 50 / 30 200 200 A A A A2s RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C SEMITRANS(R) M IGBT Modules SKM 22 GD 123 D SKM 22 GD 123 D L*) Sixpack Characteristics Symbol Conditions 1) V(BR)GES VGE(th) ICES VGE = 0, IC = 0,5 mA VGE = VCE, IC = 1 mA Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C VGE = 20 V, VCE = 0 IC = 15 A VGE = 15 V; IC = 22 A Tj = 25 (125) C VCE = 20 V, IC = 15 A IGES VCEsat VCEsat gfs per IGBT min. typ. > VCES - 4,5 5,5 - 0,3 - 1,8 - - - 2,5(3,1) - 3(3,7) - 12 max. Units - 6,5 0,5 - 150 3(3,7) - - V V mA mA nA V V S CCHC Cies Coes Cres LCE VGE = 0 VCE = 25 V f = 1 MHz - - - - - - 1000 150 70 - 300 - - - 60 pF pF pF pF nH td(on) tr td(off) tf Eon 5) Eoff 5) - - - - - - 40 35 350 70 2 1,4 - - - - - - ns ns ns ns mWs mWs Inverse Diode 8) VF = VEC IF = 15 A VGE = 0 V; IF = 25 A Tj = 25 (125) C VF = VEC Tj = 125 C VTO Tj = 125 C rT IF = 15 A; Tj = 25 (125) C2) IRR Qrr IF = 15 A; Tj = 25 (125) C2) - - - - - - 2,0(1,8) 2,3(2,1) 1,1 45 12(16) 1(2,7) 2,5 - 1,2 70 - - V V V m A C Thermal Characteristics per IGBT Rthjc per diode 8) Rthjc per module Rthch - - - VCC = 600 V VGE = + 15 V / - 15 V3) IC = 15 A, ind. load RGon = RGoff = 52 Tj = 125 C by SEMIKRON - - - 0898 0,86 1,5 0,05 C/W C/W C/W GD Features * MOS input (voltage controlled) * N channel, homogeneous Si * Low inductance case * Very low tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Latch-up free * Fast & soft inverse CAL diodes8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology * Large clearance (9 mm) and creepage distances (13 mm). Typical Applications * Switched mode power supplies * Three phase inverters for AC motor speed control * General power switching applications * Pulse frequencies also above 15 kHz Tcase = 25 C, unless otherwise specified 2) IF = - IC, VR = 600 V, - diF/dt = 400 A/s, VGE = 0 V 3) Use: VGEoff = -5 ... -15 V 5) See fig. 2 + 3; RGoff = 52 8) CAL = Controlled Axial Lifetime Technology. *) Main terminals = 2 mm dia. Cases and mech. data B6 - 68 Sixpack 1) B 6 - 63 SKM 22 GD 123 D ... 3WRW >:@ YSR M022GD12.xls-2 Tj = 125 C VCE = 600 V VGE = + 15 V RG = 52 P:V (RQ (RII ( 7& >&@ Fig. 1 Rated power dissipation Ptot = f (TC) ,& $ Fig. 2 Turn-on /-off energy = f (IC) IC [A] 2.vpo M022GD12.xls-3 P:V Tj = 125 C VCE = 600 V VGE = + 15 V IC = 15 A 1 pulse TC = 25 C Tj < 150 C W S XV XV (RQ PV (RII PV ( 5* , &6&, & YSR Tj < 150 C VGE = + 15 V tsc < 10 ms L < 25 nH ICN = 15 A Tj < 150 C VGE = + 15 V RGoff = 52 IC = 15 A Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) YSR VCE [V] Fig. 3 Turn-on /-off energy = f (RG) , &SXOV, & 1RWH $OORZHG QXPEHUV RI VKRUW FLUFXLW 7LPH EHWZHHQ VKRUW FLUFXLW!V Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 64 9&( >9@ 9&( >9@ Fig. 6 Safe operating area at short circuit IC = f (VCE) 0898 (c) by SEMIKRON ,& >$@ YSR Tj = 150 C VGE > 15 V 7& >&@ Fig. 8 Rated current vs. temperature IC = f (TC) ,& >$@ ,& >$@ YSR YSR 9 9 9 9 9 9 9 9 9 9 9 9 9&( >9@ Fig. 9 Typ. output characteristic, tp = 80 s; 25 C 9&( >9@ Fig. 10 Typ. output characteristic, tp = 80 s; 125 C ,& >$@ YSR Pcond(t) = VCEsat(t) . IC(t) VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) . IC(t) VCE(TO)(Tj) 1,5 + 0,002 (Tj - 25) [V] typ.: rCE(Tj) = 0,067 + 0,00027 (Tj - 25) [] max.: rCE(Tj) = 0,100 + 0,00033 (Tj - 25) [] valid for VGE = + 15 +2 [V]; IC > 0,3 ICnom -1 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON 9*( >9@ Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 0898 B 6 - 65 SKM 22 GD 123 D ... 9*( >9@ & >Q)@ YSR YSR 9 ICpuls = 15 A VGE = 0 V f = 1 MHZ 9 &LVV &RVV &UVV 4* >Q&@ Fig. 13 Typ. gate charge characteristic 9&( >9@ Fig. 14 Typ. capacitances vs.VCE M022GD12.xls - 16 M022GD12.xls-15 Tj = 125 C VCE = 600 V VGE = + 15 V RGon = 52 RGoff = 52 induct. load QV WGRII WI WGRII QV WI WGRQ WGRQ WU WU W Tj = 125 C VCE = 600 V VGE = + 15 V IC = 15 A induct. load W & , $ Fig. 15 Typ. switching times vs. IC * 5 Fig. 16 Typ. switching times vs. gate resistor RG M022GD12.X LS-18 5* 9&& 9 7M & 9*( 9 P- 120 ( RII' Fig. 17 Typ. CAL diode forward characteristic B 6 - 66 ) , $ Fig. 18 Diode turn-off energy dissipation per pulse 0898 (c) by SEMIKRON (c) by SEMIKRON 0898 B 6 - 67 SKM 22 GD 123 D ... SEMITRANS Sixpack Case D 67 UL Recognized File no. E 63 532 SKM 22 GD 123 D SEMITRANS Sixpack Case D 68 UL Recognized Special version on request SKM 22 GD 123 DL SKM 40 GD 123 DL SKM 75 GD 123 DL Dimensions in mm Case outlines and circuit diagrams Mechanical Data Symbol M1 a w B 6 - 68 Conditions to heatsink, SI Units to heatsink, US Units (M5) min. 4 35 - - Values typ. max. - 5 - 44 - 5x9,81 - 175 0898 Units Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESD). Please observe the international standard IEC 747-1, Chapter IX. Two devices are supplied in one SEMIBOX A. Larger packing units (10 and 20 pieces) are used if suitable. SEMIBOX C - 1. (c) by SEMIKRON