PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 - 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB182503EL H-33288-6 PTFB182503FL H-34288-4/2 Features Two-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1.85 A, = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 10 MHz carrier spacing Broadband internal input and output matching * Enhanced for use in DPD error correction systems * Typical two-carrier WCDMA performance, 1880 MHz, 30 V - Average output power = 50 W - Linear gain = 19 dB - Drain efficiency = 28 % - Intermodulation distortion = -35 dBc * Typical CW performance, 1880 MHz, 30 V - Output power at P1dB = 240 W - Efficiency = 55% * Increased negative gate-source voltage range for improved performance in Doherty peaking amplifiers * Integrated ESD protection. Human Body Model, Class 2 (minimum) * Capable of handling 10:1 VSWR @ 30 V, 240 W (CW) output power * Pb-free, RoHS compliant 35 30 -35 Efficiency 25 -40 20 IM3 -45 15 ACPR -50 10 -55 Drain Efficiency (%) IM3 (dBc), ACPR (dBc) -30 * 5 38 40 42 44 46 48 50 Average Output Power (dBm) RF Characteristics Two-carrier WCDMA Specifications (tested in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 50 W average 1 = 1840 MHz, 2 = 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 18 19 -- dB Drain Efficiency hD 27 28 -- % Intermodulation Distortion IMD -- -35 -31 dBc All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL RF Characteristics (cont.) Two-tone Specifications (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.85 A, POUT = 220 W PEP, = 1840 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps -- 18 -- dB Drain Efficiency hD -- 40 -- % Intermodulation Distortion IMD -- -28 -- dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 -- -- V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS -- -- 1.0 A Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS -- -- 10.0 A On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) -- 0.03 -- W Operating Gate Voltage VDS = 30 V, IDQ = 1.85 A VGS 2.3 2.8 3.3 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS -- -- 1.0 A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS -6 to +10 V Operating Voltage VDD 24 to 30 V Junction Temperature TJ 200 C Storage Temperature Range TSTG -40 to +150 C Thermal Resistance (TCASE = 70C, 50 W WCDMA) RqJC 0.262 C/W Ordering Information Type and Version Order Code Package Description Shipping PTFB182503EL V1 PTFB182503ELV1XWSA1 H-33288-6, slotted flange Tray PTFB182503EL V1 R250 PTFB182503ELV1R250XTMA1 H-33288-6, slotted flange Tape & Reel, 250 pcs PTFB182503FL V2 PTFB182503FLV2XWSA1 H-34288-4/2, earless flange Tray PTFB182503FL V2 R250 PTFB182503FLV2R250XTMA1 H-34288-4/2, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Typical Performance (data taken in a production test fixture) Two-Carrier WCDMA at Various Biases Six-Carrier GSM vs Power Out VDD = 30V, IDQ =1.85 A = 1842 MHz, PAR = 7.1 dB VDD = 30 V, = 1842 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 5 MHz carrier spacing -5 IDQ = 2.25 A -45 -50 IDQ = 2.05 A IDQ = 1.85 A -55 38 40 42 44 46 48 -20 20 -35 15 -40 10 -45 50 5 37 39 41 51 40 16 30 15 20 Efficiency 13 19.5 Power Gain (dB) 17 19.0 18.5 1.65 A 1.85 A 10 0 17.0 55 1.45 A 18.0 17.5 2.05 A 2.25 A 36 38 40 42 44 46 48 50 52 54 Output Power (dBm) Output Power (dBm) Data Sheet 49 20.0 Drain Efficiency (%) Gain (dB) 50 50 47 Power Sweep 60 Gain 45 45 VDD = 30 V, = 1842 MHz 70 40 43 Output Power (dBm) 20 35 25 -30 VDD = 30 V, IDQ = 1.85 A, = 1842 MHz 14 30 Efficiency -25 CW Performance Gain & Efficiency vs. Output Power 18 35 Efficiency Average Output Power (dBm) 19 40 IM3 Low -15 IDQ = 1.45 A -40 45 IM3 Up -10 IDQ = 1.65 A -35 IMD (dBc) 3rd Order IMD (dBc) -30 3 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Typical Performance (cont.) Power Sweep, CW Conditions Voltage Sweep VDD = 30 V, IDQ = 1850 mA, = 1842 MHz 25 160 Gain 15 gb182503eflV1 July 29, 2009 6:57:48 PM 200 240 25 27 5 29 b182503-v1efl-v1 31 0. 0 0. 45 Nornalized to 50 Ohms 0. Broadband Circuit Impedance 3 Z0 = 50 D R --> RD G E NE RA T O jX R jX 1780 2.99 -2.48 1.33 -0.49 1800 2.95 -2.30 1.33 -0.38 1820 2.89 -2.13 1.31 -0.27 1840 2.84 -1.96 1.29 -0.16 1860 2.80 -1.76 1.29 -0.02 1880 2.78 -1.58 1.28 0.10 1900 2.74 -1.39 1.29 0.23 1920 2.72 -1.21 1.29 0.36 0.0 Z Source 1780 MHz 0.1 0. 2 4 of 12 Rev. 07.1, 2013-08-06 45 0 0. 5 0. 3 0. Data Sheet 0.2 R 1920 MHz <--- MHz Z Load E W AV Z Load W W ARD LOA D T HS T O L E NG Z Source W Frequency - W AV E LE NGT H S T OW A S 0 .1 G 0.1 Z Load 0. 2 Z Source 10 33 Supply Voltage (V) 5 Output Power (W) 23 0. 4 0.5 120 20 0.4 80 -40 0. 40 30 IM3 Up -50 14 0 -30 0.3 TCA S E = 25C TCA S E = 90C 40 4 15 3rd Order IMD (dBc) 35 Drain Efficiency (%) Efficiency -20 0. Gain (dB) 45 16 Efficiency 55 17 50 0.7 Gain 18 -10 0. 6 65 Gain (dB), Drain Efficiency (%) 19 IDQ = 1850 mA, = 1842 MHz, tone spacing = 1 MHz, Output Power (PEP) = 53 dBm PTFB182503EL PTFB182503FL PTFB182503EL/FL_INPUT Reference Circuit C803 1000 pF S3 8 C802 1000 pF C801 1000 pF 4 In Out 2 1 NC NC 3 6 5 7 R803 100 Ohm R802 1200 Ohm R805 10 Ohm S1 3 2 C S2 4 1 S B R804 10 Ohm 3 E R801 1300 Ohm TL112 TL115 TL108 TL121 TL125 TL110 3 1 TL107 2 3 1 TL118 TL116 TL132 R101 10 Ohm TL124 2 C102 4710000 pF 2 C105 10 pF 3 TL117 1 TL113 TL111 TL102 RF_IN C101 7.5 pF TL127 TL131 TL104 TL130 TL129 TL133 1 TL103 TL105 TL122 2 3 1 2 3 4 GATE DUT (Pin G) TL128 C104 0.3 pF TL114 C103 4710000 pF PTFB182503EL/FL_OUTPUT TL139 2 3 1 TL138 C106 10 pF TL137 TL119 TL136 R102 10 Ohm TL123 2 TL120 TL101 TL109 3 2 1 er = 3.48 H = 30 mil TL106 TL126 3 b 1 8 2 5 0 3 e f l _ b d i n _ 0 8 - 1 7 - 2 0 1 0 RO/RO4350B1 1 TL135 TL134 Reference circuit input schematic for = 1880 MHz C210 100000 pF C207 10000000 pF TL225 TL228 2 TL218 3 2 3 C203 1000000 pF C215 2200000 pF 1 2 TL217 3 1 TL211 TL210 3 2 1 1 C206 0.6 pF DRAIN DUT (Pin D) TL204 TL241 TL239 TL233 TL240 2 TL208 TL236 TL231 TL230 3 1 TL232 DUT (Pin V) TL229 2 TL223 TL235 C214 10 pF TL205 3 1 4 TL238 TL220 C211 0.9 pF TL237 TL226 VDD C202 10000000 pF TL207 DUT (Pin V) TL214 2 3 1 C205 0.6 pF TL213 3 1 TL201 TL203 RF_OUT C212 0.9 pF 2 TL227 1 3 1 C208 10000000 pF TL242 TL222 TL234 C204 10000000 pF 2 TL221 4 TL206 TL224 TL202 TL219 C209 100000 pF 2 TL212 1 3 C213 2200000 pF TL209 2 TL216 b 1 8 2 5 0 3 e f l _ b d o u t _ 0 8 - 1 7 - 2 0 1 0 2 er = 3.48 H = 30 mil TL215 3 1 3 VDD C201 1000000 pF RO/RO4350B1 Reference circuit output schematic for = 1880 MHz Data Sheet 5 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Reference Circuit (cont.) Description DUT PTFB182503EL or PTFB182503FL PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 1880 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101, TL117 0.022 , 78.27 W = 0.762, L = 2.159 W = 30, L = 85 TL102 0.035 , 51.58 W = 1.651, L = 3.358 W = 65, L = 132 TL103 0.050 , 9.67 W = 13.970, L = 4.445 W = 550, L = 175 TL104 0.031 , 51.58 W = 1.651, L = 3.018 W = 65, L = 119 TL105 W1 = 13.970, W2 = 0.762, W3 = 13.970, W4 = 0.762 W1 = 550, W2 = 30, W3 = 550 W4 = 30 TL106, TL107 W = 0.762 W = 30 TL108, TL136 0.010 , 68.02 W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 40, W2 = 40, W3 = 40 TL109, TL110, TL132, TL139 0.010 , 78.27 W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40 TL111 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80 TL112, TL134 0.014 , 38.82 W = 2.540, L = 1.321 W = 100, L = 52 TL113 0.020 , 78.27 W = 0.762, L = 2.007 W = 30, L = 79 TL114 0.099 , 92.53 W = 0.508, L = 9.957 W = 20, L = 392 TL115 0.016 , 68.02 W = 1.016, L = 1.524 W = 40, L = 60 TL116, TL137 0.017 , 78.27 W = 0.762, L = 1.727 W = 30, L = 68 TL118, TL119 0.001 , 68.02 W = 1.016, L = 0.127 W = 40, L = 5 TL120, TL121 0.013 , 78.27 W = 0.762, L = 1.270 W = 30, L = 50 TL122 0.022 , 9.67 W = 13.970, L = 1.981 W = 550, L = 78 TL123, TL124 0.007 , 68.02 W = 1.016, L = 0.686 W = 40, L = 27 TL125, TL126 0.118 , 78.27 W = 0.762, L = 11.684 W = 30, L = 460 TL127 0.008 , 45.17 W = 2.032, L = 0.762 W = 80, L = 30 TL128 0.000 , 45.17 W = 2.032, L = 0.025 W = 80, L = 1 TL129 0.023 , 9.67 W1 = 13.970, W2 = 13.970, W3 = 2.032 W1 = 550, W2 = 550, W3 = 80 TL130 0.000 , 9.67 W = 13.970, L = 0.025 W = 550, L = 1 TL131 (taper) 0.028 , 9.67 / 51.58 W1 = 13.970, W2 = 1.651, L = 2.515 W1 = 550, W2 = 65, L = 99 TL133 0.050 , 9.67 W = 13.970, L = 4.470 W = 550, L = 176 TL135 0.015 , 68.02 W = 1.016, L = 1.514 W = 40, L = 60 TL138 0.010 , 78.27 W = 0.762, L = 0.991 W = 30, L = 39 table continued on page 7 Data Sheet 6 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Reference Circuit (cont.) Electrical Characteristics at 1880 MHz Transmission Electrical Dimensions: mm Dimensions: mils Line Characteristics TL201, TL219, TL220, TL222 W = 0.002, ANG = 90.000, R = 0.002 W = 2, ANG = 3543307, R = 70 TL202 Output W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80 TL203 0.012 , 51.58 W = 1.651, L = 1.118 W = 65, L = 44 TL204 0.084 , 6.86 W = 20.320, L = 7.366 W = 800, L = 290 TL205 0.011 , 45.17 W = 2.032, L = 1.016 W = 80, L = 40 TL206 0.028 , 23.60 W = 4.928, L = 2.540 W = 194, L = 100 TL207 0.028 , 23.79 W = 4.877, L = 2.540 W = 192, L = 100 TL208 (taper) 0.018 , 6.86 / 8.31 W1 = 20.320, W2 = 16.510, L = 1.575 W1 = 800, W2 = 650, L = 62 TL209, TL210 0.076 , 34.08 W = 3.048, L = 7.112 W = 120, L = 280 TL211, TL216, TL224, TL225 0.032 , 34.08 W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 120, W2 = 120, W3 = 120 TL212, TL228, TL217, TL218, TL227 0.024 , 34.08 W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 = 90 TL213 0.008 , 34.08 W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30 TL214, TL215 0.051 , 34.08 W = 3.048, L = 4.826 W = 120, L = 190 TL221, TL242 0.013 , 51.58 W = 1.651, L = 1.270 W = 65, L = 50 TL223 (taper) 0.018 , 19.45 / 51.58 W1 = 6.248, W2 = 1.651, L = 1.651 W1 = 246, W2 = 65, L = 65 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700 TL226 TL229, TL230 0.000 , 19.45 W = 6.248, L = 0.025 W = 246, L = 1 TL231 (taper) 0.038 , 8.31 / 19.45 W1 = 16.510, W2 = 6.248, L = 3.378 W1 = 650, W2 = 246, L = 133 TL232 W1 = 6.248, W2 = 0.025 , W3 = 6.248, W4 = 0.025 W1 = 246, W2 = 1, W3 = 246, W4 = 1 TL233, TL234, TL237, 0.000 , 146.88 TL238 W = 0.025, L = 0.025 W = 1, L = 1 W = 1.651, L = 0.508 W = 65, L = 20 W = 16.510, L = 0.025 W1 = 20.320, W2 = 0.025, W3 = 20.320 W4 = 0.025 W = 650, L = 1 W1 = 800, W2 = 1, W3 = 800, W4 = 1 W = 20.320, L = 0.025 W = 800, L = 1 TL235 0.005 , 51.58 TL236 0.000 , 8.31 TL239 TL240, TL241 Data Sheet 0.000 , 6.86 7 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFB182503EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower RO4350, .030 (60) RO4350, .030 (60) VDD C803 C802 R803 R801 R802 S1 C210 C215 C203 C207 S2 + R805 R804 VDD S3 C801 + 10 F C202 R101 C206 C105 C102 C211 RF_IN RF_OUT C101 C212 C214 C104 C103 C205 C106 R102 10 F + C204 VDD C208 C213 C201 C209 PTFB182503_IN_02 PTFB182503_OUT_02 b182503efl_CD_08-17-2010 Reference circuit assembly diagram (not to scale) Data Sheet 8 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Reference Circuit (cont.) Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB C102, C103 Chip capacitor, 4.71 F ATC 493-2372-2-ND C104 Chip capacitor, 0.3 pF ATC ATC100A0R3BW150XB C105, C106 Chip capacitor, 10 pF ATC ATC100A100FW150XB C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND R101, R102, R804, R805 Resistor, 10 W Digi-Key P10ECT-ND R801 Resistor, 1300 W Digi-Key P1.3KGCT-ND R802 Resistor, 1200 W Digi-Key P1.2KGCT-ND R803 Resistor, 100 W Digi-Key P100ECT-ND S1 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP5616TA-ND S3 Voltage Regulator Digi-Key LM78L05ACM-ND Output C201, C203 Chip capacitor, 0.1 F Digi-Key 445-1411-2-ND C202, C204 Capacitor, 10 F Garrett Electronics 281M5002106K C205, C206 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB C207, C208 Chip capacitor, 10 F Digi-Key 587-1818-2-ND C209, C210 Chip capacitor, 0.1 F Digi-Key 399-1267-2-ND C211, C212 Chip capacitor, 0.9 pF ATC ATC100B0R9BW500XB C213, C215 Chip capacitor, 2.2 F Digi-Key 445-1447-2-ND C214 Chip capacitor, 10 pF ATC ATC100B100FW500XB Data Sheet 9 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Package Outline Specifications Package H-33288-6 45 X 2.032 [45 X .080] 4X 30 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) V D 4.889.510 [.192.020] V S CL 2X R1.626 [R.064] E G 9.779 [.385] 9.398 [.370] 19.558.510 [.770.020] F CL 2X 12.700 [.500] 2X 22.860 [.900] 27.940 [1.100] 4.039 +.254 -.127 [.159 +.010 -.005 ] 22.352.200 [.880.008] H-33288-6_po_01_10-03-2012 1.575 [.062] (SPH) CL 1.016 [.040] 34.036 [1.340] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [0.005] unless specified otherwise. 4. Pins: D - drain; G - gate; S - source; V - VDD; E, F - N.C. 5. Lead thickness: 0.10 + 0.051/-0.025 mm [0.004 + 0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Data Sheet 10 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL PTFB182503FL Package Outline Specifications (cont.) Package H-34288-4/2 22.860 [.900] 45 X 2.032 [45 X .080] 2X 5.080 [.200] 2X 1.143 [.045] CL 2X 30 V D V 4.889.510 [.192.020] 9.398 [.370] CL +.381 4X R0.508 -.127 +.015 [ R.020 -.005 ] 9.779 [.385] 19.558.510 [.770.020] G 2X 12.700 [.500] 4.039 +.254 -.127 [.159 +.010 -.005 ] 22.352.200 [.880.008] H-34288-4/2_po_03_08-13-2012 1.575 [.062] (SPH) CL 1.016 [.040] 23.114 [.910] S Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [0.005] unless specified otherwise. 4. Pins: D - drain; G - gate; S - source; V - VDD 5. Lead thickness: 0.10 + 0.051/-0.025 mm [0.004 + 0.002/-0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 11 of 12 Rev. 07.1, 2013-08-06 PTFB182503EL V1 / PTFB182503FL V2 Revision History: 2013-08-06 Previous Version: 2012-10-03, Data Sheet Page Subjects (major changes since last revision) 2 Added operating voltage in Maximum Ratings table Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2013-08-06 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 12 of 12 Rev. 07.1, 2013-08-06