All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL
PTFB182503FL
5
10
15
20
25
30
35
-55
-50
-45
-40
-35
-30
38 40 42 44 46 48 50
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
Average Output Power (dBm)
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz, 3GPP
WCDMA signal, PAR = 7.5 dB,
10 MHz carrier spacing
ACPR
IM3
Efficiency
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.85 A, POUT = 50 W average
ƒ1 = 1840 MHz, ƒ2 = 1845 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 7.5 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 18 19 — dB
Drain Efficiency hD 27 28 — %
Intermodulation Distortion IMD — –35 –31 dBc
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1805 – 1880 MHz
Description
The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs
intended for use in multi-standard cellular power amplifier applications
in the 1805 to 1880 MHz frequency band. Features include input
and output matching, high gain, wide signal bandwidth and reduced
memory effects for improved DPD correctability. Manufactured with
Infineon's advanced LDMOS process, these devices provide excellent
thermal performance and superior reliability.
PTFB182503EL
H-33288-6
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance,
1880 MHz, 30 V
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1880 MHz, 30 V
- Output power at P1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS compliant
PTFB182503FL
H-34288-4/2
Data Sheet 2 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL
PTFB182503FL
RF Characteristics (cont.)
Two-tone Specifications (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.85 A, POUT = 220 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 18 — dB
Drain Efficiency hD — 40 — %
Intermodulation Distortion IMD — –28 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.03 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1.85 A VGS 2.3 2.8 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Operating Voltage VDD 24 to 30 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 50 W WCDMA) RqJC 0.262 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTFB182503EL V1 PTFB182503ELV1XWSA1 H-33288-6, slotted flange Tray
PTFB182503EL V1 R250 PTFB182503ELV1R250XTMA1 H-33288-6, slotted flange Tape & Reel, 250 pcs
PTFB182503FL V2 PTFB182503FLV2XWSA1 H-34288-4/2, earless flange Tray
PTFB182503FL V2 R250 PTFB182503FLV2R250XTMA1 H-34288-4/2, earless flange Tape & Reel, 250 pcs
PTFB182503EL
PTFB182503FL
Data Sheet 3 of 12 Rev. 07.1, 2013-08-06
-55
-50
-45
-40
-35
-30
38 40 42 44 46 48 50
3rd Order IMD (dBc)
Average Output Power (dBm)
I
DQ
= 1.45 A
I
DQ
= 2.25 A
I
DQ
= 1.85 A
I
DQ
= 2.05 A
I
DQ
= 1.65 A
5
10
15
20
25
30
35
40
45
-45
-40
-35
-30
-25
-20
-15
-10
-5
37 39 41 43 45 47 49 51
IMD (dBc)
Output Power (dBm)
Six-Carrier GSM vs Power Out
V
DD
= 30V, I
DQ
=1.85 A ƒ = 1842 MHz,
PAR = 7.1 dB
IM3 Up
IM3 Low
Efficiency
Efficiency
0
10
20
30
40
50
60
70
13
14
15
16
17
18
19
20
35 40 45 50 55
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Performance
Gain & Efficiency vs. Output Power
V
DD
= 30 V, I
DQ
= 1.85 A, ƒ = 1842 MHz
Efficiency
Gain
17.0
17.5
18.0
18.5
19.0
19.5
20.0
36 38 40 42 44 46 48 50 52 54
Power Gain (dB)
Output Power (dBm)
Power Sweep
V
DD
= 30 V, ƒ = 1842 MHz
1.45 A
1.65 A
1.85 A
2.05 A
2.25 A
Typical Performance (data taken in a production test fixture)
Data Sheet 4 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL
PTFB182503FL
0.1
0.3
0.5
0.2
0.4
2
0.1
0.3
0
.5
0.
7
0.2
0.4
0.6
0.1
0.3
0.5
0
.7
0
.9
0
.2
0.4
0
.6
0.
8
1
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
G
E
NE
R
AT
O
R
--->
0
.05
0
.35
0
.40
0
.45
0
.0
5
0
.1
0
0
.1
5
0
.4
5
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Nornalized to 50 Ohms
b182503-v1efl-v1
gb182503eflV1 July 29, 2009 6:57:48 PM
Z Load
1780 2.99 -2
1800 2.95 -2
1820 2.89 -2
1840 2.84 -1
1860 2.8 -1.
7
1880 2.78 -1
1900 2.74 -1
1920 2.72 -1
Z Source
1920 MHz
1780 MHz
Z0 = 50 W
10
20
30
40
50
-50
-40
-30
-20
-10
23 25 27 29 31 33
Supply Voltage (V)
Voltage Sweep
I
DQ
= 1850 mA, ƒ = 1842 MHz, tone spacing =
1 MHz, Output Power (PEP) = 53 dBm
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
3rd Order IMD (dBc)
15
25
35
45
55
65
14
15
16
17
18
19
0 40 80 120 160 200 240
Drain Efficiency (%)
Gain (dB)
Output Power (W)
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1850 mA, ƒ = 1842 MHz
Gain
T
CA S E
= 25°C
T
CA S E
= 90°C
Efficiency
Z Source Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
1780 2.99 –2.48 1.33 –0.49
1800 2.95 –2.30 1.33 –0.38
1820 2.89 –2.13 1.31 –0.27
1840 2.84 –1.96 1.29 –0.16
1860 2.80 –1.76 1.29 –0.02
1880 2.78 –1.58 1.28 0.10
1900 2.74 –1.39 1.29 0.23
1920 2.72 –1.21 1.29 0.36
Typical Performance (cont.)
PTFB182503EL
PTFB182503FL
Data Sheet 5 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL/FL_INPUT
RF_IN
In Out
NC NC
1
2 3
45
6 7
8
S3
TL130
R803
100 Ohm
R804
10 Ohm
R805
10 Ohm
C105
10 pF
TL102
TL126
TL101
TL104
1
2
3
4
TL105
TL106
TL107
R101
10 Ohm
R102
10 Ohm
1
2
3
TL108
12
3
TL109
1 2
3
TL110
TL111
TL112
TL113
TL114
TL115
TL116
TL117
TL118
TL119
TL120
TL121
TL122
TL123
TL124 TL125
C801
1000 pF
C802
1000 pF
C803
1000 pF
TL128
1 2
3
TL129
TL131
C106
10 pF
1
2
3
TL132
C102
4710000 pF
C103
4710000 pF
TL133
C104
0.3 pF
TL134
TL135
1
2
3
TL136
TL137
TL138
1
2
3
TL139
R801
1300 Ohm
R802
1200 Ohm
C101
7.5 pF
3
S1
S
C
B
E
1
2
3
4S2
TL127 TL103 GATE DUT
(Pin G)
b182503efl_bdin_08-17-2010
PTFB182503EL/FL_OUTPUT
TL201
TL202 TL203
TL204 TL205
TL206
TL207
VDD
TL208
TL209
TL210
1 2
3
TL211
1 2
3
TL212
1 2
3
TL213
TL214
C201
1000000 pF
C202
10000000 pF
TL215
C203
1000000 pF
C204
10000000 pF
12
3
TL216
12
3
TL217
12
3
TL218
TL219
TL220
TL221
TL222
TL223
C205
0.6 pF
C206
0.6 pF
C207
10000000 pF
1
2
3
TL224
C208
10000000 pF
1
2
3
TL225
TL226
C209
100000 pF
1 2
3
TL227
C210
100000 pF
12
3
TL228
TL229
TL230
TL231
1
2
3
4
TL232
TL233
TL234
TL235
DUT
(Pin V)
TL236
TL237
TL238
1
2
3
4
TL239 TL240
TL241
TL242
C211
0.9 pF
C212
0.9 pF
C213
2200000 pF
C214
10 pF
C215
2200000 pF
b182503efl_bdout_08-17-2010
DRAIN DUT
(Pin D)
DUT
(Pin V)
RF_OUT
VDD
Reference Circuit
Reference circuit input schematic for ƒ = 1880 MHz
Reference circuit output schematic for ƒ = 1880 MHz
e
r = 3.48
H = 30 mil
RO/RO4350B1
e
r = 3.48
H = 30 mil
RO/RO4350B1
Data Sheet 6 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL
PTFB182503FL
Reference Circuit (cont.)
Description
DUT PTFB182503EL or PTFB182503FL
PCB 0.76 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 1880 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101, TL117 0.022 λ, 78.27 W W = 0.762, L = 2.159 W = 30, L = 85
TL102 0.035 λ, 51.58 W W = 1.651, L = 3.358 W = 65, L = 132
TL103 0.050 λ, 9.67 W W = 13.970, L = 4.445 W = 550, L = 175
TL104 0.031 λ, 51.58 W W = 1.651, L = 3.018 W = 65, L = 119
TL105 W1 = 13.970, W2 = 0.762, W3 = 13.970, W1 = 550, W2 = 30, W3 = 550
W4 = 0.762 W4 = 30
TL106, TL107 W = 0.762 W = 30
TL108, TL136 0.010 λ, 68.02 W W1 = 1.016, W2 = 1.016, W3 = 1.016 W1 = 40, W2 = 40, W3 = 40
TL109, TL110, TL132, 0.010 λ, 78.27 W W1 = 0.762, W2 = 0.762, W3 = 1.016 W1 = 30, W2 = 30, W3 = 40
TL139
TL111 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80
TL112, TL134 0.014 λ, 38.82 W W = 2.540, L = 1.321 W = 100, L = 52
TL113 0.020 λ, 78.27 W W = 0.762, L = 2.007 W = 30, L = 79
TL114 0.099 λ, 92.53 W W = 0.508, L = 9.957 W = 20, L = 392
TL115 0.016 λ, 68.02 W W = 1.016, L = 1.524 W = 40, L = 60
TL116, TL137 0.017 λ, 78.27 W W = 0.762, L = 1.727 W = 30, L = 68
TL118, TL119 0.001 λ, 68.02 W W = 1.016, L = 0.127 W = 40, L = 5
TL120, TL121 0.013 λ, 78.27 W W = 0.762, L = 1.270 W = 30, L = 50
TL122 0.022 λ, 9.67 W W = 13.970, L = 1.981 W = 550, L = 78
TL123, TL124 0.007 λ, 68.02 W W = 1.016, L = 0.686 W = 40, L = 27
TL125, TL126 0.118 λ, 78.27 W W = 0.762, L = 11.684 W = 30, L = 460
TL127 0.008 λ, 45.17 W W = 2.032, L = 0.762 W = 80, L = 30
TL128 0.000 λ, 45.17 W W = 2.032, L = 0.025 W = 80, L = 1
TL129 0.023 λ, 9.67 W W1 = 13.970, W2 = 13.970, W3 = 2.032 W1 = 550, W2 = 550, W3 = 80
TL130 0.000 λ, 9.67 W W = 13.970, L = 0.025 W = 550, L = 1
TL131 (taper) 0.028 λ, 9.67 W / 51.58 W W1 = 13.970, W2 = 1.651, L = 2.515 W1 = 550, W2 = 65, L = 99
TL133 0.050 λ, 9.67 W W = 13.970, L = 4.470 W = 550, L = 176
TL135 0.015 λ, 68.02 W W = 1.016, L = 1.514 W = 40, L = 60
TL138 0.010 λ, 78.27 W W = 0.762, L = 0.991 W = 30, L = 39
table continued on page 7
PTFB182503EL
PTFB182503FL
Data Sheet 7 of 12 Rev. 07.1, 2013-08-06
Reference Circuit (cont.)
Electrical Characteristics at 1880 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201, TL219, TL220, W = 0.002, ANG = 90.000, R = 0.002 W = 2, ANG = 3543307, R = 70
TL222
TL202 W1 = 1.651, W2 = 2.032 W1 = 65, W2 = 80
TL203 0.012 λ, 51.58 W W = 1.651, L = 1.118 W = 65, L = 44
TL204 0.084 λ, 6.86 W W = 20.320, L = 7.366 W = 800, L = 290
TL205 0.011 λ, 45.17 W W = 2.032, L = 1.016 W = 80, L = 40
TL206 0.028 λ, 23.60 W W = 4.928, L = 2.540 W = 194, L = 100
TL207 0.028 λ, 23.79 W W = 4.877, L = 2.540 W = 192, L = 100
TL208 (taper) 0.018 λ, 6.86 W / 8.31 W W1 = 20.320, W2 = 16.510, L = 1.575 W1 = 800, W2 = 650, L = 62
TL209, TL210 0.076 λ, 34.08 W W = 3.048, L = 7.112 W = 120, L = 280
TL211, TL216, TL224, 0.032 λ, 34.08 W W1 = 3.048, W2 = 3.048, W3 = 3.048 W1 = 120, W2 = 120, W3 = 120
TL225
TL212, TL228, TL217, 0.024 λ, 34.08 W W1 = 3.048, W2 = 3.048, W3 = 2.286 W1 = 120, W2 = 120, W3 = 90
TL218, TL227
TL213 0.008 λ, 34.08 W W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30
TL214, TL215 0.051 λ, 34.08 W W = 3.048, L = 4.826 W = 120, L = 190
TL221, TL242 0.013 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50
TL223 (taper) 0.018 λ, 19.45 W / 51.58 W W1 = 6.248, W2 = 1.651, L = 1.651 W1 = 246, W2 = 65, L = 65
TL226 W1 = 12.700, W2 = 17.780 W1 = 500, W2 = 700
TL229, TL230 0.000 λ, 19.45 W W = 6.248, L = 0.025 W = 246, L = 1
TL231 (taper) 0.038 λ, 8.31 W / 19.45 W W1 = 16.510, W2 = 6.248, L = 3.378 W1 = 650, W2 = 246, L = 133
TL232 W1 = 6.248, W2 = 0.025 , W3 = 6.248, W1 = 246, W2 = 1, W3 = 246,
W4 = 0.025 W4 = 1
TL233, TL234, TL237, 0.000 λ, 146.88 W W = 0.025, L = 0.025 W = 1, L = 1
TL238
TL235 0.005 λ, 51.58 W W = 1.651, L = 0.508 W = 65, L = 20
TL236 0.000 λ, 8.31 W W = 16.510, L = 0.025 W = 650, L = 1
TL239 W1 = 20.320, W2 = 0.025, W3 = 20.320 W1 = 800, W2 = 1, W3 = 800,
W4 = 0.025 W4 = 1
TL240, TL241 0.000 λ, 6.86 W W = 20.320, L = 0.025 W = 800, L = 1
Data Sheet 8 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL
PTFB182503FL
b182503efl_CD_08-17-2010
PTFB182503_OUT_02
PTFB182503_IN_02
RO4350, .030 (60) RO4350, .030 (60)
+
10 µF
+
+
C802C803
R803 R801
R802
R101
C101
C103 C104
C105
C102
C106
R102
R805
R804
C201
C202
C203
C204
C205
C206
C207
C208
C209
C210
C211
C212
C213
C214
C215
C801
RF_IN RF_OUT
VDD
VDD
VDD
S3
S1
S2
10 µF
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFB182503EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
PTFB182503EL
PTFB182503FL
Data Sheet 9 of 12 Rev. 07.1, 2013-08-06
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N
Input
C101 Chip capacitor, 7.5 pF ATC ATC100B7R5BW500XB
C102, C103 Chip capacitor, 4.71 µF ATC 493-2372-2-ND
C104 Chip capacitor, 0.3 pF ATC ATC100A0R3BW150XB
C105, C106 Chip capacitor, 10 pF ATC ATC100A100FW150XB
C801, C802, C803 Capacitor, 1000 pF Digi-Key PCC1772CT-ND
R101, R102, R804, R805 Resistor, 10 W Digi-Key P10ECT-ND
R801 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R802 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R803 Resistor, 100 W Digi-Key P100ECT-ND
S1 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S2 Transistor Digi-Key BCP5616TA-ND
S3 Voltage Regulator Digi-Key LM78L05ACM-ND
Output
C201, C203 Chip capacitor, 0.1 µF Digi-Key 445-1411-2-ND
C202, C204 Capacitor, 10 µF Garrett Electronics 281M5002106K
C205, C206 Chip capacitor, 0.6 pF ATC ATC100B0R6BW500XB
C207, C208 Chip capacitor, 10 µF Digi-Key 587-1818-2-ND
C209, C210 Chip capacitor, 0.1 µF Digi-Key 399-1267-2-ND
C211, C212 Chip capacitor, 0.9 pF ATC ATC100B0R9BW500XB
C213, C215 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C214 Chip capacitor, 10 pF ATC ATC100B100FW500XB
Data Sheet 10 of 12 Rev. 07.1, 2013-08-06
PTFB182503EL
PTFB182503FL
Package Outline Specifications
Package H-33288-6
H-33288-6_po_01_10-03-2012
22.352±.200
[.880±.008]
34.036
[1.340]
L
C
1.016
[.040]
1.575
[.062] (SPH)
4.039+.254
-.127
[.159+.010
-.005 ]
D
G
VV
FE
L
C
19.558±.510
[.770±.020]
9.779
[.385]
9.398
[.370]
L
C
2X 12.700
[.500]
4X 30°
2X 22.860
[.900] 27.940
[1.100]
2X R1.626
[R.064]
45° X 2.032
[45° X .080]
4.889±.510
[.192±.020]
4X 1.143
[.045] (4 PLS)
2X 5.080
[.200] (2 PLS)
4X R1.524
[R.060]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [0.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – VDD; E, F – N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [0.004 + 0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
PTFB182503EL
PTFB182503FL
Data Sheet 11 of 12 Rev. 07.1, 2013-08-06
Package Outline Specifications (cont.)
Package H-34288-4/2
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Diagram
Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [0.005] unless specified otherwise.
4. Pins: D – drain; G – gate; S – source; V – VDD
5. Lead thickness: 0.10 + 0.051/–0.025 mm [0.004 + 0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
23.114
[.910]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039+.254
-.127
[.159+.010
-.005 ]
S
L
C
H-34288-4/2_po_03_08-13-2012
L
C
D
G
C
L19.558±.510
[.770±.020]
2X 12.700
[.500]
45° X 2.032
[45° X .080]
2X 1.143
[.045]
9.398
[.370]
9.779
[.385]
22.860
[.900]
2X 5.080
[.200]
4.889±.510
[.192±.020]
VV
2X 30°
4X R0.508 +.381
-.127
[R.020+.015
-.005 ]
Data Sheet 12 of 12 Rev. 07.1, 2013-08-06
Edition 2013-08-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
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PTFB182503EL V1 / PTFB182503FL V2
Revision History: 2013-08-06 Data Sheet
Previous Version: 2012-10-03, Data Sheet
Page Subjects (major changes since last revision)
2 Added operating voltage in Maximum Ratings table