1. Product profile
1.1 General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using T rench MOSFET
technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protection
1.3 Applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX7002AKS
60 V, dual N-channel Trench MOSFET
Rev. 1 — 1 March 2012 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VDS drain-source voltage Tj=25°C --60V
VGS gate-source voltage -20 - 20 V
IDdrain current VGS =10V; T
amb =25°C [1] - - 170 mA
Static characteristics
RDSon drain-source on-state
resistance VGS =10V; I
D=100mA; T
j=25°C - 3 4.5 Ω
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 2 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = placeholder for manufacturing site code
Tabl e 2. Pinning info rmation
Pin Symbol Description Simplified outline Graphic sym bol
1S1source TR1
SOT363 (TSSOP6)
2 G1 gate TR1
3D2drain TR2
4S2source TR2
5 G2 gate TR2
6D1drain TR1
132
4
56
017aaa256
D1
S1
G1
D2
S2
G2
Table 3. Ordering informatio n
Type number Package
Name Description Version
NX7002AKS TSSOP6 plastic surface-mounted package; 6 leads SOT363
Table 4. Marking codes
Type number Marking code[1]
NX7002AKS TD%
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 3 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VDS drain-source voltage Tj=25°C - 60 V
VGS gate-source voltage -20 20 V
IDdrain current VGS =10V; T
amb =25°C [1] - 170 mA
VGS =10V; T
amb = 100 °C [1] - 100 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 680 mA
Ptot total power dissipation Tamb =25°C [2] - 220 mW
[1] - 255 mW
Tsp = 25 °C - 1060 mW
Source-drain diode
ISsource current Tamb =25°C [1] - 170 mA
Per device
Ptot total power dissipation Tamb =25°C [2] - 330 mW
Tjjunction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Fig 1. Normalized total power dissipation as a
function of junction temp era tu re Fig 2. Normalized continuous drain current as a
function of junction temp erat ure
Tj (°C)
−75 17512525 75−25
017aaa123
40
80
120
Pder
(%)
0
Tj (°C)
−75 17512525 75−25
017aaa124
40
80
120
Ider
(%)
0
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 4 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
IDM = single pul se
(1) tp= 100 µs
(2) tp= 1 ms
(3) tp= 10 ms
(4) DC; Tsp = 25 °C
(5) tp= 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
017aaa479
VDS (V)
10-1 102
101
10-1
10-2
1
ID
(A)
10-3
Limit RDSon = VDS/ID
(1)
(2)
(3)
(4)
(5)
(6)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 500 560 K/W
[2] - 450 480 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
--115K/W
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 5 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa480
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
0
017aaa481
10
1
102
103
Zth(j-a)
(K/W)
10-1
10-5 1010-2
10-4 102
10-1
tp (s)
10-3 103
1
duty cycle = 1
0.75 0.5
0.33 0.25
0.2
0.1
0.05
0.02
0.01
0
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 6 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=250µA; V
GS =0V; T
j=25°C 60--V
VGSth gate-source threshold
voltage ID=250µA; V
DS =V
GS; Tj= 25 °C 1.1 1.6 2.1 V
IDSS drain leakage current VDS =60V; V
GS =0V; T
j=25°C --1µA
VDS =60V; V
GS =0V; T
j=150°C --10µA
IGSS gate leakage current VGS =20V; V
DS =0V; T
j=25°C --2µA
VGS =-20V; V
DS =0V; T
j=25°C --2µA
VGS =10V; V
DS =0V; T
j=25°C --0.5µA
VGS =-10V; V
DS =0V; T
j=25°C --0.5µA
VGS =5V; V
DS =0V; T
j= 25 °C - - 100 nA
VGS =-5V; V
DS =0V; T
j= 25 °C - - 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D=100mA; T
j=25°C - 3 4.5 Ω
VGS =10V; I
D=100mA; T
j= 150 °C - 6.2 9.2 Ω
VGS =5V; I
D= 100 mA; Tj=25°C - 3.7 5.2 Ω
gfs forward
transconductance VDS =10V; I
D= 200 mA; Tj= 25 °C - 230 - mS
Dynamic characteristics
QG(tot) total gate charge VDS =30V; I
D= 200 mA; VGS =4.5V;
Tj=25°C - 0.33 0.43 nC
QGS gate-source charge - 0.12 - nC
QGD gate-drain charge - 0.09 - nC
Ciss input capacitance VDS =10V; f=1MHz; V
GS =0V;
Tj=25°C -1117pF
Coss output capacitance - 3.4 - pF
Crss reverse transfer
capacitance -1.4-pF
td(on) turn-on delay time VDS =40V; R
L= 250 Ω; VGS =10V;
RG(ext) =6Ω; Tj=25°C - 6 12 ns
trrise time - 7 - ns
td(off) turn-off delay time - 20 40 ns
tffall time - 14 - ns
Source-drain diode
VSD source-drain voltage IS=115mA; V
GS =0V; T
j= 25 °C 0.47 0.7 1.2 V
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 7 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
Tj= 25 °C Tj= 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Outp ut characteristics: drain current as a
function of drain-source voltage; typical values Fig 7. Subthreshold drain current as a function of
gate-source voltage
Tj= 25 °C ID= 0.2 A
(1) Tj= 150 °C
(2) Tj= 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
VDS (V)
04312
017aaa469
0.10
0.05
0.15
0.20
ID
(A)
0
10 V 5 V
3.5 V VGS = 3 V
2.5 V
2 V
017aaa470
VGS (V)
0321
10-4
10-5
10-3
ID
(A)
10-6
(1) (2) (3)
ID (A)
0 0.200.150.05 0.10
017aaa471
4
6
2
8
10
RDSon
(Ω)
0
2.5 V 3.0 V
3.5 V
4.0 V
5.0 V
10 V
VGS (V)
0108462
017aaa472
4
8
12
RDSon
(Ω)
0
(1)
(2)
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 8 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
VDS > ID× RDSon
(1) Tj = 25 °C
(2) Tj= 150 °C
Fig 10. Transfer characteristics: drain curre nt as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as
a function of junctio n temperature; typical
values
ID= 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
junction temperature Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
VGS (V)
054231
017aaa473
0.10
0.05
0.15
0.20
ID
(A)
0
(1)
(1)
(2)
(2)
Tj (°C)
-60 180120060
017aaa474
1.0
0.5
1.5
2.0
a
0
Tj (°C)
-60 180120060
017aaa475
1.0
.1.5
0.5
2.0
2.5
VGS(th)
(V)
0
(1)
(2)
(3)
VDS (V)
10-1 102
101
017aaa476
10
1
102
C
(pF)
10-1
(1)
(2)
(3)
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 9 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
ID= 0.2 A; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values Fig 15. Gate charge waveform definitions
VGS = 0 V
(1) Tj= 150 °C
(2) Tj= 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
QG (nC)
0 0.80.60.2 0.4
017aaa477
4
6
2
8
10
VGS
(V)
0
017aaa137
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
VGS(pl)
017aaa478
VSD (V)
0 1.20.80.4
0.10
0.05
0.15
0.20
IS
(A)
0
(1) (2)
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 10 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
8. Test information
9. Package outline
Fig 17. Duty cycle definitio n
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
Fig 18. Package outline SOT363 (TSSOP6)
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0 1.35
1.15
2.2
1.8 1.1
0.8
0.45
0.15
132
465
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 11 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprint for SOT363 (TSSOP6)
Fig 20. Wave soldering footprint for SOT363 (TSSOP6)
sot363_fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 12 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
NX7002AKS v.1 20120301 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 13 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The p r oduct status of device(s) des cribed in this document may have changed since this document was publis hed and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nexperia.com.
12.2 Definitions
Preview— The document is a preview version only. The document is still
subject to formal approval, which may result in modificati ons or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of informati on included herein and shall have
no liability for the consequences of use of such info rmation.
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or comple teness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data s heet— A short data sheet is an extract from a full dat a sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and sh ould not be re lied upon to co ntain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local Nexperia sales office.
In case of any inconsistency or conflict with th e short data sheet, the full data
sheet shall prevail.
Product specifica t io n— The information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
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Limited warr a nty and liability— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
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Notwithstanding any damages that customer might incur for any reason
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Right to make changes— Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
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Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
© Nexperia B.V. 2017. All rights reserved
NX7002AKS All information provided in this document is subject to legal disclaimers.
Product data sheet Rev. 1 — 1 March 2012 14 of 15
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
Terms and conditions of commercial sale— Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
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Export control— This document as well as the item(s) described her ein may
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Non-automotive qualified products— Unless this data sheet expressly
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the product is not suitable for automotive use. It i s neit her qua lified nor tested
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In the event that customer uses the product for design-in and use in
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Translations— A non-English (translated) version of a document is for
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
13. Contact information
For more information, please visit:http://www.nexperia.com
For sales office addresses, please send an email to:salesaddresses@nexperia.com
Nexperia NX7002AKS
60 V, dual N-channel Trench MOSFET
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . .10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
13 Contact information. . . . . . . . . . . . . . . . . . . . . .14
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
01 March 2012