(2/5 110 93 0 .2 5 4 - O6.5 2 -M8 4 (C) 1 20 20 62 0 .2 5 1 2 80 (E) 2 (G) 3 3 13 21 - 0.5 36 +1.0 - 0.5 25.5 +1.0 2 -M4 29 LABEL 7 23 (E) 4 Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to erminals , . (kgfcm) .. . ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 800A,= 15V . . ate-mitter hreshold oltage = 5V,= 800mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime = 10V,= 0V,= 1MH 50,400 = 600V L= 0.75 G= 2.0 = 15V . . . . . . . . orward urrent eak orward oltage everse ecovery ime . . . = 800A,= 0V . . = 800A,= -10V i/t= 1600A/s . . hermal mpedance iode th(j-c) Junction to Case . . . . 00 http://store.iiic.cc/ (3/5 Fig.1- Output Characteristics (Typical) 12V VGE=20V 1400 VGE=20V 11V 1400 15V 1200 10V 1000 800 9V 600 400 8V 200 0 1 2 3 4 10V 1000 800 9V 600 8V 400 7V 200 0 5 0 1 Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 800A 12 10 8 6 4 2 12 16 800A 12 10 8 6 4 2 0 20 0 4 8 300000 14 100000 12 500 10 8 VCE =600V 6 400V 200 4 200V 100 0 0 1000 2000 3000 4000 20 5000 VGE=0V f=1MHZ T C=25C Cies Capacitance C (pF) 600 300 16 Fig.6- Capacitance vs. Collector to Emitter Voltage (Typical) 16 Gate to Emitter Voltage VGE (V) Collector to Emitter Voltage V CE (V) RL =0.75( TC=25C 400 12 Gate to Emitter Voltage VGE (V) Fig.5- Gate Charge vs. Collector to Emitter Voltage (Typical) 700 1600A 14 Gate to Emitter Voltage VGE (V) 800 5 T C=125C IC=400A 1600A 8 4 16 14 4 3 Fig.4- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) T C=25C 16 0 2 Collector to Emitter Voltage VCE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 0 11V 15V Collector to Emitter Voltage VCE (V) IC=400A 12V 1200 7V 0 T C=125C 1600 Collector Current I C (A) Collector Current I C (A) Fig.2- Output Characteristics (Typical) T C=25C 1600 30000 Coes 10000 3000 Cres 1000 2 300 0 6000 100 0.1 0.2 Total Gate Charge Qg (nC) 0.5 1 2 5 10 20 50 100 200 Collector to Emitter Voltage VCE (V) 00 http://store.iiic.cc/ (4/5 Fig.8- Series Gate Impedance vs. Switching Time (Typical) Fig.7- Collector Current vs. Switching Time (Typical) 5 2 VCC=600V RG=2.0( VGE=15V T C=25C Resistive Load Switching Time t (s) Switching Time t (s) 1.6 tOFF 1.2 0.8 tf 0 tr(VCE) 0 200 400 600 1 toff ton 0.03 800 tr (V CE) 1 3 Fig.9- Collector Current vs. Switching Time 1 tf tON 0.3 tr(Ic) 0.1 2 0.03 0.01 VCC=600V IC=800A VGE=15V T C=125C Inductive Load 5 Switching Time t (s) Switching Time t (s) tOFF 1 toff 0.5 ton 0.2 tf 0.1 tr(IC ) 0.05 0 200 400 600 800 0.02 1000 1 3 Collector Current IC (A) 10 30 Series Gate Impedance RG (( ) Fig.11- Collector Current vs. Switching Loss Fig.12- Series Gate Impedance vs. Switching Loss 3000 VCC=600V RG=2.0( VGE=15V T C=125C Inductive Load 200 Switching Loss ESW (mJ/Pulse) 250 Switching Loss ESW (mJ/Pulse) 30 Fig.10- Series Gate Impedance vs. Switching Time 10 VCC=600V RG=2.0( VGE=15V T C=125C Inductive Load 3 10 Series Gate Impedance RG (( ) Collector Current IC (A) 10 tf 0.3 0.1 tON 0.4 VCC=600V IC=800A VGE=15V T C=25C Resistive Load 3 EON 150 EOFF 100 ERR 50 VCC=600V IC=800A VGE=15V T C=125C Inductive Load 1000 EON 300 EOFF 100 ERR 30 10 0 0 200 400 600 800 1000 1200 1 3 10 30 Series Gate Impedance RG (() Collector Current IC (A) 00 http://store.iiic.cc/ (5/5 Fig.13- Forward Characteristics of Free Wheeling Diode (Typical) Fig.14- Reverse Recovery Characteristics (Typical) 1000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) 1600 T C=25C 1200 T C=125C 1000 800 600 400 200 0 1 2 3 IF=800A T C=25C T C=125C trr 300 IRrM 100 30 4 0 Forward Voltage VF (V) 800 1600 2400 3200 4000 4800 5600 -di/dt (A/s) Fig.15- Reverse Bias Safe Operating Area 5000 3000 RG=2.0( , VGE=15V, T C=125C 1000 Collector Current I C (A) 0 300 100 30 10 3 1 0.3 0.1 0 200 400 600 800 1000 1200 1400 Collector to Emitter Voltage V CE (V) Fig.16- Transient Thermal Impedance 3x10 -1 Transient Thermal Impedance Rth (J-C) (C/W) Forward Current I F (A) 1400 1x10 -1 FRD IGBT 3x10 -2 1x10 -2 3x10 -3 1x10 -3 T C=25C 3x10 -4 1x10 -4 10 -5 1 Shot Pulse 10-4 10-3 10 -2 10 -1 1 10 1 Time t (s) 00 http://store.iiic.cc/