NPN Medium Power Silicon Transistor
Rev. V2
2N3418(S) - 2N3421(S) Series
1
1
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1
Features
• Available in JAN, JANTX, JANTXV, JANS and
JANSR 100K rads(Si) per MIL-PRF-19500/393
• TO-5 & TO-39 (TO-205AD) Package
Electrical Characteristics
Parameter Test Conditions Symbol Units Min. Max.
Off Characteristics
Collector - Emitter Breakdown Voltage
IC = 50 mAdc
2N3418, S, 2N3420, S
2N3419, S, 2N3421, S
V(BR)CEO Vdc
60
80
—
Collector - Emitter Cutoff Current
VCE = 80 Vdc, VBE = -0.5 Vdc
2N3418, S, 2N3420, S
VCE = 120 Vdc, VBE = -0.5 Vdc
2N3419, S, 2N3421, S
ICEX µAdc —
0.3
0.3
Collector - Emitter Cutoff Current
VCE = 45
2N3418, S, 2N3420, S
VCE = 60
2N3419, S, 2N3421, S
ICEO µAdc —
5.0
5.0
Emitter - Base Cutoff Current VEB = 6 Vdc, IC = 0
VEB = 8 Vdc, IC = 0 IEBO µAdc — 0.5
10.0
On Characteristics1
Forward Current Transfer Ratio
IC = 100 mAdc, VCE = 2 Vdc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 1 Adc, VCE = 2 Vd
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 2 Adc, VCE = 2 Vdc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
IC = 5 Adc, VCE = 5 Vdc
2N3418, S, 2N3419, S
2N3420, S, 2N3421, S
HFE -
20
40
20
40
15
30
10
15
—
—
60
120
—
—
—
—
Base - Emitter Voltage IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc VBE(SAT) Vdc 0.6
0.7
1.2
1.4
Collector - Emitter Saturation Voltage IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc VCE(SAT) Vdc — 0.25
0.50
NPN Medium Power Silicon Transistor
Rev. V2
2N3418(S) - 2N3421(S) Series
2
2
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2
Parameter Test Conditions Symbol Units Min. Max.
Dynamic Characteristics
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio IC = 0.1 Adc, VCE= 10 Vdc, f = 20 MHz | HFE | - 1.3 8.0
Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO pF — 150
Switching Characteristics
Delay Time
Rise Time
VBE (OFF) = -3.7 Vdc;
IC = 1 Adc; IB2 = 100 mAdc
TD
TR µs — 0.08
0.22
Storage Time
Fall Time
VBE (OFF) = -3.7 Vdc;
IC = 1 Adc; IB2 = 100 mAdc
TS
TF µs — 1.10
0.20
Safe Operating Area
DC Tests: TC = +100 °C, I Cycle, t = 1.0 s
Test 1: VCE = 5 Vdc, IC = 3.0 Adc
Test 2: VCE = 37 Vdc, IC = 0.4 Adc
Test 3: VCE = 60 Vdc, IC = 0.185 mAdc 2N3418, S; 2N3420, S
VCE = 80 Vdc, IC = 0.120 mAdc 2N3419, S; 2N3421, S
Electrical Characteristics
Absolute Maximum Ratings
Ratings Symbol
Value
2N3418, S
2N3420, S
Value
2N3419, S
2N3421, S
Collector - Emitter Voltage VCEO 60 Vdc 80 Vdc
Collector - Base Voltage VCBO 85 Vdc 125 Vdc
Emitter - Base Voltage VEBO 8 Vdc
Collector Current
TP ≤ 1 ms, duty cycle ≤ 50% IC 3 Adc
5 Adc
Total Power Dissipation
@ TA = 25°C
@ TC = 100°C
PT 1 W
5 W
Operating & Storage Temperature Range TOP, TSTG -65°C to +200°C
NPN Medium Power Silicon Transistor
Rev. V2
2N3418(S) - 2N3421(S) Series
3
3
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3
Outline Drawing (TO-5 & TO-39)
LTR
Dimensions
Note Inches Millimeters
MIN MAX MIN MAX
CD 0.305 0.335 7.75 8.51 —
CH 0.240 0.260 6.10 6.60 —
HD 0.335 0.370 8.51 9.40 —
LC 0.200 TP 5.08 TP 7
LD 0.016 0.019 0.041 0.048 8, 9
LL 0.500 0.750 12.7 19.05 —
LU 0.016 0.019 0.041 0.048 8, 9
L1 — 0.050 — 1.27 8, 9
L2 0.250 — 6.35 — 8, 9
P 0.100 — 2.54 — 7
Q — 0.030 — 0.76 5
TL 0.029 0.045 0.74 1.14 —
TW 0.028 0.034 0.71 0.86 —
r — 0.010 — 0.25 10
a 45° TP 45° TP 7
1, 2, 10, 12, 13, 14
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by
gauging procedure.
8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL
minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Фx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39),
dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max.
NPN Medium Power Silicon Transistor
Rev. V2
2N3418(S) - 2N3421(S) Series
4
4
VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.vptcomponents.com for additional data sheets and product information.
For further information and support please visit:
www.vptcomponents.com
4
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