Rev.2.00 Sep 07, 2005 page 1 of 7
2SK1313(L), 2SK1313(S)
2SK1314(L), 2SK1314(S)
Silicon N Channel MOS FET REJ03G0927-0200
(Previous: ADE-208-12 66)
Rev.2.00
Sep 07, 2005
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary br eakdown
• Suitable for sw i t c hi ng regulator and DC - DC con verter
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK1313(L), 2SK1313(S), 2SK1314 (L), 2SK1 314(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
2SK1313 450 Drain to source voltage 2SK1314 VDSS 500 V
Gate to source voltage VGSS ±30 V
Drain current ID 5 A
Drain peak current ID(pulse)*1 20 A
Body to drain diode reverse drain current IDR 5 A
Channel dissipation Pch*2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
2SK1313 450
Drain to source
breakdown voltage 2SK1314 V(BR)DSS 500 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0
2SK1313 VDS = 360 V, VGS = 0
Zero gate voltage drain
current 2SK1314 IDSS — — 250 µA VDS = 400 V, VGS = 0
Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V
2SK1313 — 1.0 1.4
Static drain to source on
state resistance 2SK1314 RDS(on) — 1.2 1.5 Ω I
D = 2.5 A, VGS = 10 V *3
Forward transfer admittance |yfs| 2.5 4.0 — S ID = 2.5 A, VDS = 10 V *3
Input capacitance Ciss — 640 — pF
Output capacitance Coss — 160 — pF
Reverse transfer capacitance Crss — 20 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 10 — ns
Rise time tr — 25 — ns
Turn-off delay time td(off) — 50 — ns
Fall time tf — 30 — ns
ID = 2.5 A, VGS = 10 V,
RL = 12 Ω
Body to drain diode forward v oltage VDF — 0.95 — V IF = 5 A, VGS = 0
Body to drain diode reverse recover y
time trr — 300 — ns
IF = 5 A, VGS = 0,
diF/dt = 100 A/µs
Note: 3. Pulse test
2SK1313(L), 2SK1313(S), 2SK1314 (L), 2SK1 314(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
50
10
1.0
0.05
10 100 1,000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
20
2
0.2
1 3 30 300
Ta = 25°C2SK1313
2SK1314
10 µs
100 µs
1 ms
DC Operation (T
C
= 25
°
C)
PW = 10 ms (1 shot)
Operation in this Area
is Limited by R
DS (on)
5
0.5
0.1
10
20 50
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
8
2
10 30 400
4
6
5.0 V
4.5 V
V
GS
= 4 V
5.5 V
6 V
10 V Pulse Test 10
410
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
8
2
268
–25°C
0
4
6
V
DS
= 20 V
Pulse Test
75°C
T
C
= 25°C
10
820
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage V
DS
(on) (V)
8
2
412160
4
6
I
D
= 1 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2 A
Pulse Test
5 A
10
250
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
5
0.1
1.0 5 200.5
1.0
2
Static Drain to Source on State
Resistance vs. Drain Current
V
GS
= 10 V
Pulse Test
0.2
10
15 V
0.5
60
40
20
0 50 100 150
Case Temperature T
C
(°C)
Channel Dissipation Pch (W)
Power vs. Temperature Derating
2SK1313(L), 2SK1313(S), 2SK1314 (L), 2SK1 314(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
5
40 160
Case Temperature T
C
(°C)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
4
1
0 80 120
0
2
3
Static Drain to Source on State
Resistance vs. Temperature
V
GS
= 10 V
Pulse Test
1 A
I
D
= 5 A
–40
2 A
10
0.2 5
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
5
0.5
0.1 0.5 2
0.1
1.0
2
Forward Transfer Admittance
vs. Drain Current
–25°C
V
DS
= 20 V
Pulse Test
0.05
0.2
1.0
T
C
= 25°C
75°C
5,000
0.5
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
2,000
200
0.2 1.0 10
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
0.1
100
5
di/dt = 100 A/µs, Ta = 25°C
V
GS
= 0
Pulse Test
2
1,000
20 50
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
10
10 30 40
1
100
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
0
Ciss
Coss
Crss
500
16 40
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
400
100
824320
200
300
V
DS
100 V
20
16
4
0
8
12
V
DD
= 100 V
250 V
400 V
I
D
= 5 A
250 V
V
DD
= 400 V
V
GS
Gate to Source Voltage V
GS
(V)
0.5 1
0
Drain Current I
D
(A)
Switching Time t (ns)
500
50
0.2 1.0 5
10
100
200
V
GS
= 10 V V
DD
= 30 V
PW = 2 µs, duty < 1%
0.1
20
2
Switching Characteristics
t
f
5
t
d (on)
t
r
t
d (off)
•
•
2SK1313(L), 2SK1313(S), 2SK1314 (L), 2SK1 314(S)
Rev.2.00 Sep 07, 2005 page 5 of 7
10
0.8 2.0
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
8
0.4 1.2 1.6
4
6
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
0
25, 10 V
V
GS
= 0, –10 V
3
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ
S
(t)
1.0
0.1
0.3
D = 1
10 µ
0.03
0.01
100 µ10 m 100 m 1 101 m
T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
T
PW
P
DM
D = T
PW
θch–c (t) = γ
S
(t) • θch–c
θch–c = 2.50°C/W, T
C
= 25°C
Normalized Transient Thermal Impedance vs. Pulse Width
Vin Monitor
Vout Monitor
R
L
50 Ω
Vin = 10 V
D.U.T
.
V
DD
= 30 V
.
Switching Time Test Circuit
Vin 10 %
90 %
90 %
90 %
10 %
td (on) td (off)
trtf
Vout 10 %
Waveforms
2SK1313(L), 2SK1313(S), 2SK1314 (L), 2SK1 314(S)
Rev.2.00 Sep 07, 2005 page 6 of 7
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK1313(L), 2SK1313(S), 2SK1314 (L), 2SK1 314(S)
Rev.2.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK1313L-E 500 pcs Box (Sack)
2SK1313STL-E 1000 pcs Taping
2SK1314L-E 500 pcs Box (Sack)
2SK1314STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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