Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DATA SH EET
Product data sheet
Supersedes data of 1997 Jul 09
1999 Apr 26
DISCRETE SEMICONDUCTORS
BC857BS
PNP general purpose double
transistor
handbook, halfpage
MBD128
1999 Apr 26 2
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BS
FEATURES
•Low collector capacitance
•Low collector-emitter saturation voltage
•Closely matched current gain
•Reduces number of c omp onents and boardspace
•No mutual interference between the transistors.
APPLICATIONS
•General purpose switc hing and amplification.
DESCRIPTION
PNP double transist or in an SC-88; SOT363 plastic
package. NPN complement: BC847BS.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BC857BS 3Ft
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
Fig.1 Simplified outline (SC-88; SOT363)
and symbol.
handbook, halfpage
132
4
56
Top view
MAM339
132
TR1 TR2
6
4
5
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
VCBO collector-base volt a ge open emitter − −50 V
VCEO collector-emitter voltage open base − −45 V
VEBO emitter-base voltage open collector − −5 V
ICcollector current (DC) − −100 mA
ICM peak collector current − −200 mA
IBM peak base current − −200 mA
Ptot total power dissipation Tamb ≤ 25 °C−200 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
Per device
Ptot total power dissipation Tamb ≤ 25 °C; note 1 −300 mW
1999 Apr 26 3
NXP Semiconductors Pr oduct dat a shee t
PNP general purpose double transistor BC857BS
THERMAL CHARACTE RISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
Rth j-a thermal resistance from junction to ambient note 1 416 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor
ICBO collector cut-off current IE = 0; VCB = −30 V −−−15 nA
IE = 0; VCB = −30 V; Tj = 150 °C−−−5μA
IEBO emitter cut-off current IC = 0; VEB = −5 V −−−100 nA
hFE DC current gain IC = −2 mA; VCE = −5 V 200 −450
VCEsat collector-emitter saturation
voltage IC = −10 mA; IB = −0.5 mA −−−100 mV
IC = −100 mA; IB = −5 mA; note 1 −−−400 mV
VBEsat base-emitt er saturation voltage IC = −10 mA; IB = −0.5 mA − −755 −mV
VBE base-emitter vo ltage IC = 2 mA; VCE = −5 V −600 −655 −750 mV
Cccollector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz −−2.2 pF
Ceemitter cap a citance IC = ic = 0; VEB = −500 mV; f = 1 MHz −10 −pF
fTtransition freque ncy IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − − MHz
1999 Apr 26 4
NXP Semiconductors Pr oduct dat a shee t
PNP general purpose double transistor BC857BS
handbook, full pagewidth
0
300
200
100
400
MBH727
−10
−2
−10
−1
hFE
−1IC (mA)
−10 −10
3
−10
2
VCE = −5 V
Fig.2 DC current gain; typical values
1999 Apr 26 5
NXP Semiconductors Pr oduct dat a shee t
PNP general purpose double transistor BC857BS
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT363 SC-88
wB
M
bp
D
e1
e
pin 1
index A
A1
Lp
Q
detail X
HE
E
v
M
A
AB
y
0 1 2 mm
scale
c
X
132
4
56
Plastic surface mounted package; 6 leads SOT363
UNIT A1
max bpcDEe
1
HELpQywv
mm 0.1 0.30
0.20 2.2
1.8
0.25
0.10 1.35
1.15 0.65
e
1.3 2.2
2.0 0.2 0.10.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15 0.25
0.15
A
1.1
0.8
97-02-28
1999 Apr 26 6
NXP Semiconductors Product data sheet
PNP general purpose double transistor BC857BS
DATA SHEET STATUS
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product s ta tus of device(s ) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production T his document contains the product specification.
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable . H ow ev er, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequenc es of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this doc ument, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, au thorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in pe rs onal injury, death or seve re
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefor e s uc h inclusion and/or use is at
the customer’s own risk .
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use witho ut fu rth e r testing or modificat ion.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any incons istency or conflict betw een information
in this document an d such terms and conditio ns, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for accept ance or the grant, c onveyance or
implication of any license under any copyrights, patents or
other industr i al or inte llectual property ri gh ts.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national author ities.
Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
Characteristics sections of this docu ment, and as such is
not complete, exhaus tive or legally binding.
NXP Semiconductors
Contact information
For additional information p lease visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form par t o f an y q uotation or cont ra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be change d
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 115002/00/02/pp7 Date of releas e: 1999 Apr 26 Document order number: 9397 750 05804
