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QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 1
September 2016
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR
Surface-Mount Silicon Pin Photodiode
Features
• Daylight Filter (QSB34GR and QSB34ZR Only)
• Surface-Mount Packages:
– QSB34GR / QSB34CGR for Over-Mount Board
– QSB34ZR / QSB34CZR for Under-Mount Board
• Fast PIN Photodiode
• Wide Reception Angle: 120°
• Large Chip Size: 3 mm x 3 mm
• Sensitive Area: 2.55 mm x 2.55 mm
• High Sensitivity
• Low Capacitance
• Available in 0.470 inch (12 mm) Width Tape on
7 inch (178 mm) Diameter Reel: 1,000 Units per Reel
Ordering Information
Part Number Operating Temperature Package Packing Method
QSB34GR
-25 to +85°C PLCC 2L Tape and Reel
QSB34ZR
QSB34CGR
QSB34CZR
Schematic
ANODE
CATHODE
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise specified.
Note:
1. Soldering time ≤ 5 s.
Recommend IR Reflow Soldering Profile
Symbol Parameter Min. Unit
TOPR Operating Temperature -25 to +85
°CTSTG Storage Temperature -40 to + 85
TSOL(1) Soldering Temperature 260
VRReverse Voltage 32 V
PC
Power Dissipation at (or below) 25°C
Free Air Temperature 150 mW
1 ~ 3°C/s
Pre-heating
180 ~ 200°C
260°C Max.
120 s Max.
60 s Max.
Above 220°C
10 s Max.
1 ~ 3°C/s
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 3
Electrical / Optical Characteristics
Values are at TA = 25°C unless specified otherwise.
Symbol Parameter Test Conditions Min. Typ. Max. Units
VRReverse Voltage IR = 0.1 mA 32 V
IR(D) Dark Reverse Current VR = 10 V 30 nA
PK Peak Sensitivity 940 nm
Reception Angle at 1/2 Power ±60 o
IPH Photo Current Ee = 1 mW / cm2,
VCE = 5 V 25 37 A
C Capacitance VR = 3 V 25 pF
trRise Time VR = 10 V, RL = 50 50 ns
tfFall Time 50 ns
0.5 Special Sensitivity QSB34GR, QSB34ZR 730 1100 nm
QSB34CGR, QSB34CZR 400 1100
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 4
Typical Performance Characteristics
Figure 1. Relative Spectral Sensitivity vs.
Wavelength Figure 2. Short Circuit Current vs. Irradiance
Figure 3. Capacitance vs. Reverse Voltage Figure 4. Dark Current vs. Temperature
Figure 5. Dark Current vs. Reverse Voltage Figure 6. Response Time vs. Load Resistance
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 5
Physical Dimensions
Figure 7. PLCC DETECTOR (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or
obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/packaging/.
PLCC 2L (QSB34GR / CGR)
)/$7$5($
0,1
0,1
0$;
3+2726(16,7,9(685)$&(
&+,3
&+,3
&(17(5
3$&.$*(
&(17(5
$12'(
7239,(:
)52179,(:
6,'(9,(:
/$1'3$77(515(&200(1'$7,21
127(6
$12,1'8675<67$1'$5'$33/,(672
7+,63$&.$*(
%$//',0(16,216$5(,10,//,0(7(56
&',0(16,216'2127,1&/8'(02/'
)/$6+25%8556
''5$:,1*),/(1$0(0.7'&'$UHY
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 6
Physical Dimensions (continued)
Figure 8. PLCC DETECTOR (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notic e. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor represe ntative to verify or
obtain the most recent revision. Package specifica tions do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild produ cts.
Always visit Fairchild Semiconduct or’s online packaging are a for the most recent package drawings :
http://www.fairchildsemi.com/packaging/.
PLCC 2L (QSB34ZR / CZR)
)/$7$5($
0,1
0,1
0$;
$12'(
&+,3
&+,3
&(17(5
3$&.$*(
&(17(5
3+2726(16,7,9(
685)$&(
7239,(:
)52179,(:
6,'(9,(:
/$1'3$77(515(&200(1'$7,21
127(6
$12,1'8675<67$1'$5'$33/,(672
7+,63$&.$*(
%$//',0(16,216$5(,10,//,0(7(56
&',0(16,216'2127,1&/8'(02/'
)/$6+25%8556
''5$:,1*),/(1$0(0.7'&'%UHY
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR — Surface-Mount Silicon Pin Photodiode
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Rev. 8.6 7
Tape and Reel Dimensions
2.50
±
0.5
2.50
±
±
0.5
Ø
1
3
±
0.
5
13.
2
±
1.
5
16.
0
±
0.
2
Ø
1
78
±
1
.0
Ø
60
.2
±
0
.5
Ø1.5±0.1
CATHODE
Unit: mm
COVER TAPE Ø1.50±0.25
2.0±0.05
8.0±0.10 1.45±0.10
9°
6.90±0.10
5.5±0.05 1.75±0.10
12 +0.3
–0.1
4.0±0.10
4.20±0.10
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I77
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