SS32 thru SS36
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Revision: 22-Mar-12 1Document Number: 88751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 20 V to 60 V
IFSM 100 A
EAS 20 mJ
VF0.5 V, 0.75 V
TJ max. 125 °C, 150 °C
DO-214AB (SMC)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SS32 SS33 SS34 SS35 SS36 UNIT
Device marking code S2 S3 S4 S5 S6
Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V
Maximum RMS voltage VRMS 14 21 28 35 42 V
Maximum DC blocking voltage VDC 20 30 40 50 60 V
Maximum average forward rectified current at TL (fig. 1) IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 100 A
Non-repetitive avalanche energy at TA = 25 °C,
IAS = 2.0 A, L = 10 mH EAS 20 mJ
Voltage rate of change (rated VR)dV/dt 10 000 V/µs
Operating junction temperature range TJ- 55 to + 125 - 55 to + 150 °C
Storage temperature range TSTG - 55 to + 150 °C
SS32 thru SS36
www.vishay.com Vishay General Semiconductor
Revision: 22-Mar-12 2Document Number: 88751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1) P.C.B. mounted 0.55" x 0.55" (14 mm x 14 mm) copper pad areas
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL SS32 SS33 SS34 SS35 SS36 UNIT
Maximum instantaneous
forward voltage (1) 3.0 A VF0.5 0.75 V
Maximum DC reverse current
at rated DC blocking voltage (1)
TA = 25 °C
IR
0.5
mA
TA = 100 °C 20 10
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL SS32 SS33 SS34 SS35 SS36 UNIT
Typical thermal resistance (1) RJA 55
°C/W
RJL 17
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SS34-E3/57T 0.235 57T 850 7" diameter plastic tape and reel
SS34-E3/9AT 0.235 9AT 3500 13" diameter plastic tape and reel
SS34HE3/57T (1) 0.235 57T 850 7" diameter plastic tape and reel
SS34HE3/9AT (1) 0.235 9AT 3500 13" diameter plastic tape and reel
50 170
70 90 110 130 150
0
1.5
2.5
3.5
Resistive or Inductive Load
SS32 thru SS34
SS35 and SS36
Ambient Temperature (°C)
Average Forward Current (A)
P. C . B . M o unted on
0.55" x 0.55" (14 mm x 14 mm)
Copper Pad Areas
0.5
1.0
2.0
3.0
110 100
0
20
40
60
80
100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
At Rated TL
8.3 ms Single Half Sine-Wave
SS32 thru SS36
www.vishay.com Vishay General Semiconductor
Revision: 22-Mar-12 3Document Number: 88751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Current Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
00.4 0.81.2
0.01
0.1
1
10
100
0.2 0.6 1.0 1.4 1.6
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
SS32 thru SS34
SS35 and SS36
020 40 60 80100
100
10
1
0.1
0.01
0.001
TA = 125 °C
TA = 25 °C
TA = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
SS32 thru SS34
SS35 and SS36
0.1 110 100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
100
SS32 thru SS34
SS35 and SS36
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mounting Pad Layout
0.126 (3.20) MIN.
0.060 (1.52) MIN.
0.185 (4.69) MAX.
0.320 (8.13) REF.
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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