2N7002
Document number: DS11303 Rev. 29 - 2 2 of 5
www.diodes.com May 2012
© Diodes Incorporated
2N7002
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Continuous Drain Current (Note 6) VGS = 10V Steady
State
TA = 25°C
TA = 85°C
TA = 100°C ID 170
120
105 mA
Continuous Drain Current (Note 7) VGS = 10V Steady
State
TA = 25°C
TA = 85°C
TA = 100°C ID 210
150
135 mA
Maximum Body Diode Forward Current (Note 7) Pulsed
Continuous IS 0.5
2 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM 800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 370 mW
(Note 7) 540
Thermal Resistance, Junction to Ambient (Note 6) RθJA 348 °C/W
(Note 7) 241
Thermal Resistance, Junction to Case (Note 7) R
JC 91
Operating and Storage Temperature Range TJ, TSTG -55 to 150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current @ TC = 25°C
@ TC = 125°C IDSS ⎯ ⎯ 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS
th
1.0 ⎯ 2.5 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance @ TJ = 25°C
@ TJ = 125°C RDS (ON) ⎯ 3.2
4.4 7.5
13.5 Ω VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
On-State Drain Current ID
ON
0.5 1.0 ⎯ A VGS = 10V, VDS = 7.5V
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
Diode Forward Voltage VSD ⎯ 0.78 1.5 V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss ⎯ 22 50 pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 11 25 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
Gate resistance Rg ⎯ 120 ⎯ Ω VDS = 0V, VGS = 0V,
f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Q
⎯ 223 ⎯ pC VDS = 10V, ID = 250mA
Gate-Source Charge Q
s ⎯ 82 ⎯
Gate-Drain Charge Q
d ⎯ 178 ⎯
SWITCHING CHARACTERISTICS (Note 9)
Turn-On Delay Time tD
on
⎯ 2.8 ⎯
ns VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-On Rise Time t
⎯ 3.0 ⎯
Turn-Off Delay Time tD
off
⎯ 7.6 ⎯
Turn-Off Fall Time tf ⎯ 5.6 ⎯
Notes: 6. Device mounted on FR-4 PCB, with minimum recommended pad layout
7. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.