1) Maximum ratings are those values beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
DSM = 2800
V
ITAVM = 1400
A
ITRMS = 2210
A
ITSM = 18000
A
V
T0 =0.82
V
r
T=0.37
mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 16F2800
Doc. No. 5SYA1022-03 Jan. 02
•
••
•Patented free-floating silicon technology
•
••
•Low on-state and switching losses
•
••
•Designed for traction, energy and industrial applications
•
••
•Optimum power handling capability
Blocking
Maximum rated values 1)
Symbol Conditions 5STP 16F2800 5STP 16F2600 5STP 16F2200
VDRM, VRRM f = 50 Hz, tp = 10 ms 2800 V 2600 V 2200 V
VRSM tp = 5 ms, single pulse 3000 V 2800 V 2400 V
dV/dtcrit Exp. to 0.67 x VDRM, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125°C 200 mA
Reverse leakage current IRRM VRRM, Tvj = 125°C 200 mA
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM14 22 24 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 0.6 kg
Surface creepage distance DS25 mm
Air strike distance Da14 mm
5STP 16F2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1022-03 Jan. 02 page 2 of 6
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current ITAVM Half sine wave, Tc = 70°C 1400 A
RMS on-state current ITRMS 2210 A
Peak non-repetitive surge
current
ITSM 18000 A
Limiting load integral I2t
tp = 10 ms, Tvj = 125°C,
VD = VR = 0 V
1620 kA2s
Peak non-repetitive surge
current
ITSM 19000 A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125°C,
VD = VR=0 V
1498 kA2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VTIT = 2000 A, Tvj= 125°C 1.55 V
Threshold voltage VT0 0.82 V
Slope resistance rT
IT = 800 A - 2400 A, Tvj= 125°C
0.37 mΩ
Holding current IHTvj = 25°C 75 mA
Tvj = 125°C 60 mA
Latching current ILTvj = 25°C 500 mA
Tvj = 125°C 200 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Critical rate of rise of on-
state current
di/dtcrit Cont.
f = 50 Hz
150 A/µs
Critical rate of rise of on-
state current
di/dtcrit
Tv
j
= 125°C, ITRM = 2000 A,
VD ≤ 0.67⋅VDRM,
IFG = 2 A, tr = 0.5 µs Cont.
f = 1Hz
1000 A/µs
Circuit-commutated turn-off
time
tqTvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -20 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs,
400 µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Recovery charge Qrr Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -20 A/µs
3000 6000 µAs
Delay time tdVD = 0.4⋅VDRM, IFG = 2 A, tr = 0.5 µs 3µs
5STP 16F2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1022-03 Jan. 02 page 3 of 6
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Gate power loss PGFor DC gate current 3 W
Average gate power loss PGAV see Fig. 9
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate trigger voltage VGT Tvj = 25°C 2.6 V
Gate trigger current IGT Tvj = 25°C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125°C 0.3 V
Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125°C 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
temperature range
Tvj 125 °C
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Thermal resistance junction
to case
Rth(j-c) Double-side cooled 17 K/kW
Rth(j-c)A Anode-side cooled 33 K/kW
Rth(j-c)C Cathode-side cooled 35 K/kW
Thermal resistance case to
heatsink
Rth(c-h) Double-side cooled 4 K/kW
Rth(c-h) Single-side cooled 8 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1 234
Ri(K/kW) 10.35 3.76 2.29 0.67
τi(s) 0.3723 0.0525 0.0057 0.0023
Fig. 1 Transient thermal impedance junction-to case.
5STP 16F2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1022-03 Jan. 02 page 4 of 6
Fig. 2 On-state characteristics. Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
Fig. 4 On-state power dissipation vs. mean on-state
current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs. mean
on-state current.
5STP 16F2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1022-03 Jan. 02 page 5 of 6
Fig. 6 Surge on-state current vs. pulse length. Half-
sine wave.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20 µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-state
current.
Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current.
5STP 16F2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1022-03 Jan. 02
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 12 Device Outline Drawing.
