1. Product profile
1.1 General description
10 W LDMOS power transistor for base station applications at frequencies from
HF to 2200 MHz
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features
nTypical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
uAverage output power = 0.7 W
uGain = 18.5 dB
uEfficiency = 15 %
uACPR = −50 dBc
nTypical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,
a supply voltage of 28 V and an IDq of 100 mA:
uAverage output power=2W
uGain = 19.3 dB
uEfficiency = 31 %
uACPR = −39 dBc
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
BLF6G21-10G
Power LDMOS transistor
Rev. 02 — 11 December 2009 Product data sheet
Table 1. Typical performance
I
Dq
= 100 mA; T
case
=25
°
C in a common source class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDACPR
(MHz) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 28 0.7 18.5 15 −50[1]
1-carrier W-CDMA 2110 to 2170 28 2 19.3 31 −39[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 2 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
nExcellent thermal stability
nNo internal matching for broadband operation
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
nRF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and
multi carrier applications in the HF to 2200 MHz frequency range
nBroadcast drivers
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 drain
2 gate
3 source [1] 3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G21-10G - ceramic surface-mounted package; 2 leads SOT538A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 3 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
5. Thermal characteristics
[1] Thermal resistance is determined under specified RF operating conditions
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF6G21-10G is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
f = 2140 MHz at PL=10W.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-case) thermal resistance from junction to case Tcase = 80 °C; PL(AV) =11W [1] 3.2 K/W
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 18 mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 1.5 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V; VDS =10V - 3.1 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 150 nA
gfs forward transconductance VDS =10V; I
D= 0.9 A - 0.5 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V; ID= 0.625 A - 0.4 - Ω
Crs feedback capacitance VGS =0V; V
DS = 28 V; f = 1 MHz - 0.5 - pF
Table 7. Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2117.5 MHz; f
3
= 2162.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 100 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 0.7 W - 18.5 - dB
ηDdrain efficiency PL(AV) = 0.7 W - 15 - %
ACPR adjacent channel power ratio PL(AV) = 0.7 W - −50 - dBc
Table 8. Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP
test model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2167.5 MHz; RF performance at V
DS
=28V;
I
Dq
= 100 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 2 W 17.3 19.3 - dB
ηDdrain efficiency PL(AV) = 2 W 29 31 - %
ACPR adjacent channel power ratio PL(AV) = 2 W - −39 −36 dBc
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 4 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
7.2 CW
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 1. CW input return loss as a function of load power; typical values
PL (W)
0161248
001aal120
20
30
10
40
50
RLin
(dB)
0
(1)
(2)
(3)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 2. CW power gain as a function of load power;
typical values Fig 3. CW drain efficiency as a function of
load power; typical values
PL (W)
0161248
001aal121
17.5
18.5
19.5
Gp
(dB)
16.5
(1)
(2)
(3)
PL (W)
0161248
001aal122
40
20
60
80
ηD
(%)
0
(1)
(2)
(3)
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 5 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
7.3 1-carrier W-CDMA
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 4. 1-carrier W-CDMA input return loss as a function of load power; typical values
PL (W)
04312
001aal123
20
30
10
40
50
RLin
(dB)
0
(1)
(2)
(3)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 5. 1-carrier W-CDMA power gain as a function of
load power; typical values Fig 6. 1-carrier W-CDMA drain efficiency as a
function of load power; typical values
PL (W)
04312
001aal124
18.8
19.2
18.4
19.6
20.0
Gp
(dB)
18.0
(1)
(2)
(3)
PL (W)
04312
001aal125
20
30
10
40
50
ηD
(%)
0
(1)
(2)
(3)
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 6 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
7.4 2-carrier W-CDMA
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 7. 1-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
Fig 8. 1-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
PL (W)
04312
001aal126
−50
−40
−30
ACPR
(dBc)
−60
(3)
(2)
(1)
PL (W)
04312
001aal127
−60
−56
−52
ACPR
(dBc)
−64
(3)
(2)
(1)
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 9. 2-carrier W-CDMA input return loss as a function of load power; typical values
001aal128
PL (W)
0 1.81.20.6
20
10
30
40
RLin
(dB)
0
(1)
(2)
(3)
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 7 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
VDS = 28 V; IDq = 100 mA.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 10. 2-carrier W-CDMA power gain as a function of
load power; typical values Fig 11. 2-carrier W-CDMA drain efficiency as a
function of load power; typical values
001aal129
PL (W)
0 1.81.20.6
18.8
19.2
18.4
19.6
20.0
Gp
(dB)
18.0
(1)
(2)
(3)
PL (W)
0 1.81.20.6
001aal130
10
20
30
ηD
(%)
0
(1)
(2)
(3)
VDS = 28 V; IDq = 100 mA; carrier spacing 5 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
VDS = 28 V; IDq = 100 mA; carrier spacing 10 MHz.
(1) f = 2.11 GHz
(2) f = 2.14 GHz
(3) f = 2.17 GHz
Fig 12. 2-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
Fig 13. 2-carrier W-CDMA adjacent channel power
ratio as a function of load power;
typical values
PL (W)
0 1.81.20.6
001aal131
−50
−40
−30
ACPR
(dBc)
−60
(3)
(2)
(1)
001aal132
PL (W)
0 1.81.20.6
−50
−55
−45
−40
ACPR
(dBc)
−60
(3)
(2)
(1)
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 8 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
8. Package outline
Fig 14. Package outline SOT538A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT538A
A
Q
0 2.5 5 mm
scale
Ceramic surface-mounted package; 2 leads SOT538A
UNIT cbD EHLQ α
α
w1
mm 0.23
0.18
1.35
1.19 5.16
5.00
5.16
5.00
D1D2E1E2
4.65
4.50 4.14
3.99 7.49
7.24
4.14
3.99 7°
0°
0.25
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
2.03
1.27 0.10
0.00
A
2.95
2.29
inches 0.009
0.007
0.053
0.047 0.203
0.197
0.203
0.197 0.183
0.177 0.163
0.157
3.63
3.48
0.143
0.137 0.295
0.285
0.163
0.157 7°
0°
0.010
0.080
0.050 0.004
0.000
z1
0.58
0.43
0.023
0.017
z2
0.25
0.18
0.010
0.007
z3
0.97
0.81
0.038
0.032
z4
0.51
0.00
0.020
0.000
0.116
0.090
02-08-20
06-03-16
HE
E2E1
c
b
L
D
D2
D1
z4 (4×)z2 (4×)
B
A
2
1
3
w1B
M M
z1 (4×)
z3 (4×)
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 9 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
9. Abbreviations
10. Revision history
Table 9. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CDMA Code Division Multiple Access
CW Continuous Wave
DPCH Dedicated Physical CHannel
EDGE Enhanced Data rates for GSM Evolution
GSM Global System for Mobile communications
HF High Frequency
LDMOS Laterally Diffused Metal Oxide Semiconductor
PAR Peak-to-Average power Ratio
PDPCH transmission Power of the Dedicated Physical CHannel
PHS Personal Handy-phone System
RF Radio Frequency
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G21-10G_2 20091211 Product data sheet - BLF6G21-10G_1
Modifications: •Section 6 on page 3: added some values.
•Table 7 on page 3: added some values.
•Section 7.1 on page 3: added some values.
•Section 7.2 on page 4: added CW powersweeps.
•Section 7.3 on page 5: added 1-carrier W-CDMA powersweeps.
•Section 7.4 on page 6: added 2-carrier W-CDMA powersweeps.
BLF6G21-10G_1 20090511 Objective data sheet - -
BLF6G21-10G_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 10 of 11
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF6G21-10G
Power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 December 2009
Document identifier: BLF6G21-10G_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
7.4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Contact information. . . . . . . . . . . . . . . . . . . . . 10
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
