1
File Number 4411.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS
27A, 600V, UFS Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diode
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transistors. These devices have the high input impedance of
a MOSFET and the low on-state conduction loss of a bipolar
transistor. The much lower on-state voltage drop varies only
moderately between 25oC and 150oC. The IGBT used is the
development type TA49171. The diode used in anti-parallel
with the IGBT is the development type TA49188.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49173.
Symbol
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB (ALTERNATE VERSION)
JEDEC TO-263AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60B3D TO-220AB 12N60B3D
HGTG12N60B3D TO-247 12N60B3D
HGT1S12N60B3DS TO-263AB 12N60B3D
NOTE: When ordering, use the entirepartnumber.Addthesuffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.
HGT1S12N60B3DS9A.
C
E
G
C
EG
COLLECTOR
(FLANGE)
G
COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2000
2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IC25 27 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EARV 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5µs
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG= 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA
TC = 150oC - - 2.0 mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110,
VGE = 15V TC = 25oC - 1.6 2.1 V
TC = 150oC - 1.7 2.5 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 4.5 4.9 6.0 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 25Ω,VGE = 15V
L = 100µH, VCE = 600V 96 - - A
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 7.3 - V
On-State Gate Charge Qg(ON) IC = IC110,
VCE = 0.5 BVCES VGE = 15V - 51 60 nC
VGE = 20V - 68 78 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 19)
-26- ns
Current Rise Time trI -23- ns
Current Turn-Off Delay Time td(OFF)I - 150 - ns
Current Fall Time tfI -62- ns
Turn-On Energy EON - 304 350 µJ
Turn-Off Energy (Note 3) EOFF - 250 350 µJ
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG= 25Ω
L = 1mH
Test Circuit (Figure 19)
-22- ns
Current Rise Time trI -23- ns
Current Turn-Off Delay Time td(OFF)I - 280 295 ns
Current Fall Time tfI - 112 175 ns
Turn-On Energy EON - 500 525 µJ
Turn-Off Energy (Note 3) EOFF - 660 800 µJ
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
3
Diode Forward Voltage VEC IEC = 12A - 1.7 2.1 V
Diode Reverse Recovery Time trr IEC = 12A, dIEC/dt = 200A/µs - 32 40 ns
IEC = 1.0A, dIEC/dt = 200A/µs - 23 30 ns
Thermal Resistance Junction To Case RθJC IGBT - - 1.2 oC/W
Diode - - 1.9 oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
5
0
20
10
15
25
30 VGE = 15V
25 75 100 125 150
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
50
700
30
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
20
300 400200100 500 600
40
0
60
70
80
90
100
TJ= 150oC, RG = 25Ω, VGE = 15V, L = 100µH
TCVGE
110oC10V
15V
15V
75oC
110oC
fMAX, OPERATING FREQUENCY (kHz)
2
ICE, COLLECTOR TO EMITTER CURRENT (A)
10
3
1
100
3010 20
300
75oC10V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RθJC = 1.2oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD- PC) / (EON + EOFF)
TJ= 150oC, RG = 25Ω, L = 1mH, VCE = 480V
VGE, GATE TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 13 14 15
2
4
6
8
12
16
10
30
40
50
60
70
80
100
tSC
ISC
VCE = 360V, RG= 25Ω, TJ= 125oC
14 90
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
4
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
024
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
6810
60
50
40
TC = -55oC
TC = 150oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 10V
TC = 25oC
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
100
120
140
160
180
024
0
40
80
6810
60
20
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TC = 150oC
TC = -55oC
TC = 25oC
EON, TURN-ON ENERGY LOSS (mJ)
2.5
1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
2010
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
3025155
3.0
0
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (mJ)
0
0.5
251510 20 305
1.0
2.5 RG = 25Ω, L = 1mH, VCE = 480V
TJ = 150oC; VGE = 10V OR 15V
TJ = 25oC; VGE = 10V OR 15V
2.0
1.5
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
20 1510 20 305
25
30
35
40
45
50
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
25
55
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
10
25
0
50
75
125
100
305
150
252015
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 25oC and TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 10V
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
5
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORM
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
Typical Performance Curves Unless Otherwise Specified (Continued)
10 15 305
125
250
300
2520
100
200
150
175
225
275
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 150oC, VGE = 10V, VGE = 15V
TJ = 25oC, VGE = 10V, VGE = 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
10 15 305
60
80
100
120
140
2520
70
90
110
130
TJ = 150oC, VGE = 10V, VGE = 15V
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 25oC, VGE = 10V OR 15V
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
60
80
100
5789106
VGE, GATE TO EMITTER VOLTAGE (V)
TC = 150oC
11 12 13 14 15
120
TC = -55oC
140
160
180
4
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
TC = 25oC
Qg, GATE CHARGE (nC)
20
0
12
15
9
6
3
010515 30
VGE, GATE TO EMITTER VOLTAGE (V)
Ig (REF) = 1mA, RL = 25Ω, TC= 25oC
VCE = 200V
VCE = 400V
VCE = 600V
35 40 45 5025
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACITANCE (nF)
0.5
1.0
1.5
2.0
2.5
CIES
COES
CRES
FREQUENCY = 1MHz
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
6
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP FIGURE 18. RECOVERY TIMES vs FORWARD CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
t1, RECTANGULAR PULSE DURATION (s)
10-5 10-3 100101
10-4 10-1
10-2
100
ZθJC, NORMALIZED THERMAL RESPONSE
10-1
10-2
DUTY FACTOR, D = t1 / t2
PEAK TJ = PDx ZθJC x RθJC + TC
t1
t2
PD
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
0.5 1.0 1.5 2.5 3.0
IEC, FORWARD CURRENT (A)
VEC, FORWARD VOLTAGE (V)
0 2.0
10
0
20
30
40
50
25oC
100oC
150oC
30
20
10
0
tr, RECOVERY TIMES (ns)
IEC, FORWARD CURRENT (A)
510 20015
35
25
15
5
trr
ta
tb
TC = 25oC, dIEC/dt = 200A/µs
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
7
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 20.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allow ab le dissipation (PD) is defined by PD=(T
JM -T
C)/RθJC.
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 20. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE xV
CE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
Test Circuit and Waveform
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 20. SWITCHING TEST WAVEFORM
RG = 25Ω
L = 1mH
VDD = 480V
+
-
HGTP12N60B3D
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
ECCOSORBD is a Trademark of Emerson and Cumming, Inc.
