Device VZ
(V) ZZ
()IZT
(mA) ZZK
()IZK
(mA) VR
(V) IR
(µA) ISURGE
(mA) IZM
(mA)
1N4728A
1N4729A
1N4730A
1N4731A
3.3
3.6
3.9
4.3
10
10
9.0
9.0
76
69
64
58
400
400
400
400
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
100
100
50
10
1,380
1,260
1,190
1,070
276
252
234
217
1N4732A
1N4733A
1N4734A
1N4735A
4.7
5.1
5.6
6.2
8.0
7.0
5.0
2.0
53
49
45
41
500
550
600
700
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
10
10
10
10
970
890
810
730
193
178
162
146
1N4736A
1N4737A
1N4738A
1N4739A
6.8
7.5
8.2
9.1
3.5
4.0
4.5
5.0
37
34
31
28
700
700
700
700
1.0
0.5
0.5
0.5
4.0
5.0
6.0
7.0
10
10
10
10
660
605
550
500
133
121
110
100
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
10
11
12
13
15
7.0
8.0
9.0
10
14
25
23
21
19
17
700
700
700
700
700
0.25
0.25
0.25
0.25
0.25
7.6
8.4
9.1
9.9
11.4
10
5.0
5.0
5.0
5.0
454
414
380
344
304
91
83
76
69
61
1N4745A
1N4746A
1N4747A
1N4748A
16
18
20
22
16
20
22
23
15.5
14
12.5
11.5
700
750
750
750
0.25
0.25
0.25
0.25
12.2
13.7
15.2
16.7
5.0
5.0
5.0
5.0
285
250
225
205
57
50
45
41
1N4749A
1N4750A
1N4751A
1N4752A
24
27
30
33
25
35
40
45
10.5
9.5
8.5
7.5
750
750
1,000
1,000
0.25
0.25
0.25
0.25
18.2
20.6
22.8
25.1
5.0
5.0
5.0
5.0
190
170
150
135
38
34
30
27
VF Foward Voltag e = 1.2 V Maximum @ IF = 200 mA for all 1N4700 series
1N4728A - 1N4752A Series One Watt Zeners
Absolute Maximum Ratings* TA = 25°C unless otherwise noted Tolerance: A = 5%
Electrical Characteristics TA = 25°C unless otherwise noted
@
@
@
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed
or low duty cycle operations.
*These ratings are limiting values above which the serviceability of the diode may be impaired.
**Non-recurrent square wave PW= 8.3 ms, TA= 55 degrees C.
Parameter Value Units
Storage Temperature R ange -65 to +200 °C
M aximum Junction O perating T em perature + 200 °C
Lead Temperature (1/16” from case for 10 sec onds) + 230 °C
Total D evice D issipation
D erate above 50°C1.0
6.67 W
mW/°C
Therm al resista nce Junction to Lead 53.5 °C/W
Therm al resista nce Junction to A m bient 100 °C/W
Surge Power** 10 W
1N4728A - 1N4752A Series
DO-41
1997 Fairchild Semiconductor Corporation 1N4700A Rev. B
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