SIEMENS BB 837 Silicon Tuning Diode Preliminary data e Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units * High capacitance ratio Type Marking | Ordering Code Pin Configuration | Package BB 837 M Q62702-Bo904 1=C 2=A SOD-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 30 V Peak reverse voltage (A 2 5kQ) Vam 35 Forward current Ir 20 mA Operating temperature range Top 55 ...4150 C Storage temperature T stg 55 ...+150 Semiconductor Group 1 Mar-27-1998 SIEMENS BB 837 Electrical Characteristics at 7, = 25C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR =30V 10 nA Reverse current VR =30V, Ta =85 C 200 AC characteristics Diode capacitance Va =1V, f= 1MHz VR = 25 V, f= 1 MHz VR = 28 V, f= 1 MHz 0.45 6.6 0.55 0.54 7.2 0.65 pF Capacitance ratio VR=lV, VR =25 V, f= 1 MHz Cri/Cras5 12 Capacitance ratio VR = 1V to 28V, f= 1 MHz Cr1/Cra2g 9.7 12.2 Capacitance matching VR = 1V to 28V, f= 1 MHz ACT/Cr % Series resistance Va =1V, f= 470 MHz 1.5 Series inductance 1.4 nH Semiconductor Group Mar-27-1998 SIEMENS BB 837 Diode capacitance Cy =f (VR) f= 1MHz 10 pF an Semiconductor Group 3 Mar-27-1998