Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. BUK445 -200A -200B
The device is intended for use in VDS Drain-source voltage 200 200 V
Switched Mode Power Supplies IDDrain current (DC) 7.6 7 A
(SMPS), motor control, welding, Ptot Total power dissipation 30 30 W
DC/DC and AC/DC converters, and TjJunction temperature 150 150 ˚C
in general purpose switching RDS(ON) Drain-source on-state 0.23 0.28 Ω
applications. resistance
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 gate
2 drain
3 source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 200 V
VDGR Drain-gate voltage RGS = 20 kΩ- 200 V
±VGS Gate-source voltage - - 30 V
-200A -200B
IDDrain current (DC) Ths = 25 ˚C - 7.6 7 A
IDDrain current (DC) Ths = 100 ˚C - 4.8 4.4 A
IDM Drain current (pulse peak value) Ths = 25 ˚C - 30 28 A
Ptot Total power dissipation Ths = 25 ˚C - 30 W
Tstg Storage temperature - - 55 150 ˚C
TjJunction Temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 4.17 K/W
heatsink
Rth j-a Thermal resistance junction to - 55 - K/W
ambient
123
case
d
g
s
April 1993 1 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA 200 - - V
voltage
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
IDSS Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
IDSS Zero gate voltage drain current VDS = 200 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
IGSS Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
RDS(ON) Drain-source on-state VGS = 10 V; BUK445-200A - 0.2 0.23 Ω
resistance ID = 7 A BUK445-200B - 0.22 0.28 Ω
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 7 A 6 8.4 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1400 1750 pF
Coss Output capacitance - 190 250 pF
Crss Feedback capacitance - 55 80 pF
td on Turn-on delay time VDD = 30 V; ID = 3 A; - 18 30 ns
trTurn-on rise time VGS = 10 V; RGS = 50 Ω; - 35 60 ns
td off Turn-off delay time Rgen = 50 Ω- 85 120 ns
tfTurn-off fall time - 35 50 ns
LdInternal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
LsInternal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Cisol Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDR Continuous reverse drain - - - 7.6 A
current
IDRM Pulsed reverse drain current - - - 30 A
VSD Diode forward voltage IF = 7.6 A ; VGS = 0 V - 1.0 1.5 V
trr Reverse recovery time IF = 7.6 A; -dIF/dt = 100 A/µs; - 150 - ns
Qrr Reverse recovery charge VGS = 0 V; VR = 30 V - 1.3 - µC
April 1993 2 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
AVALANCHE LIMITING VALUE
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
WDSS Drain-source non-repetitive ID = 14 A ; VDD ≤ 100 V ; - - 100 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy
Fig.1. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25 ˚C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
⋅
I
D
/I
D 25 ˚C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
hs
= 25 ˚C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0 20 40 60 80 100 120 140
Ths / C
PD% Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1 10 100 1000
VDS / V
100
10
1
0.1
DC
BUK445-200A,B
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
B
A
RDS(ON) = VDS/ID
0 20 40 60 80 100 120 140
Ths / C
ID% Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx45-lv
D =
D =
t
p
t
p
T
T
P
t
D
April 1993 3 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
Fig.5. Typical output characteristics, T
j
= 25 ˚C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 ˚C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 ˚C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 ˚C
= f(T
j
); I
D
= 7 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0 2 4 6 8 10 12 14 16 18 20
BUK455-200A
VDS / V
30
20
10
0 4
5
6
781020
ID / A VGS / V =
0 4 8 12 16 20 24 28
BUK455-200A
ID / A
gfs / S
15
10
5
0
0 4 8 12 16 20 24 28
BUK455-200A
ID / A
1.0
0.8
0.6
0.4
0.2
0
44.5 55.5
6
8
10
20
RDS(ON) / Ohm
VGS / V =
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0 2 4 6 8 10
BUK455-200A
VGS / V
ID / A
28
24
20
16
12
8
4
0
Tj / C = 150 25
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
April 1993 4 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 ˚C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 14 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
hs
); conditions: I
D
= 14 A
Fig.16. Avalanche energy test circuit.
0 1 2 3 4
VGS / V
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 % 98 %
012
BUK455-200A
VSDS / V
IF / A
30
20
10
0
Tj / C = 150 25
0 20 40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000 BUK4y5-200
20 40 60 80 100 120 140
Ths / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
0 10 20 30
QG / nC
VGS / V
12
10
8
6
4
1
0
VDS / V =40
160
BUK455-200
L
T.U.T.
VDD
RGS R 01
VDS
-ID/100
+
-
shunt
VGS
0
WDSS =0.5 ⋅LID
2⋅BVDSS/(BVDSS −VDD)
April 1993 5 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.17. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
2.54
5.08
0.9
0.7
123
M
0.4
top view
3.5 max
not tinned 4.4
April 1993 6 Rev 1.100
Philips Semiconductors Product Specification
PowerMOS transistor BUK445-200A/B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1993 7 Rev 1.100
