MCCSEMI.COM
Rev.3-1-01012019 1/4
NPN
Small Signal
Transistors
MMST3904
Features
Internal Structure
Marking: K2N
Maximum Ratings @ 25°C Unless Otherwise Specified
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Moisture Sensitivity Level 1
• Epoxy Meets UL 94 V-0 Flammability Rating
Collector Current IC200 mA
Collector Power Dissipation (1) PC200
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6V
Unit
Collector-Base Voltage VCBO 60V
mW
• Operating Junction Temperature Range: -55℃ to +150℃
•Storage Temperature Range: -55℃ to +150℃
Parameter Symbol Rating
•Epitaxial Planar Die Construction
•Ultra-Small Surface Mount Package
Note: 1. Valid provided that terminals are kept at ambient temperature.
E
B
C
SOT-323
BC
D
E
F
GHJ
K
A
MIN MAX MIN MAX
A 0.071 0.087 1.80 2.20
B
0.083 0.096 2.10 2.45
C
0.045 0.053 1.15 1.35
D
E 0.047 0.055 1.20 1.40
F 0.012 0.016 0.30 0.40
G 0.000 0.004 0.00 0.10
H 0.035 0.044 0.90 1.10
J0.0020.010 0.050.25
K 0.006 0.016 0.15 0.40
DIMENSIONS
DIM INCHES MM NOTE
0.026 0.65
1.90
0.70
0.90
0.65
0.65
(mm)
Suggested Solder Pad Layout
TYP.
•Complementary PNP Type Available MMST3906
MCCSEMI.COM
Rev.3-1-01012019 2/4
Electrical Characteristics @ 25°C Unless Otherwise Specified
MMST3904
Parameter Symbol Min Typ Max Units Conditions
IC=10µA, IE=0
Collector-Emitter Breakdown Voltage(2) V(BR)CEO 40 VIC=1mA, IB=0
Collector-Base Breakdown Voltage(2) V(BR)CBO 60 V
IE=10µA, IC=0
Base Cutoff Current (2) IBL 50 nA VCE=30V, VEB(OFF)=3V
Emitter-Base Breakdown Voltage(2) V(BR)EBO 5 V
VCE=30V, VEB(OFF)=3V
DC Current Gain(2)
hFE(1) 40 VCE=1V, IC=0.1mA
hFE(2) 70
Collector Cutoff Current (2) ICEX 50 nA
VCE=1V, IC=1mA
hFE(3) 100 300 VCE=1V, IC=-10mA
hFE(5) 30 VCE=1V, IC=500mA
hFE(4) 60 VCE=1V, IC=50mA
IC=10mA, IB=1mA
0.3 VIC=50mA, IB=5mA
Collector-Emitter Saturation Voltage(2) VCE(sat)
0.25V
IC=10mA, IB=1mA
0.95 VIC=50mA, IB=5mA
Base-Emitter Saturation Voltage(2) VBE(sat)
0.65 0.85 V
Note: 2.Pulse Width ≤ 300μs, Duty Cycle≤2.0%
Output Capacitance Ccbo 4.0 pF VCB=5V, IE=0, f=1MHz,
Input Capacitance Cibo
VCC=3V, IC=0.1mA
VBE(OFF)=-0.5V, IB1=1mA
Rise Time tr35 ns
Delay Time td35 ns
8.0 pF VBE=0.5V, IC=0, f=1MHz,
Noise Figure NF 5dB VCE=5V, IC=0.1mA
RS=1KΩ, f=1KHz
VCE=20V, IC=10mA, f=100MHz
Input Impedance hie 110KΩ
VCE=10V, IC=1mA, f=1KHz
Voltage Feedback Ratio hre
Transition Frequency fT300 MHz
Output Admittance hoe 140 uS
0.5 8x104
Small Signal Current Gain hfe 100 400
MCCSEMI.COM
Rev.3-1-01012019 3/4
Curve Characteristics
MMST3904
1 1000.1 200
50
100
150
200
250
0
300
Common Emitter
VCE= 1V
TA=100°C
DC Current Gain
10
Collector Current (mA)
Fig. 2 - DC Current Gain Characteristics
TA=25°C
1 1000.1 200
0.2
0.4
0.6
0.8
1.0
β=10
TA=100°C
Base-Emitter Saturation Voltage (V)
10
Collector Current (mA)
Fig. 4 - Base-Emitter Saturation Voltage Characteristics
TA=25°C
1001 200
0
100
200
300
400
β=10
TA=100°C
Collector-Emitter Saturation Voltage (mV)
10
Collector Current (mA)
Fig. 3 - Collector-Emitter Saturation Voltage Characteristics
TA=25°C
1
10
100
0.1
200
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Common Emitter
VCE=1V
TA=100°C
TA=25°C
Base-Emitter Voltage (V)
Collcetor Current (mA)
Fig. 5 - Base-Emitter Voltage Characteristics
0 25 50 75 100 125 150
0
50
100
150
200
250
Collector Power Dissipation (mW)
Ambient Temperature (°C)
Fig. 6 - Collector Power Derating Curve
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
5
10
15
20
20μA
30μA
40μA
50μA
60μA
70μA
80μA
90μA
100μA
IB= 10μA
COMMON EMITTER
TA=25°C
Collector Current (mA)
Collector-Emitter Voltage (V)
Fig. 1 - Static Characteristics
MCCSEMI.COM
Rev.3-1-01012019 4/4
Ordering Information
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represented on our website, harmless against all damages.
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written approval of Micro Commercial Components Corporation.
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distributors.
Device Packing
Part Number-TP Tape&Reel: 3Kpcs/Reel
Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF
MMST3904
