SSM6P09FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P09FU
High Speed Switching Applications
Small package
Low Drain-Source ON resistance.
: Ron = 2.7 (max) (@VGS = 10 V)
: Ron = 4.2 (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS 30 V
Gate-Source voltage VGSS ±20 V
DC ID 200
Drain current
Pulse IDP 800
mA
Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg 55~150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
JEITA
TOSHIBA 2-2J1C
Weight: 6.8 mg (typ.)
SSM6P09FU
2007-11-01
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Marking Equivalent Circuit Figure 1:
25.4 mm × 25.4 mm × 1.6 t,
(top view) Cu Pad: 0.32 mm2 × 6
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 ±1 μA
Drain-Source breakdown voltage V (BR) DSS ID = 1 mA, VGS = 0 30 V
Drain cut-off current IDSS V
DS = 30 V, VGS = 0 1 μA
Gate threshold voltage Vth V
DS = 5 V, ID = 0.1 mA 1.1 1.8 V
Forward transfer admittance Yfs V
DS = 5 V, ID = 100 mA (Note2) 115 mS
ID = 100 mA, VGS = 10 V (Note2) 2.1 2.7
ID = 100 mA, VGS = 4 V (Note2) 3.3 4.2
Drain-Source ON resistance RDS (ON)
ID = 100 mA, VGS = 3.3 V(Note2) 4.0 6.0
Ω
Input capacitance Ciss V
DS = 5 V, VGS = 0, f = 1 MHz 22 pF
Reverse transfer capacitance Crss V
DS = 5 V, VGS = 0, f = 1 MHz 5 pF
Output capacitance Coss V
DS = 5 V, VGS = 0, f = 1 MHz 14 pF
Turn-on time ton 85
Switching time
Turn-off time toff
VDD = 5 V, ID = 100 mA,
VGS = 0~4 V 85 ns
Note2: Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
(c) VOUT
(b) VIN
ton
90%
10%
4 V
0 V
90%
10%
toff
tr tf
VDS
(
ON
)
VDD
VDD = 5 V
Duty
<
=
1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
OUT
IN
0
4 V
10 μs
50 Ω
RL
(a) Test circuit
D K
6 5 4
1 2 3
0.4 mm
0.8 mm
Q1
Q2
6 5 4
1 2 3
SSM6P09FU
2007-11-01
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(Q1, Q2 common)
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source voltage VDS (V)
ID – VDS
Drain current ID (mA)
Drain current ID (mA)
RDS (ON) – ID
Drain-Source on resistance
RDS (ON) (Ω)
Gate-Source voltage VGS (V)
ID – VGS
Drain current ID (mA)
Gate-Source voltage VGS (V)
RDS (ON) – VGS
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain current ID (mA)
Yfs – ID
Forward transfer admittance
Yfs (mS)
400
200
0
0 0.5 1 1.5 2
100
Common Source
Ta = 25°C 10 4
VGS = 2.4 V
3.3
3.0
2.8
2.6
300
500 8
7
5
3
0
0 100 200 300 400 500
6
4
2
1
Common Source
Ta = 25°C
4 V
10 V
VGS = 3.3 V
8
7
3
2
0
25 0 25 75 100 150
6
5
4
1
50 125
10 V
Common Source
ID = 100 mA
4 V
VGS = 3.3 V
0.01
1
10
0 4 2 1
100
1000
3
0.1
Common Source
VDS = 5 V
25°C
25°C
Ta = 100°C
8
7
5
3
0
0 2 4 6 8 10
6
4
2
1
Common Source
ID = 100 mA
Ta = 100°C
25°C
25°C
10
100
10 100
1000
1000
Common Source
VDS = 5 V
Ta = 25°C
30 300 50 500
30
300
500
50
SSM6P09FU
2007-11-01
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(Q1, Q2 common)
*: Total rating
Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
Drain-Source voltage VDS (V)
IDR – VDS
Drain Reveres current IDR (mA)
Drain-Source voltage VDS (V)
C – VDS
Capacitance C (pF)
Drain current ID (mA)
t – ID
Switching time t (ns)
Ambient temperature Ta (°C)
PD* – Ta
Power dissipation PD* (mW)
400
200
0
0 0.4 1
1.4
100
300
500
Common Source
VGS = 0
Ta = 25°C
0.2 0.6 0.8 1.2
S
G IDR
D
Mounted on FR4 board.
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.32 mm2 × 6) Figure 1
0
100
200
0 160 100 60 20 80 40 120
300
400
140
1
10
0.1 1
100
10 100
500
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Coss
Crss
Ciss
10
100
1 10
1000
100 1000
5000
Common Source
VDD = 5 V
VGS = 0~4 V
Ta = 25°C
toff
tf
ton
t
r
2
1.8
1.2
0.8
0.4
0
25 0 25 75 100 150
1.6
1.4
1
0.6
0.2
Common Source
ID = 0.1 mA
VDS = 5 V
50 125
SSM6P09FU
2007-11-01
5
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