SSM6P09FU
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6P09FU
High Speed Switching Applications
• Small package
• Low Drain-Source ON resistance.
: Ron = 2.7 Ω (max) (@VGS = −10 V)
: Ron = 4.2 Ω (max) (@VGS = −4 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics Symbol Rating Unit
Drain-Source voltage VDS −30 V
Gate-Source voltage VGSS ±20 V
DC ID −200
Drain current
Pulse IDP −800
mA
Drain power dissipation (Ta = 25°C) PD (Note 1) 300 mW
Channel temperature Tch 150 °C
Storage temperature range Tstg −55~150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating, mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6) Figure 1.
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-2J1C
Weight: 6.8 mg (typ.)
SSM6P09FU
2007-11-01
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Marking Equivalent Circuit Figure 1:
25.4 mm × 25.4 mm × 1.6 t,
(top view) Cu Pad: 0.32 mm2 × 6
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA
Drain-Source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −30 ⎯ ⎯ V
Drain cut-off current IDSS V
DS = −30 V, VGS = 0 ⎯ ⎯ −1 μA
Gate threshold voltage Vth V
DS = −5 V, ID = −0.1 mA −1.1 ⎯ −1.8 V
Forward transfer admittance ⎪Yfs⎪ V
DS = −5 V, ID = −100 mA (Note2) 115 ⎯ ⎯ mS
ID = −100 mA, VGS = −10 V (Note2) ⎯ 2.1 2.7
ID = −100 mA, VGS = −4 V (Note2) ⎯ 3.3 4.2
Drain-Source ON resistance RDS (ON)
ID = −100 mA, VGS = −3.3 V(Note2) ⎯ 4.0 6.0
Ω
Input capacitance Ciss V
DS = −5 V, VGS = 0, f = 1 MHz ⎯ 22 ⎯ pF
Reverse transfer capacitance Crss V
DS = −5 V, VGS = 0, f = 1 MHz ⎯ 5 ⎯ pF
Output capacitance Coss V
DS = −5 V, VGS = 0, f = 1 MHz ⎯ 14 ⎯ pF
Turn-on time ton ⎯ 85 ⎯
Switching time
Turn-off time toff
VDD = −5 V, ID = −100 mA,
VGS = 0~−4 V ⎯ 85 ⎯ ns
Note2: Pulse test
Switching Time Test Circuit (Q1, Q2 Common)
Precaution
Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for
this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires
lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) )
Please take this into consideration for using the device.
(c) VOUT
(b) VIN
ton
90%
10%
−4 V
0 V
90%
10%
toff
tr tf
VDS
(
ON
)
VDD
VDD = −5 V
Duty
<
=
1%
VIN: tr, tf < 5 ns
(Zout = 50 Ω)
Common Source
Ta = 25°C
VDD
OUT
IN
0
−4 V
10 μs
50 Ω
RL
(a) Test circuit
D K
6 5 4
1 2 3
0.4 mm
0.8 mm
Q1
Q2
6 5 4
1 2 3
SSM6P09FU
2007-11-01
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(Q1, Q2 common)
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source on resistance
RDS (ON) (Ω)
Drain-Source voltage VDS (V)
ID – VDS
Drain current ID (mA)
Drain current ID (mA)
RDS (ON) – ID
Drain-Source on resistance
RDS (ON) (Ω)
Gate-Source voltage VGS (V)
ID – VGS
Drain current ID (mA)
Gate-Source voltage VGS (V)
RDS (ON) – VGS
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain current ID (mA)
⏐Yfs⏐ – ID
Forward transfer admittance
⏐Yfs⏐ (mS)
−400
−200
0
0 −0.5 −1 −1.5 −2
−100
Common Source
Ta = 25°C −10 −4
VGS = −2.4 V
−3.3
−3.0
−2.8
−2.6
−300
−500 8
7
5
3
0
0 −100 −200 −300 −400 −500
6
4
2
1
Common Source
Ta = 25°C
−4 V
−10 V
VGS = −3.3 V
8
7
3
2
0
−25 0 25 75 100 150
6
5
4
1
50 125
−10 V
Common Source
ID = −100 mA
−4 V
VGS = −3.3 V
−0.01
−1
−10
0 −4 −2 −1
−100
−1000
−3
−0.1
Common Source
VDS = −5 V
25°C
−25°C
Ta = 100°C
8
7
5
3
0
0 −2 −4 −6 −8 −10
6
4
2
1
Common Source
ID = −100 mA
Ta = 100°C
25°C
−25°C
10
100
−10 −100
1000
−1000
Common Source
VDS = −5 V
Ta = 25°C
−30 −300 −50 −500
30
300
500
50
SSM6P09FU
2007-11-01
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(Q1, Q2 common)
*: Total rating
Ambient temperature Ta (°C)
Vth – Ta
Gate threshold voltage Vth (V)
Drain-Source voltage VDS (V)
IDR – VDS
Drain Reveres current IDR (mA)
Drain-Source voltage VDS (V)
C – VDS
Capacitance C (pF)
Drain current ID (mA)
t – ID
Switching time t (ns)
Ambient temperature Ta (°C)
PD* – Ta
Power dissipation PD* (mW)
−400
−200
0
0 0.4 1
1.4
−100
−300
−500
Common Source
VGS = 0
Ta = 25°C
0.2 0.6 0.8 1.2
S
G IDR
D
Mounted on FR4 board.
(25.4 mm × 25.4 mm ×1.6 t
Cu pad: 0.32 mm2 × 6) Figure 1
0
100
200
0 160 100 60 20 80 40 120
300
400
140
1
10
−0.1 −1
100
−10 −100
500
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Coss
Crss
Ciss
10
100
−1 −10
1000
−100 −1000
5000
Common Source
VDD = −5 V
VGS = 0~−4 V
Ta = 25°C
toff
tf
ton
t
r
−2
−1.8
−1.2
−0.8
−0.4
0
−25 0 25 75 100 150
−1.6
−1.4
−1
−0.6
−0.2
Common Source
ID = −0.1 mA
VDS = −5 V
50 125
SSM6P09FU
2007-11-01
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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