933939380115 - NXP - Pdf.Support

DATA SH EET

Product speciﬁcation

Supersedes data of 1996 Oct 01 2000 May 25

DISCRETE SEMICONDUCTORS

BAS86

Schottky barrier diode

lfpage

M3D121

2000 May 25 2

Philips Semiconductors Product speciﬁcation

Schottky barrier diode BAS86

FEATURES

•Low forward voltage

•High breakdown voltage

•Guard ring protected

•Hermetically-sealed small SMD

package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits

•Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an

integrated protection ring against

static discharges.

This surface mounted diode is

encapsulatedinahermeticallysealed

SOD80C glass SMD package with

tin-plated metal discs at each end. It

is suitable for “automatic placement”

and as such it can withstand

immersion soldering.

Fig.1 Simplified outline (SOD80C), pin configuration and symbol.

handbook, halfpage

MAM190

Cathode indicated by a grey band.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous reverse voltage −50 V

IFcontinuous forward current −200 mA

IF(AV) average forward current see Fig.2 −200 mA

IFRM repetitive peak forward current tp≤1 sec.; δ≤0.5 −500 mA

IFSM non-repetitive peak forward current tp=10ms −5A

stg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

2000 May 25 3

Philips Semiconductors Product speciﬁcation

Schottky barrier diode BAS86

ELECTRICAL CHARACTERISTICS

Tamb =25°C; unless otherwise speciﬁed.

Note

1. Pulsed test: tp= 300 µs; δ= 0.02.

THERMAL CHARACTERISTICS

Note

1. Refer to SOD80 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage see Fig.3

IF= 0.1 mA 300 mV

IF= 1 mA 380 mV

IF= 10 mA 450 mV

IF= 30 mA 600 mV

IF= 100 mA 900 mV

IRreverse current VR= 40 V; see Fig.4; note 1 5 µA

trr reverse recovery time when switched from IF= 10 mA to IR= 10 mA;

RL= 100 Ω; measured at IR= 1 mA; see Fig.6 4ns

ddiode capacitance f = 1 MHz; VR= 1 V; see Fig.5 8 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 320 K/W

2000 May 25 4

Philips Semiconductors Product speciﬁcation

Schottky barrier diode BAS86

GRAPHICAL DATA

Fig.2 Derating curve.

handbook, halfpage

100

150

200

250

0 50 100 150

IF(AV)

(mA)

T ( C)

amb o

MRA540

handbook, halfpage

1.20.80.40 VF (V)

(mA)

103

102

10−1

MLD357

(1) (2) (3)

Fig.3 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb =85°C.

(3) Tamb =25°C.

(1) Tamb =85°C.

(2) Tamb =25°C.

(3) Tamb =−40 °C.

handbook, halfpage

105

(nA)

103

102

−1500

MGC686

10 20 30 40VR (V)

(1)

(2)

(3)

Fig.4 Reverse current as a function of reverse

voltage; typical values.

f = 1 MHz.

Fig.5 Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

050

(pF)

MGC687

10 20 30 40 VR (V)

2000 May 25 5

Philips Semiconductors Product speciﬁcation

Schottky barrier diode BAS86

Fig.6 Reverse recovery definitions.

andbook, halfpage

90%

10%

MRC129 - 1

2000 May 25 6

Philips Semiconductors Product speciﬁcation

Schottky barrier diode BAS86

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

Note

1. The marking band indicates the cathode.

SOD80C 100H01 97-06-20

Hermetically sealed glass surface mounted package; 2 connectors SOD80C

UNIT D

mm 1.60

1.45 3.7

3.3 0.3

DIMENSIONS (mm are the original dimensions)

(1)

0 1 2 mm

scale

2000 May 25 7

Philips Semiconductors Product speciﬁcation

Schottky barrier diode BAS86

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseor atanyother conditionsabovethose givenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofanyof theseproducts,conveysnolicence ortitle

under any patent, copyright, or mask work right to these

products,and makes norepresentations orwarranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2000 69

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Printed in The Netherlands 613514/03/pp8 Date of release: 2000 May 25 Document order number: 9397 750 07025