BSD235C
OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Features
·Complementary P + N channel
·Enhancement mode
·Super Logic level (2.5V rated)
·Avalanche rated
·Qualified according to AEC Q101
·100% lead-free; RoHS compliant
·Halogen-free according to IEC61249-2-21 PG-SOT-363
Type Package Tape and Reel Information Marking Lead Free Packing
BSD235C PG-SOT-363 L6327: 3000 pcs / reel X9s Yes Non dry
4
5
6
123
P N
VDS -20 20 V
RDS(on),max VGS=±4.5 V 1200 350 mW
VGS=±2.5 V 2100 600
ID-0.53 0.95 A
Product Summary
Rev.2.2 page 1 2011-10-24
Maximum ratings, at Tj=25 °C, unless otherwise specified 1)
Parameter Symbol Conditions Unit
P N
Continuous drain current IDTA=25 °C -0.53 0.95 A
TA=70 °C -0.46 0.76
Pulsed drain current ID,pulse TA=25 °C -2.1 3.8
Avalanche energy, single pulse EAS
P: ID=-0.53 A,
N: ID=0.95 A,
RGS=25 W
1.4 1.6 mJ
Gate source voltage VGS V
Power dissipation Ptot TA=25 °C W
Operating and storage temperature Tj,Tstg °C
ESD class JESD22-A114-HBM °C
Soldering temperature Tsolder °C
IEC climatic category; DIN IEC 68-1
Value
-55 ... 150
55/150/56
260
±12
0.5
1) Remark: only one of both transistors active
0 (<250V)
Type Package Tape and Reel Information Marking Lead Free Packing
BSD235C PG-SOT-363 L6327: 3000 pcs / reel X9s Yes Non dry
Rev.2.2 page 1 2011-10-24
BSD235C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
P
N
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage P V(BR)DSS VGS=0 V, ID=-250 µA - - -20 V
NVGS=0 V, ID=250 µA 20 - -
Gate threshold voltage P VGS(th) VDS=VGS,ID=-1.5 µA -1.2 -0.9 -0.6
NVDS=VGS,ID=1.6 µA 0.7 0.95 1.2
Zero gate voltage drain current P IDSS VDS=-20 V, VGS=0 V,
Tj=25 °C - - -1 µA
N
VDS=20 V, VGS=0 V,
T
=25 °C
-
-
1
K/W
RthJA
Values
Thermal resistance, junction -
ambient - - 250
minimal footprint 2)
Rev.2.2 page 2 2011-10-24
N
T
j
=25 °C
-
-
1
PVDS=-20 V, VGS=0 V,
Tj=150 °C - - -100
NVDS=20 V, VGS=0 V,
Tj=150 °C - - 100
P
N
PRDS(on) VGS=-2.5 V,
ID=-0.17 A - 1221 2100 mW
NVGS=2.5 V, ID=0.29 A - 415 600
PVGS=-4.5V, ID=-
0.53 A - 745 1200
NVGS=4.5 V, ID=0.95 A - 266 350
Transconductance P gfs |VDS|>2|ID|RDS(on)max,
ID=-0.46 A - 0.7 - S
N|VDS|>2|ID|RDS(on)max,
ID=0.76 A - 2 -
±100 nA
IGSS -
VGS=±12 V, VDS=0 V -Gate-source leakage current
2) Performed on 40mm2FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Drain-source on-state
resistance
Rev.2.2 page 2 2011-10-24
BSD235C
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance P Ciss - 37 - pF
N - 47 -
Output capacitance P Coss - 17 -
N - 24 -
Reverse transfer capacitance P Crss - 14 -
N - 3 -
Turn-on delay time P td(on) - 3.8 - ns
N - 3.8 -
Rise time P tr- 5.0 -
N - 3.6 -
Turn-off delay time P td(off) - 5.1 -
N - 4.5 -
Values
VGS=0 V,
P: VDS=-10 V,
N: VDS= 10 V,
f=1 MHz
P: VDD
=-10 V,
VGS=-4.5 V, RG=6 W,
ID
=-0.53 A
N: VDD
=10 V,
VGS=4.5 V, RG=6 W,
=0.95 A
Rev.2.2 page 3 2011-10-24
N
-
4.5
-
Fall time P tf- 3.2 -
N - 1.2 -
Gate Charge Characteristics
Gate to source charge P Qgs - -0.09 - nC
Gate to drain charge Qgd - -0.2 -
Switching charge Qg- -0.4 -
Gate plateau voltage Vplateau - -2.4 -
Gate to source charge N Qgs - 0.11 -
Gate to drain charge Qgd - 0.09 -
Switching charge Qg- 0.34 -
Gate plateau voltage Vplateau - 2.4 -
VDD=16 V,
ID=0.95 A,
VGS=0 to 4.5 V
D
=0.95 A
VDD=-10 V,
ID=-0.53 A,
VGS=0 to -4.5 V
Rev.2.2 page 3 2011-10-24
BSD235C
Parameter Symbol Conditions Unit
min. typ. max.
Reverse Diode
PIS- - -0.42 A
N 0.5
Diode pulse current P IS,pulse - - -2.1
N - - 3.8
Diode forward voltage P VSD VGS=0 V, IF=-0.53 A,
Tj=25 °C - -1 -1.2 V
NVGS=0 V, IF=0.95 A,
Tj=25 °C - 0.9 1.1
Reverse recovery time P trr - 7.6 - ns
N - 5.2 -
Reverse recovery charge P Qrr - 1.1 - nC
N - 0.97 -
Diode continuous forward current
Values
TC=25 °C
VR=±10 V, IF=IS,
diF/dt=100 A/µs
Rev.2.2 page 4 2011-10-24Rev.2.2 page 4 2011-10-24
BSD235C
1 Power dissipation (P) 2 Power dissipation (N)
Ptot=f(TA)Ptot=f(TA)
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA[°C]
Rev.2.2 page 5 2011-10-24
3 Drain current (P) 4 Drain current (N)
ID=f(TA)ID=f(TA)
parameter: VGS≤-4.5 V parameter: VGS≥4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.2
0.4
0.6
0.8
1
0 40 80 120 160
ID[A]
TA[°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.2
0.4
0.6
0.8
1
0 40 80 120 160
-ID[A]
TA[°C]
Rev.2.2 page 5 2011-10-24
BSD235C
5 Safe operating area (P) 6 Safe operating area (N)
ID=f(VDS); TA=25 °C; D=0 ID=f(VDS); TA=25 °C; D=0
parameter: tpparameter: tp
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-2
10-1
100
101
ID[A]
VDS [V]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-2
10-1
100
101
-ID[A]
-VDS [V]
Rev.2.2 page 6 2011-10-24
7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N)
ZthJA=f(tp)ZthJA=f(tp)
parameter: D=tp/Tparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-2
10-1
100
101
ID[A]
VDS [V]
singlepulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101102
100
101
102
103
ZthJA [K/W]
tp[s]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1 100101102
10-2
10-1
100
101
-ID[A]
-VDS [V]
singlepulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5 10-4 10-3 10-2 10-1 100101102
100
101
102
103
ZthJA [K/W]
tp[s]
Rev.2.2 page 6 2011-10-24
BSD235C
9 Typ. output characteristics (P) 10 Typ. output characteristics (N)
ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C
parameter: VGS parameter: VGS
1.8 V
2 V
2.3 V
2.5 V
3 V
3.5 V
4.5 V
10 V
0
1
2
3
4
5
012345
ID[A]
VDS [V]
1.8 V
2 V
2.3 V
2.5 V
3 V
3.5 V
4.5 V
10 V
0
1
2
3
4
5
012345
ID[A]
VDS [V]
Rev.2.2 page 7 2011-10-24
11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N)
RDS(on)=f(ID); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
1.8 V
2 V
2.3 V
2.5 V
3 V
3.5 V
4.5 V
10 V
0
1
2
3
4
5
012345
ID[A]
VDS [V]
1.8 V
2 V
2.3 V
2.5 V
3 V
3.5 V
4.5 V
10 V
0
1
2
3
4
5
012345
ID[A]
VDS [V]
2.2 V
2.5 V 3 V 3.3 V 3.5 V
4.5 V
10 V
0
200
400
600
800
1000
1200
1400
1600
1800
2000
01234
RDS(on) [mW]
ID[A]
2.2 V
2.5 V
3 V 3.3 V
3.5 V
4.5 V
10 V
0
100
200
300
400
500
600
700
0 1 2 3 4
RDS(on) [mW]
ID[A]
Rev.2.2 page 7 2011-10-24
BSD235C
13 Typ. transfer characteristics (P) 14 Typ. transfer characteristics (N)
ID=f(VGS); |VDS |>2 | ID| RDS(on)max ID=f(VGS); |VDS |>2 | ID| RDS(on)max
parameter: Tjparameter: Tj
25 °C
150 °C
0
0.25
0.5
0.75
1
0 1 2 3
ID[A]
VGS [V]
25 °C
150 °C
0
0.25
0.5
0.75
1
0 1 2 3
-ID[A]
-VGS [V]
Rev.2.2 page 8 2011-10-24
15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N)
RDS(on)=f(Tj); ID=-0.53 A; VGS=-4.5 V RDS(on)=f(Tj); ID=0.95 A; VGS=4.5 V
25 °C
150 °C
0
0.25
0.5
0.75
1
0 1 2 3
ID[A]
VGS [V]
25 °C
150 °C
0
0.25
0.5
0.75
1
0 1 2 3
-ID[A]
-VGS [V]
98%
typ
0
200
400
600
800
1000
1200
1400
1600
1800
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
typ
98%
0
100
200
300
400
500
600
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
Rev.2.2 page 8 2011-10-24
BSD235C
21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N)
IF=f(VSD)IF=f(VSD)
parameter: Tjparameter: Tj
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
-IF[A]
-VSD [V]
25 °C
150 °C
25 °C, 98%
150°C,98%
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF[A]
VSD [V]
Rev.2.2 page 9 2011-10-24
23 Avalanche characteristics (P) 24 Avalanche characteristics (N)
IAS=f(tAV); RGS=25 WIAS=f(tAV); RGS=25 W
parameter: Tj(start) parameter: Tj(start)
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
-IF[A]
-VSD [V]
25 °C
100 °C
125 °C
100101102103
10-2
10-1
100
-IAV [A]
tAV [µs]
25 °C
100 °C
125 °C
100101102103
10-2
10-1
100
IAV [A]
tAV [µs]
25 °C
150 °C
25 °C, 98%
150°C,98%
10-2
10-1
100
101
0 0.4 0.8 1.2 1.6
IF[A]
VSD [V]
Rev.2.2 page 9 2011-10-24
BSD235C
17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N)
VGS(th)=f(Tj); VGS=VDS;ID=-1.5 µA VGS(th)=f(Tj); VGS=VDS;ID=1.6 µA
2%
typ
98%
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj[°C]
typ
2%
98%
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Rev.2.2 page 10 2011-10-24
19 Typ. capacitances (P) 20 Typ. capacitances (N)
C=f(VDS); VGS=0 V; f=1 MHz C=f(VDS); VGS=0 V; f=1 MHz
Ciss
Coss
Crss
100
101
102
0 5 10 15 20
C[pF]
VDS [V]
2%
typ
98%
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj[°C]
typ
2%
98%
0
0.4
0.8
1.2
1.6
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
0 5 10 15 20
C[pF]
VDS [V]
Rev.2.2 page 10 2011-10-24
BSD235C
25 Typ. gate charge (P) 26 Typ. gate charge (N)
VGS=f(Qgate); ID=-0.53 A pulsed VGS=f(Qgate); ID=0.95 A pulsed
parameter: VDD parameter: VDD
-4 V -10 V
-16 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5 0.6
-VGS [V]
-Qgate [nC]
4 V
10 V
16 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5 0.6
VGS [V]
Qgate [nC]
Rev.2.2 page 11 2011-10-24
27 Drain-source breakdown voltage (P) 28 Drain-source breakdown voltage (N)
VBR(DSS)=f(Tj); ID=-250 µA VBR(DSS)=f(Tj); ID=250 µA
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140 180
-VBR(DSS) [V]
Tj[°C]
16
17
18
19
20
21
22
23
24
25
-60 -20 20 60 100 140
VBR(DSS) [V]
Tj[°C]
-4 V -10 V
-16 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5 0.6
-VGS [V]
-Qgate [nC]
4 V
10 V
16 V
0
1
2
3
4
5
6
0 0.1 0.2 0.3 0.4 0.5 0.6
VGS [V]
Qgate [nC]
Rev.2.2 page 11 2011-10-24
BSD235C
SOT-363
Package Outline:
Footprint:
Packing:
Reflow soldering:
Dimensions in mm
Rev.2.2
page 12 2011-10-24
BSD235C
Published by
Rev.2.2 page 13 2011-10-24
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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For further information on technology, delivery terms and conditions and prices, please
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Rev.2.2 page 13 2011-10-24