1. Product profile
1.1 General description
NPN medium power transistor series.
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
nHigh current
nTwo current gain selections
nHigh power dissipation capability
1.3 Applications
nLinear voltage regulators
nLow-side switches
nMOSFET drivers
nAmplifiers
1.4 Quick reference data
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
Rev. 07 — 25 June 2007 Product data sheet
Table 1. Product overview
Type number[1] Package PNP complement
NXP JEITA JEDEC
BC637[2] SOT54 SC-43A TO-92 BC638
BCP55 SOT223 SC-73 - BCP52
BCX55 SOT89 SC-62 TO-243 BCX52
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 60 V
ICcollector current - - 1 A
ICM peak collector current single pulse; tp≤1 ms - - 1.5 A
hFE DC current gain VCE =2V; I
C= 150 mA 63 - 250
hFE selection -10 VCE =2V; I
C= 150 mA 63 - 160
hFE selection -16 VCE =2V; I
C= 150 mA 100 - 250
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 2 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 base
2 collector
3 emitter
SOT54A
1 base
2 collector
3 emitter
SOT54 variant
1 base
2 collector
3 emitter
SOT223
1 base
2 collector
3 emitter
4 collector
SOT89
1 emitter
2 collector
3 base
001aab347
1
2
3
sym056
2
3
1
001aab348
1
2
3
sym056
2
3
1
001aab447
1
2
3
sym056
2
3
1
132
4
sym016
2, 4
3
1
321
sym042
1
2
3
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 3 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
3. Ordering information
[1] Valid for all available selection groups.
[2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 4. Ordering information
Type number[1] Package
Name Description Version
BC637[2] SC-43A plastic single-ended leaded (through hole) package;
3 leads SOT54
BCP55 SC-73 plastic surface-mounted package with increased
heatsink; 4 leads SOT223
BCX55 SC-62 plastic surface-mounted package; collector pad for good
heat transfer; 3 leads SOT89
Table 5. Marking codes
Type number Marking code
BC637 C637
BC637-16 C63716
BCP55 BCP55
BCP55-10 BCP55/10
BCP55-16 BCP55/16
BCX55 BE
BCX55-10 BG
BCX55-16 BM
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 4 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V
ICcollector current - 1 A
ICM peak collector current single pulse;
tp≤1ms - 1.5 A
IBM peak base current single pulse;
tp≤1ms - 0.2 A
Ptot total power dissipation Tamb ≤25 °C
BC637 [1] - 0.83 W
BCP55 [1] - 0.64 W
[2] - 0.96 W
BCX55 [1] - 0.5 W
[2] - 0.85 W
[3] - 1.25 W
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 5 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint (1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curve SOT54 Fig 2. Power derating curves SOT223
(1) FR4 PCB, mounting pad for collector 6 cm2
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 3. Power derating curves SOT89
Tamb (°C)
−75 17512525075−25
006aaa085
0.8
0.4
1.2
1.6
Ptot
(W)
0
Tamb (°C)
−75 17512525075−25
006aaa086
0.8
0.4
1.2
1.6
Ptot
(W)
0
(1)
(2)
Tamb (°C)
−75 17512525075−25
006aaa087
0.8
0.4
1.2
1.6
Ptot
(W)
0
(1)
(2)
(3)
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 6 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air
BC637 [1] - - 150 K/W
BCP55 [1] - - 195 K/W
[2] - - 130 K/W
BCX55 [1] - - 250 K/W
[2] - - 145 K/W
[3] - - 100 K/W
Rth(j-sp) thermal resistance from
junction to solder point
BC637 - - 40 K/W
BCP55 - - 17 K/W
BCX55 - - 30 K/W
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT54;
typical values
006aaa088
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
10
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 7 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 6. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT223;
typical values
006aaa814
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
006aaa089
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
10
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 8 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
FR4 PCB, standard footprint
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
FR4 PCB, mounting pad for collector 1 cm2
Fig 8. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa815
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
006aaa090
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
10
duty cycle =
10.75
0.5 0.33
0.2
0.1
0.05
0.02
0.01
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 9 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
7. Characteristics
[1] Pulse test: tp≤300 µs; δ= 0.02.
FR4 PCB, mounting pad for collector 6 cm2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
006aaa816
10
1
102
103
Zth(j-a)
(K/W)
10−1
10−51010−2
10−4102
10−1tp (s)
10−3103
1
duty cycle =
0.01
0
0.02
0.05
0.1
0.2
0.33
0.5
0.75
1.0
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =30V; I
E= 0 A - - 100 nA
VCB =30V; I
E=0A;
Tj= 150 °C--10µA
IEBO emitter-base cut-off
current VEB =5V; I
C= 0 A - - 100 nA
hFE DC current gain VCE =2V
IC= 5 mA 63 - -
IC= 150 mA 63 - 250
IC= 500 mA [1] 40 - -
DC current gain VCE =2V
hFE selection -10 IC= 150 mA 63 - 160
hFE selection -16 IC= 150 mA 100 - 250
VCEsat collector-emitter
saturation voltage IC= 500 mA; IB=50mA [1] - - 500 mV
VBE base-emitter voltage VCE =2V; I
C= 500 mA [1] --1V
Cccollector capacitance VCB =10V;I
E=i
e=0A;
f=1MHz -6-pF
fTtransition frequency VCE =5V; I
C=50mA;
f = 100 MHz 100 180 - MHz
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 10 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
VCE =2V
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 10. DC current gain as a function of collector
current; typical values Fig 11. Collector current as a function of
collector-emitter voltage; typical values
VCE =2V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 150 °C
IC/IB=10
(1) Tamb = 150 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa080
100
200
300
hFE
0
IC (mA)
10−1104
103
110
2
10
(1)
(2)
(3)
VCE (V)
0 2.01.60.8 1.20.4
006aaa084
0.8
0.4
1.2
1.6
IC
(A)
0
25
20
15
10
5
IB (mA) = 50 45 40 35 30
006aaa081
0.4
0.8
1.2
VBE
(V)
0
IC (mA)
10−1104
103
110
2
10
(1)
(2)
(3)
006aaa082
10−1
1
VCEsat
(V)
10−2
IC (mA)
10−1104
103
110
2
10
(1)
(2) (3)
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 11 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
8. Package outline
Fig 14. Package outline SOT54 (SC-43A/TO-92) Fig 15. Package outline SOT54A
Fig 16. Package outline SOT54 variant Fig 17. Package outline SOT223 (SC-73)
Fig 18. Package outline SOT89 (SC-62/TO-243)
04-11-16Dimensions in mm
5.2
5.0 14.5
12.7
4.8
4.4
4.2
3.6 0.45
0.38
0.48
0.40
1.27 2.54
3
2
1
04-06-28Dimensions in mm
5.2
5.0 14.5
12.7
4.8
4.4
4.2
3.6 0.45
0.38
0.48
0.40
2.54
5.08
3 max
3
2
1
05-01-10Dimensions in mm
5.2
5.0 14.5
12.7
4.8
4.4
4.2
3.6
0.45
0.38
0.48
0.40
1.27
1.27
2.54
2.5
max
3
2
1
04-11-10Dimensions in mm
6.7
6.3
3.1
2.9
1.8
1.5
7.3
6.7 3.7
3.3
1.1
0.7
132
4
4.6
2.3 0.8
0.6 0.32
0.22
06-08-29Dimensions in mm
4.6
4.4
1.8
1.4
1.6
1.4
1.2
0.8
3
1.5 0.48
0.35 0.44
0.23
0.53
0.40
2.6
2.4 4.25
3.75
123
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 12 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
9. Packing information
[1] For further information and the availability of packing methods, see Section 12.
[2] Valid for all available selection groups.
[3] T1: normal taping
[4] T3: 90° rotated taping
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number[2] Package Description Packing quantity
1000 4000 5000 10000
BC637 SOT54 bulk, straight leads - - -412 -
SOT54A tape and reel, wide pitch - - - -116
tape ammopack, wide pitch - - - -126
SOT54 variant bulk, delta pinning - - -112 -
BCP55 SOT223 8 mm pitch, 12 mm tape and reel -115 -135 - -
BCX55 SOT89 8 mm pitch, 12 mm tape and reel; T1 [3] -115 -135 - -
8 mm pitch, 12 mm tape and reel; T3 [4] -120 - - -
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 13 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BC637_BCP55_BCX55_7 20070625 Product data sheet - BC637_BCP55_BCX55_6
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Table 1 “Product overview”: amended
•Section 1.2 “Features”: amended
•Section 1.3 “Applications”: amended
•Table 2 “Quick reference data”: IC parameter redefined to collector current
•Table 2 “Quick reference data”: ICM condition added
•Figure 2 and 3: amended
•Table 6 “Limiting values”: IC parameter redefined to collector current
•Table 6 “Limiting values”: ICM condition added
•Table 6 “Limiting values”: Ptot values for BCP55 and BCX55 adapted
•Table 7 “Thermal characteristics”: Rth(j-a) values for BCP55 and BCX55 rounded
•Figure 4: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient
•Figure 4: tp parameter redefined to pulse duration
•Figure 5: added
•Figure 6: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient
•Figure 6: tp parameter redefined to pulse duration
•Figure 7: added
•Figure 8: Zth redefined to Zth(j-a) transient thermal impedance from junction to ambient
•Figure 8: tp parameter redefined to pulse duration
•Figure 9: added
•Figure 11: amended
•Table 9 “Packing methods”: new packing method for BCX55 added
•Section 11 “Legal information”: updated
BC637_BCP55_BCX55_6 20050218 Product data sheet CPCN200405029 BC635_637_639_4
BCP54_55_56_5
BCX54_55_56_4
BC635_637_639_4 20011010 Product specification - BC635_637_639_3
BCP54_55_56_5 20030206 Product specification - BCP54_55_56_4
BCX54_55_56_4 20011010 Product specification - BCX54_55_56_3
BC637_BCP55_BCX55_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 25 June 2007 14 of 15
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 June 2007
Document identifier: BC637_BCP55_BCX55_7
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 6
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
9 Packing information. . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
