T8C O7T794 ' TGF 148-600>1200 Z, B FAST SWITCHING THYRISTORS THYRISTORS RAPIDES SGR designed for high frequency power switching applications. VoRM = VRAM up to 1200 V. @ Glass passivated chips. @ High stability and rellability. @ High di/dt and dv/dt ratings. @ Excellent surge capability. Thyristors concus pour des applications de puissance hautes frquences. Vorm= Varo iusqua 1200 V. @ Pastilles glassives. @ Grande stabilit des caractristiques. @ di/dt et dv/dt levs. @ Excellente tenue en surcharge. oho IT(RMS) = 63 A/ Tcase = 65C VpRM 600V< = VRAM with suffix Z with auffix B <= 1200V tq< 30 ps < 40 ps Case - +0 65 metal (CB-269) Boitier ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION Symbo! Value Unit RMS on-state current* Courant efficace a Itat passant* f 63 A T(RMS) @ Tease = 68C Mean on-state current* Courant moyen a Itat passant* Hw 40 A my @Tcase = 65C Non repetitive surge peak on-state current** Courant non rptitif de surcharge crte accidentelle a l'tat passant** 700 (t= 8,3ms) A 670 (t=10 ms) A @T; < 125C ITSM TSM (2 t for fusing Valeur de la constante [2t 2t 2245. (t=10 Aes ms) @Tj < 125C Critical rate of rise of on-state current*** Vitesse critique de croissance du courant a I'tat passant*** di/dt 200 A/ps Storage and operating junction temperatures Tempratures extrmes de stockage et de jonction en fonctionnement Tst 40, + 150 C Tj 40, 1 125 C TGF 148- 600 Z, B TGF 148- @Tj= 125C 700 2, B TGF 148- 800 Z, B TGF 148- 1000 Z,B TGF 148- 1200 Z, B TGF 148- 1100 Z,B TGF 148- 900Z,B 600 700 VoRM = VRRM () 800 900 1000 1100 1200 Therma! resistances Rsistances thermiques Symbol Value Unit Junction to case for D.C. Jonction-boltier en continu Contact (case to heatsink) Contact (boitier-radiateur) Rth (j-) 0,61 C/W Rih (c-h) 0,30 C/W * Single phase circuit, 180 conduction angle * Circuit monophas, angle de conduction 180 ** Half sine wave ** Demi-oride sinusoidale *** Gate supply 20V/20 0 - tr < 0,1. 2s - Half sine wave of 6,3 us *** Gnrateur de gachetle Demi-sinusoide July 1984 - 1/6 THOMSON SEMICONDUCTORS 45, avenue de l'Europe - 78140 VELIZY - France Tl : 946 97.19/ Tlex : 698 866 F 231 A) 2 THOMSON COMPONENTS DS G S=-THOMSON GATE CHARACTERISTICS (Maximum values) os CARACTERISTIQUES DE GACHETTE (Valeurs maximales) 74C D I ?4e%23? OOOP749S & T TGF 148-600 Z, B ~ TGF 148-1200 : - en. ~~ F-25-17 Z, Peg = S0W (t= 500 ps) lEGM = 10A (t= 500 ys) io. VRGM =5V Peay = 2W _ - Veg = 15V (t= 500 us) ELECTRICAL CHARACTERISTICS CARACTERISTIQUES ELECTRIQUES Value . Symbol 7 Unit Test conditions min typ max lat 180 mA Tj = 25C Vp = 12V RAL = 339 tp > 20 ys VeT 3 Vv Tj = 25C Vp = 12V RL = 339 tp 2 20 us Vep 0,25 v Tj = 125C Vp = VpRM RL = 33k0 lH 200 mA Tj = 25 C ly = 05A Gate open VIM 4 Vv T= 25C ltm = 500A tp = 10ms 'DRM 12 mA Tj = 125C VpRM specified RRM 12 mA Tj = 125C VrrM specified Tj = 28C ty =500A Vp = VDRM ot 2 - HS Ig= TA dig/dt =10 A/us 30 FOR SUFFIX Z Tj = 125C It = 150 A VR=50V tg BS dv/dt = 20 V/ns Vp = 0,67 VpRM 40 FOR SUFFIX B dig/dt = 30 A/ps Gate open dv/dt* 200 Vins Tj = 125 C Linear slope up to 0,67 VpRM specified Gate open * For higher guaranteed values, please consult us. CASE DESCRIPTION DESCRIPTION DU BOITIER B38 min w Cooling method : by conduction @1,8min K (method C) . Marking : type number Weight: 19 g without accessories G Polarity : anode to case acy Stud torque: 3,5 m A Nmin-3,8 m A Nmax x 2 16,5 mox 6 : . o x 3G E ats ws 11/16 over flais 6 sided To Spans IT 16 sur plats A xT a - Oe E _ oO . Sic N 174 - 28 UNF | TO 65 metal (CB-269) 2/6 - 232 THOMSON SEMICONDUCTORSS G S-THOMSON ?ac D ?1eI4e3? OOOP?Ib T i : TGF 148-600 Z, B ~ TGF 148-1200 Z, B > SINUSOIDAL CURRENT PULSE DATA Y~2S7/7 PARAMETER : Itm (A) 1000 800 600 400 - 300 200 150 100 70 50 403 10 ENERGY PER PULSE, Eq {mJ) 4 40 102 403 . PULSE WIOTH, tp (ps) FIG.4 - ENERGY PEA PULSE FOR SINUSDIDAL PULSES. 103 PARAMETER : F (Hz) 400 cecaaaied 1000 2500 5000 402 10000 Ttm PEAK ON-STATE CURRENT, Iqy (A) 40 402 403 PULSE WIDTH, tp (ps) FIG.2 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS - PULSE WIDTH FOR T, = 65 C. : 408 PARAMETER : F (Hz) 100 400 4600 NOTES : 2500 4. Vp = VR = 600 Volts. 5000 2. A.C Snubber, C = 0.4pF, 40000 402 : Reason. PEAK ON-STATE CURRENT, Try (A) 402 4 PULSE WIDTH, tp (ps) FIG.3 - MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VERSUS PULSE WIDTH FORA Tg = 80 C. 10 THOMSON SEMICONDUCTORS 233S G S-THOMSON . 2ac > ff zse9237 oo07757 1 ff . TGF 148-600 Z, B - TGF 148-1200 Z, B Foep5 0 . TRAPEZOIDAL CURRENT PULSE DATA 4% ~=2-777 PARAMETER : T ty (A) 41000 B00 600 400 300 200 150 100 70 50 403 10 ENERGY PER PULSE, Ep (mJ) 4 40 402 403 PULSE WIDTH, tp (ps) FIG.4 ~ ENERGY PER PULSE FOR TRAPEZOIDAL PULSES. 109 PARAMETER : F (Hz) 100 di/dt = 100 A/ps 400 1000 2500 5000 402 di/dt Itm PEAK ON-STATE CURRENT, Ity (Al 40 402 403 PULSE WIOTH, tp (ys) FIG.5 - MAXIMUM ALLOWABLE PEAK: ON-STATE CURRENT VERSUS PULSE WIOTH FOA Ty = 65 C. 409 PARAMETER F (Hz) 400 400 4000 NOTES : 2500 1, Vp = Vp = 600 Volts. 2. A.C Snubber, C = 0.4pF, 2 10 R= 390. PEAK ON-STATE CURRENT, Iq (A) 40 402 403 PULSE WIDTH, ty (ps) FIG.6 - MAXIMUM ALLOWABLE PEAK ON~STATE CURRENT VERSUS PULSE WIDTH FOR T, = 80 C. 4/6 THOMSON SEMICONDUCTORS 234< ; G S-THOMSON Pac D ?9e%e37 0007794 3 El TGF 148-600 Z, B > TGF 148-1200Z, B T8C O7T798 D 403 5000 ca - = & = Ttsm YR = 0 0 = 2 Itsm Ya = VanM mo ie " e . = ae i ti 640 fag & a3 iM = 3 ww wy E b Y) i + 1 YY & 10 a , 2 a= 4000 = FOR Loss a ~ z CALCULATIONS u 2 Ps ~ ~~ 9 USE : BE / te LI H v ce =| ~ AY VTo = 4,85 v aa ~ _ qar . PT = 4.39 ma As. 500 0 4-2 #3 4 #5 8 4 2 5 40 INSTANTANEOUS ON~STATE VOLTAGE, V7 {V) . PULSE BASE WIDTH, t (ms) FIG.7 - MAXIMUM ON-STATE CONDUCTION . FIG.8 - NON REPETITIVE SUB-CYCLE SURGE CHARACTERISTIC (Ty = 425 C). ON-STATE CURRENT AND I@t RATING (INITIAL Ty = 425 C). a 800 # INITIAL Ty < 425 C ft Ee wo - Z _ 800 %= Lut as w 2 o et 400 ay wa Ae FS Ho tf; 200 Qa ly c Za a = 0 4 40 402 403 * NUMBER OF CYCLES (at 50 Hz) FIG.S - NON REPETITIVE SURGE PEAK ON-STATE CURRENT VERSUS NUMBER OF CYCLES. 5/6 THOMSON SEMICONDUCTORS 235S G S-THOM: THOMSON 2ac p Pp za29237 co07799 5 i TGF 148-600 Z, B - TGF 148-1200 Z, B _ 78C OT799 D ft, 7- IS-/7 ower we er ce a e ao << Le wo a 4.5 a a. et bE a 2 = 4 ~40 -20 0 . +25 ~ JUNCTION TEMPERATURE, Ty (C) . FIG.40 - RELATIVE VARIATION OF GATE TAIGGEA CURRENT AND HOLDING CURRENT VEASUS JUNCTION TEMPERATURE. 400 = = . o 10 > ul o << Ee al oO > w 4 a a o Ty = - 40 i Ty 2+ 25C i Ty = +425 C 0.4 0.04 0.4 4 20 GATE CURRENT, Ig (A) FIG.44 - GATE TRIGGER CHARACTERISTICS. 4 4074 4072 . 4073 4072s gt4 4 40 TIME, t (s) FIG.42 - TRANSIENT THERMAL IMPEDANCE JUNCTION TO CASE. TRANSIENT THERMAL IMPEDANCE, Zep, (C/W) 6/6 THOMSON SEMICONDUCTORS 236