2SB1302 Ordering number : EN2555B SANYO Semiconductors DATA SHEET 2SB1302 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications * DC-DC converters, motor drivers, relay drivers, lamp drivers. Features * * * * * Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC's. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol Conditions Ratings Unit VCBO VCEO --25 --20 V VEBO IC --5 V --5 A ICP PC Junction Temperature Tj Storage Temperature Tstg Mounted on a ceramic board (250mm20.8mm) V --8 A 1.3 W 150 C --55 to +150 C Marking : BJ Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 31710EA TK IM / 10904TN (KT)/O1598HA (KT)/D2680MO/4097TA, TS No.2555-1/4 2SB1302 Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO hFE1 DC Current Gain Gain-Bandwidth Product hFE2 fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitterr Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Storage Time ton tstg Fall Time tf *: The 2SB1302 is classified by 500mA hFE as follows: Rank R S hFE 100 to 200 Package Dimensions unit : mm (typ) 7007B-004 140 to 280 Ratings Conditions min typ VCB=--20V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--500mA VCE=--2V, IC=--4A Unit max 100* --500 nA --500 nA 400* 60 VCE=--5V, IC=--200mA VCB=--10V, f=1MHz 320 MHz 60 IC=--3A, IB=--60mA IC=--3A, IB=--60mA IC=--10A, IE=0A IC=--1mA, RBE= pF --250 --500 --1.0 --1.3 --25 IE=--10A, IC=0A See specified Test Circuit. mV V V --20 V --5 V 40 ns See specified Test Circuit. 200 ns See specified Test Circuit. 10 ns T 200 to 400 Switching Time Test Circuit IB1 PW=20s D.C.1% INPUT OUTPUT IB2 VR RB RL 50 + 100F VBE=5V + 470F VCC= --10V IC=10IB1= --10IB2= --2A No.2555-2/4 2SB1302 IC -- VCE From top --100mA --90mA --80mA --70mA --60mA --4 IC -- VCE --5 -- 50mA A --30mA --3 --20mA --2 --10mA --4 --25mA --20mA --3 --15mA --2 --10mA --5mA --1 --1 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 IB=0mA 0 0 --1.0 --1 Collector-to-Emitter Voltage, VCE -- V ITR09567 --2 --3 --4 --5 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --6 VCE= --2V 7 --5 ITR09568 hFE -- IC 1000 VCE= --2V 5 --3 --2 --25C Ta=75 C --4 DC Current Gain, hFE 25C Collector Current, IC -- A --35mA --30mA m --40 --40mA Collector Current, IC -- A Collector Current, IC -- A --5 3 Ta=75C 2 25C --25C 100 7 5 --1 3 0 0 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 7 5 7 --10 ITR09570 Cob -- VCB 3 VCE= --5V f=1MHz 2 Output Capacitance, Cob -- pF Gain-Brandwidth Product, f T -- MHz 7 --0.01 ITR09569 f T -- IC 1000 5 3 2 100 7 100 7 5 3 2 5 3 7--0.01 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 --100 7 5 Ta= --25C 25C 75C 2 3 ITR09572 VBE(sat) -- IC --10 IC / IB=50 2 7 --10 7 --1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 5 ITR09571 7 3 3 7 --10 VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1.4 IC / IB=50 7 5 3 2 --1.0 Ta= --25C 7 25C 5 75C 3 --10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09573 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 ITR09574 No.2555-3/4 2SB1302 ASO 2 ICP= --8A --10 1.4 Collector Dissipation, PC -- W IC= --5A 3 s 1m s m 10 ms 0 10 Collector Current, IC -- A 7 5 2 DC --1.0 7 op era tio 5 n 3 2 Ta=25C Single pulse Mounted on a ceramic board (250mm20.8mm) --0.1 7 5 2 3 5 PC -- Ta 1.8 7 --1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V M 1.2 ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d( 25 0m m2 0 0.4 .8m m 0.2 2 3 ITR09575 0 0 ) 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 160 ITR09576 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2010. Specifications and information herein are subject to change without notice. PS No.2555-4/4