BCX68-16 Not Recommended for New Design, Please Use BCX68-25 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BCX68 ISSUE 3 - FEBRUARY 2007 FEATURES * High gain and low saturation voltages C COMPLEMENTARY TYPE - BCX69 PARTMARKING DETAIL - BCX68 - CE BCX68-16 - CC BCX68-25 - CD E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO 25 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 2 A Continuous Collector Current IC 1 A Power Dissipation at T amb=25C P tot Operating and Storage Temperature Range T j:T stg 1 W -65 to +150 C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown voltage V (BR)CBO 25 V I C =100A Collector-Emitter Breakdown Voltage V (BR)CEO 20 V I C =10mA Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E =100A Collector Cut-Off Current I CBO 0.1 10 A A V CB =25V V CB =25V, T a =150C Emitter Cut-Off Current I EBO 10 A V EB =5V Collector-Emitter Saturation Voltage V CE(sat) 0.5 V I C =1A, I B =100mA* Base-Emitter Turn-On Voltage V BE(on) 1.0 V I C =1A, V CE =1V* Static Forward Current Transfer Ratio h FE 50 85 60 BCX68-16 100 BCX68-25 160 Transition Frequency fT Output Capacitance C obo TYP. MAX. UNIT IC IC IC IC IC 375 250 250 400 100 25 CONDITIONS. MHz I C =100mA, V CE =5V, f=100MHz pF V CB =10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT449 datasheet. 3 - 36 =5mA, V CE =10V =500mA, V CE =1V =1A, V CE =1V* =500mA, V CE =1V* =500mA, V CE =1V BCX68-16 Not Recommended for New Design, Please Use BCX68-25 BCX68 Characteristics Note: (a) Measured on a 15mm x 15mm x 1.6mm FR4 board with a high coverage of single sided 1oz weight copper. BCX68-16 Not Recommended for New Design, Please Use BCX68-25 BCX68