© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 8
1Publication Order Number:
BC846AWT1/D
BC846, SBC846, BC847,
SBC847, BC848 Series
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 which is
designed for low power surface mount applications.
Features
•AEC−Q101 Qualified and PPAP Capable
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage
BC846, SBC846
BC847, SBC847
BC848
VCEO
65
45
30
V
Collector-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VCBO
80
50
30
V
Emitter-Base Voltage
BC846, SBC846
BC847, SBC847
BC848
VEBO
6.0
6.0
5.0
V
Collector Current − Continuous IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25°C PD150 mW
Thermal Resistance,
Junction−to−Ambient RqJA 833 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150
°C
1. FR−5 = 1.0 x 0.75 x 0.062 in.
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SC−70/SOT−323
CASE 419
STYLE 3
MARKING DIAGRAM
XX = Specific Device Code
M = Month Code
G= Pb−Free Package
(Note: Microdot may be in either location)
XX MG
G
COLLECTOR
3
1
BASE
2
EMITTER
1
2
3
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
ORDERING INFORMATION
BC846, SBC846, BC847, SBC847, BC848 Series
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage BC846, SBC846 Series
(IC = 10 mA) BC847, SBC847 Series
BC848 Series
V(BR)CEO 65
45
30
−
−
−
−
−
−
V
Collector−Emitter Breakdown Voltage BC846, SBC846 Series
(IC = 10 mA, VEB = 0) BC847, SBC847 Series
BC848 Series
V(BR)CES 80
50
30
−
−
−
−
−
−
V
Collector−Base Breakdown Voltage BC846, SBC846 Series
(IC = 10 mA) BC847, SBC847 Series
BC848 Series
V(BR)CBO 80
50
30
−
−
−
−
−
−
V
Emitter−Base Breakdown Voltage BC846, SBC846 Series
(IE = 1.0 mA) BC847, SBC847 Series
BC848 Series
V(BR)EBO 6.0
6.0
5.0
−
−
−
−
−
−
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ICBO −
−
−
−
15
5.0
nA
mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, SBC847A, BC848A
(IC = 10 mA, VCE = 5.0 V) BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, SBC847A, BC848A
BC846B, SBC846B, BC847B, SBC847B, BC848B
BC847C, SBC847C, BC848C
hFE −
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VCE(sat) −
−
−
−
0.25
0.6
V
Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
VBE(sat) −
−
0.7
0.9
−
−
V
Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
VBE(on) 580
−
660
−
700
770
mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
BC846, SBC846, BC847, SBC847, BC848 Series
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BC846A, BC847A, SBC847A, BC848A
Figure 1. DC Current Gain vs. Collector
Current
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
0.10.010.0010.0001
0
0.02
0.18
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
Figure 4. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9 IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.04
0.06
0.08
0.10
0.12
0.14
0.16
BC846, SBC846, BC847, SBC847, BC848 Series
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BC846A, BC847A, SBC847A, BC848A
Figure 5. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 6. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 7. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 8. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
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BC846B, SBC846B
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
300
400
600
0.10.010.0010.0001
0
0.15
0.30
Figure 11. Base Emitter Saturation Voltage vs.
Collector Current
Figure 12. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20 150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
500 0.25
0.20
0.05
0.10
BC846, SBC846, BC847, SBC847, BC848 Series
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BC846B, SBC846B
Figure 13. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 14. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
1.4
1.8
2.2
2.6
3.0
0.5 5.0 20 50 100
-55°C to 125°C
qVB for VBE
Figure 15. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 16. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
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BC847B, SBC847B, BC848B
Figure 17. DC Current Gain vs. Collector
Current
Figure 18. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
600
0.10.010.0010.0001
0
0.05
0.30
Figure 19. Base Emitter Saturation Voltage vs.
Collector Current
Figure 20. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
300
400
500
1.0
BC846, SBC846, BC847, SBC847, BC848 Series
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BC847B, SBC847B, BC848B
Figure 21. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 22. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 23. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 24. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
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BC847C, SBC847C, BC848C
Figure 25. DC Current Gain vs. Collector
Current
Figure 26. Collector Emitter Saturation Voltage
vs. Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.001
0
100
200
1000
0.10.010.0010.0001
0
0.05
0.30
Figure 27. Base Emitter Saturation Voltage vs.
Collector Current
Figure 28. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.1
0.10.010.0010.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
hFE, DC CURRENT GAIN
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
1
VCE = 1 V
150°C
−55°C
25°C
IC/IB = 20
150°C
−55°C
25°C
0.4
0.9
IC/IB = 20
150°C
−55°C
25°C
0.4
0.7
1.1 VCE = 5 V
150°C
−55°C
25°C
0.10
0.15
0.20
0.25
300
400
500
1.0
600
700
800
900
BC846, SBC846, BC847, SBC847, BC848 Series
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BC847C, SBC847C, BC848C
Figure 29. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 30. Base−Emitter Temperature
Coefficient
IC, COLLECTOR CURRENT (mA)
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 1.0 10 100
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 31. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 32. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846, SBC846, BC847, SBC847, BC848 Series
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1 mS
Thermal Limit
1 S
Figure 33. Safe Operating Area for
BC846A, BC846B
Figure 34. Safe Operating Area for
BC847A, BC847B, BC847C
VCE, COLLECTOR EMITTER VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V)
100101
0.001
0.01
0.1
1
1001010.1
0.001
0.01
0.1
1
Figure 35. Safe Operating Area for
BC848A, BC848B, BC848C
VCE, COLLECTOR EMITTER VOLTAGE (V)
1001010.1
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
1 mS
Thermal Limit
1 S
100 mS 10 mS
BC846, SBC846, BC847, SBC847, BC848 Series
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DEVICE ORDERING AND SPECIFIC MARKING INFORMATION
Device Specific Marking Code Package Shipping†
BC846AWT1G 1A SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC846BWT1G
1B SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
SBC846BWT1G
BC847AWT1G
1E SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
SBC847AWT1G
BC847BWT1G
1F SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
SBC847BWT1G
BC847CWT1G
1G SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
SBC847CWT1G
BC847CWT3G 1G SC−70 (SOT−323)
(Pb−Free) 10,000 / Tape & Reel
BC848AWT1G 1J SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC848BWT1G 1K SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
BC848CWT1G 1L SC−70 (SOT−323)
(Pb−Free) 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
BC846, SBC846, BC847, SBC847, BC848 Series
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PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
D
e1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L
2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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