1995. 1. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC200
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent hFE Linearity
: hFE(2)=25(Min.), (VCE=2V, IC=200mA).
ᴌComplementary to KTA200.
MAXIMUM RATING (Ta=25ᴱ)
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2 3
B
AJ
KG
H
FF
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC500 mA
Emitter Current IE-500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 ỌA
DC Current Gain
hFE(1) (Note) VCE=2V, IC=50mA 70 - 240
hFE(2) VCE=2V, IC=200mA 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA -- 0.25 V
Base-Emittter Voltage VBE VCE=2V, IC=200mA - - 1.0 V
Transition Frequency fTVCE=6V, IC=20mA - 300 - MHz
Collector Output Capacitance Cob VCB=6V, IE=0, f=1MHz - 7.0 - pF
Note : hFE Classification O:70ᴕ140, Y:120ᴕ240