AUTOMOTIVE GRADE AUIRLR2908 Features Advanced Planar Technology Logic-Level Gate Drive Low On-Resistance 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET VDSS RDS(on) ID (Silicon Limited) ID (Package Limited) AUIRLR2908 G D-Pak S D-Pak AUIRLR2908 G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type 80V 22.5m 28m 39A 30A D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications Base part number typ. max. S Source Orderable Part Number AUIRLR2908 AUIRLR2908TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 39 ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 28 ID @ TC = 25C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation 30 150 120 VGS EAS EAS (Tested) IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Units A W 0.77 16 180 250 See Fig.15,16, 12a, 12b 2.3 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- --- 1.3 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-11 AUIRLR2908 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 80 --- --- V VGS = 0V, ID = 250A --- 0.085 --- V/C Reference to 25C, ID = 1mA --- 22.5 28 VGS = 10V, ID = 23A m --- 25 30 VGS = 4.5V, ID = 20A 1.0 --- 2.5 V VDS = VGS, ID = 250A 35 --- --- S VDS = 25V, ID = 23A --- --- 20 VDS = 80V, VGS = 0V A --- --- 250 VDS = 80V,VGS = 0V,TJ =125C --- --- 200 VGS = 16V nA --- --- -200 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- 22 6.0 11 12 95 36 55 33 9.1 17 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- --- --- --- 1890 260 35 1920 170 310 --- --- --- --- --- --- Min. Typ. Max. Units --- --- 39 --- --- 150 --- --- --- --- 75 210 1.3 110 310 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Effective Output Capacitance Coss eff. Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 23A nC VDS = 64V VGS = 4.5V VDD = 40V ID = 23A ns RG = 8.3 VGS = 4.5V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 64V = 1.0MHz VGS = 0V, VDS = 0V to 64V Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 23A, VGS = 0V ns TJ = 25C ,IF = 23A, VDD = 25V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Limited by TJmax , starting TJ = 25C, L = 0.71mH, RG = 25, IAS = 23A, VGS =10V. Part not recommended for use above this value. ISD 23A, di/dt 400A/s, VDD V(BR)DSS, TJ 175C. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting TJ = 25C, L = 0.71mH, RG = 25, IAS = 23A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. R is measured at TJ approximately 90C. 2 2015-12-11 AUIRLR2908 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 2.5V 1 0.1 1 10 2.5V 10 1 0.1 0.01 0.1 BOTTOM 20s PULSE WIDTH Tj = 175C 20s PULSE WIDTH Tj = 25C 0.01 100 0.01 100 1 10 100 Fig. 2 Typical Output Characteristics Fig. 1 Typical Output Characteristics 60 G FS , Forward Transconductance (S) 1000 ID, Drain-to-Source Current ) 0.1 VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 100 T J = 175C T J = 25C 10 VDS = 25V 20s PULSE WIDTH 2 3 4 T J = 25C 50 40 T J = 175C 30 20 10 VDS = 10V 20s PULSE WIDTH 0 1 5 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 VGS 15V 10V 4.5V 4.0V 3.5V 3.0V 2.7V 2.5V 0 10 20 30 40 50 60 ID , Drain-to-Source Current (A) Fig. 4 Typical Forward Trans conductance Vs. Drain Current 2015-12-11 AUIRLR2908 100000 ID= 23A VGS , Gate-to-Source Voltage (V) Crss = Cgd Coss = Cds + Cgd 10000 C, Capacitance(pF) 5.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Ciss 1000 Coss 100 Crss 4.0 VDS = 16V 3.0 2.0 1.0 0.0 10 1 10 0 100 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 10 15 20 25 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 1000 100.00 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 5 Q G Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 10.00 T J = 25C 1.00 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 T J = 175C 100sec 10 1msec 1 10msec Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 VDS = 64V VDS = 40V 1.8 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-12-11 AUIRLR2908 40 35 ID, Drain Current (A) 30 25 20 15 10 5 0 2.5 ID = 38A VGS = 4.5V 2.0 (Normalized) RDS(on) , Drain-to-Source On Resistance 3.0 1.5 1.0 0.5 0.0 25 50 75 100 125 150 175 -60 -40 -20 0 T C , Case Temperature (C) 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-12-11 AUIRLR2908 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) 400 ID 9.3A 16A BOTTOM 23A TOP 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform VGS(th) Gate threshold Voltage (V) Id Vds 2.5 2.0 1.5 ID = 250A 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature Fig 13b. Gate Charge Test Circuit 6 2015-12-11 AUIRLR2908 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs. Pulse width Notes on Repetitive Avalanche Curves , Figures 15, 16: EAR , Avalanche Energy (mJ) 200 (For further info, see AN-1005 at www.infineon.com) TOP Single Pulse BOTTOM 10% Duty Cycle ID = 23A 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 150 100 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 50 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] Fig 16. Maximum Avalanche Energy Vs. Temperature 7 EAS (AR) = PD (ave)*tav 2015-12-11 AUIRLR2908 Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 18a. Switching Time Test Circuit 8 Fig 18b. Switching Time Waveforms 2015-12-11 AUIRLR2908 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AULR2908 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-12-11 AUIRLR2908 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 2015-12-11 AUIRLR2908 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M3 (+/- 400V) AEC-Q101-002 Class H1C (+/-1500V) AEC-Q101-001 Class C5 (+/-2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 12/11/2015 Comments Updated datasheet with corporate template Corrected ordering table on page 1. Corrected typo RJA (PCB mount) from "40C/W" to "50C/W" on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 11 2015-12-11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: AUIRLR2908 AUIRLR3110ZTRL AUIRLR2908TRR AUIRLR2908TRL