© Semiconductor Components Industries, LLC, 2001
February, 2020 − Rev. 3
1Publication Order Number:
RHRG75120/D
Hyperfast Diode
75 A, 1200 V
RHRG75120
Description
The RHRG75120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast diodes and is
silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended to be used as freewheeling / clamping
diodes and diodes in a variety of switching power supplies and other
power switching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.
Features
•Hyperfast Recovery, trr = 100 ns (@ IF = 75 A)
•Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
•1200 V Reverse Voltage and High Reliability
•Avalanche Energy Rated
•This Device is Pb−Free and is RoHS Compliant
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1200 V
Working Peak Reverse Voltage VRWM 1200 V
DC Blocking Voltage VR1200 V
Average Rectified Forward Current
@ TC = 42°C
IF(AV) 75 A
Repetitive Peak Surge Current
(Square Wave, 20 kHz)
IFRM 150 A
Non−Repetitive Peak Surge Current
(Halfwave, 1 Phase, 60 Hz)
IFSM 500 A
Maximum Power Dissipation PD190 W
Avalanche Energy (See Figures 7 and 8) EAVL 50 mJ
Operating and Storage Temperature TJ, TSTG −65 to
+175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Parameter Symbol Value Unit
Maximum Thermal Resistance, Junction
to Case
RqJC 0.8 °C/W
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TO−247−2LD
CASE 340CL
MARKING DIAGRAM
$Y&Z&3&K
RHRG75120
K
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
RHRG75120 = Specific Device Code
ANODE
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
RHRG75120
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2
PACKAGE MARKING AND ORDERING INFORMATION
Device Device Marking Package Shipping
RHRG75120 RHRG75120 TO−247−2L 450 / Tube
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
VFInstantaneous Forward Voltage
(Pulse Width = 300 ms, Duty Cycle = 2%)
IF = 75 A
IF = 75 A, TC = 150°C
−
−
−
−
3.2
2.6
V
IRInstantaneous Reverse Current VR = 1200 V
VR = 1200 V, TC = 150°C
−
−
−
−
250
2
mA
mA
Trr Reverse Recovery Time (See Figure 6),
Summation of ta + tb
IF = 1 A, dIF/dt = 100 A/ms
IF = 75 A, dIF/dt = 100 A/ms
−
−
−
−
85
100
ns
taTime to Reach Peak Reverse Current
(See Figure 6)
IF = 75 A, dIF/dt = 100 A/ms−60 −ns
tbTime from Peak IRM to Projected Zero
Crossing of IRM Based on a Straight Line
from Peak IRM through 25% of IRM
(See Figure 6)
IF = 75 A, dIF/dt = 100 A/ms−25 −ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RHRG75120
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TYPICAL PERFORMANCE CURVES
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. Trr, ta and tb Curves vs. Forward Current Figure 4. Current Derating Curve
400
100
10
100.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
25°C
175°C
100°C
VF
, Forward Voltage (V)
IF
, Forward Current (A)
1000
100
10
1
0.10 200 400 600 800 1000 1200
25°C
175°C
100°C
VR, Reverse Voltage (V)
IR, Reverse Current (mA)
100
80
20
0
60
40
11080
TC = 25°C, dIF/dt = 100 A/ms
Trr
ta
tb
IF
, Forward Current (A)
t, Time (ns)
80
60
40
20
025 50 75 100 125 150 175
DC
SQ. WAVE
TC, Case Temperature (°C)
IF(AV), Average Forward Current (A)
RHRG75120
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4
TEST CIRCUITS AND WAVEFORMS
Figure 5. Trr Test Circuit Figure 6. Trr Waveforms and Definitions
Figure 7. Avalanche Energy Test Circuit Figure 8. Avalanche Current and Voltage Waveforms
L
IGBT
CURRENT
SENSE
DUT
t1
t2
+
−
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 Control IF
VGE
RG
VDD
0
IFtatb
trr
dIF
dt
0.25 IRM
IRM
DUT
CURRENT
SENSE
+
−
IMAX = 1.6 A
L = 40 mH
R < 0.1 W
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) − VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)
VDD
VDD
Q1
LR
VAVL
IL
IL
IV
t0t1t
t2
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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