2SK3492
No.8279-1/4
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID8A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 32 A
Allowable Power Dissipation PD1W
Tc=25°C15W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0V 1 µA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=4A 3 5 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=4A, VGS=10V 115 150 mΩ
RDS(on)2 ID=4A, VGS=4V 155 220 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 300 pF
Output Capacitance Coss VDS=20V, f=1MHz 54 pF
Reverse T ransfer Capacitance Crss VDS=20V, f=1MHz 34 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns
Rise Time trSee specified Test Circuit. 32 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 30 ns
Fall T ime tfSee specified Test Circuit. 44 ns
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8279
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005PA MS IM TA-100862
2SK3492 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3492
No.8279-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Total Gate Charge Qg VDS=30V, VGS=10V, ID=8A 7.8 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=8A 2.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=8A 1.7 nC
Diode Forward Voltage VSD IS=8A, VGS=0V 0.9 1.2 V
Package Dimensions Package Dimensions
unit : mm unit : mm
7518-004 7003-004
Switching Time Test Circuit
6.5
5.0 2.3 0.5
12
4
3
0.85
0.7 1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8 5.5 1.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
ID -- VGS
ID -- VDS
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
1
2
3
4
5
6
7
8
0123456
0
IT09598 IT09599
0 0.20.1 0.4 0.80.6 1.0 1.2 1.40.3 0.5 0.90.7 1.1 1.3 1.5
1
2
4
6
3
5
7
8
0
VGS=3.5V
Ta=75°C
Ta= --25°C
--25°C
25°C
25°C
75°C
VDS=10V
4.0V
16.0V
6.0V
10.0V
5.0V
8.0V
PW=10µs
D.C.≤1%
10V
0V
VIN
P.G 50Ω
G
S
ID=4A
RL=7.5Ω
VDD=30V
VOUT
VIN
D
2SK3492
6.5
5.0
2.3 0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SK3492
No.8279-3/4
A S O
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
IS -- VSD
yfs-- ID
SW Time -- ID
Drain Current, ID -- A
Forward T ransfer Admittance,
y
fs -- S
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- pF
RDS(on) -- Ta
RDS(on) -- VGS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, VGS -- V
1
0
2
3
4
5
6
7
8
9
10
012345678
0 5 10 15 20 25 30
2
2
100
7
5
3
7
5
3
0.1 23 57
1.0 23 57
10
2
2
10
100
7
5
3
7
5
3
1.0
10
2
0.1
2
7
5
3
2
1.0
7
5
3
7
5
3
0.01
IT09602 IT09603
IT09605
0.01 23 57
0.1 23 57
1.0 23 57
10 0.2 0.4 0.6 0.8 1.0 1.2
IT09604
IT09607
0.01 23 57 2
0.1 357 2
1.0
10
2
0.1
2
7
5
3
7
5
3
0.01
VDS=10V
25°C
--25
°
C
VGS=0V
f=1MHz
Ciss
Crss
Coss
VDD=30V
VGS=10V
td(on)
IT09606
VDS=30V
ID=8A
td(off)
Ta=75
°
C
IDP=32A
ID=8A
DC Operation
<10µs
100µs
1ms
10ms
Operation in this
area is limited by RDS(on).
Tc=25°C
Single pulse
0.1
2
7
5
3
2
2
1.0
7
5
3
2
0.01
Ta= --25°C
25
°
C
75°C
tr
tf
100ms
357 2
10 357
100
10
7
5
3
2
7
5
3
0
50
100
150
200
250
300
350
--60 --40 --20 0 20 40 60 80 100 120 140 160
50024 86 101214161820
100
150
200
250
300
350
IT09600 IT09601
Ta=25°C
ID=4A
ID=4A, VGS=4V
ID=4A, VGS=10V
2SK3492
No.8279-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2005. Specifications and information herein are subject
to change without notice.
Note on usage : Since the 2SK3492 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
PD -- Ta PD -- Tc
Amibient Tamperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Tamperature, Tc -- °C
Allowable Power Dissipation, PD -- W
IT09609
00 20 40 60 80 100 120 140 160
5
20
15
10
IT09608
00
1.2
1.0
0.6
0.2
0.8
0.4
20 40 60 80 100 120 140 160
No heat sink