ky SGS-THOMSON MICROELECTRONICS BUX41N HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH GURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS a MOTOR CONTROL a LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX4iN is a silicon multiepitaxial planar NPN transistor in Jedec TO-3 metal case, intended for use in switching and linear applications in military and industrial equipment. INTERNAL SCHEMATIC DIAGRAM C (TAB) (1) B FO (2) SCOBB20 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vcospo |Collector-base Voltage (le = 0) 220 Vv Vcex Gollector-emitter Voltage (Vee = - 1.5V) 220 Vv VcEo Gollector-emitter Voltage (lp = 0) 160 Vv VEBO Emitter-base Voltage (Ic = 0) 7 Vv Ic Collector Current 18 A lem Collector Peak Current (tp = 10 ms) 25 A lp Base Current 3.6 A Prot Total Power Dissipation at Tease < 25 C 120 Ww Tstg Storage Temperature -65 to 200 C Tj Max Operating Junction Temperature 200 C February 1997 BUX41N THERMAL DATA Rihj-case | Thermal Resistance Junction-case Max | 1.46 Ciw | ELECTRICAL CHARACTERISTICS (Tease = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. | Max. Unit IcEo Collector Cut-off Vce = 130 V 1 mA Current (Ip = 0) lcex Collector Cut-off Vce = 220 V Vee = -1.5V 1 mA Current Tease = 125C Vce = 220 V Vee = -1.5V 5 mA lEBo Emitter Cut-off Current |Veg =5 V 1 mA {lc = 0) VceEotsus)* | Collector-Emitter lc = 200 mA 160 Vv Sustaining Voltage VEBO Emitter-Base Voltage le = 50 mA 7 Vv {lc = ) Vetsaiy* | Collector-Emitter Ic=8A p=O8A 0.5 1.2 Vv Saturation Voltage lc=12A Ip=H=l1.5A 0.75 1.6 Vv Veesai* |Base-Emitter Ic=12A Ipel15A 1.5 2 Vv Saturation Voltage hee* DC Current Gain Ic=8A Voce = 4 V 15 45 Ic=12A VceE =4 V 8 Isfo Second Breakdown VceE = 30 V t=1s 4 A Collector Current Voce = 100 V t=1s 0.27 A fr Transistor Frequency Vce = 15 V le=1A 8 MHz f = 10 MHz ton Turn-on Time lc=12A Ip, = 1.5A 0.35 1.3 ps Veco =30V ts Storage Time Ic=12A lpi =- Ip2 = 1.5 A 0.85 1.5 ls tt Fall Time Voc = 30V 0.14 0.8 hs Clamped Es/p Velamp= 160 V 12 A Collector Current L = 500 wH * Pulsed: Pulse duration = 300us, dutycycle <2 % 2/4 ir SGS-THOMSON Y/ WsichosLectRomics BUX41N TO-3 (H) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 11.7 0.460 B 0.96 1.10 0.037 0.043 Cc 1.70 0.066 D 8.7 0.342 E 29.0 0.787 G 10.9 0.429 N 16.9 0.665 P 26.2 1.031 R 3.88 4.09 0.152 0.161 U 39.50 1.555 V 30.10 1.185 p A D G c CY | a | = ' C3) , 7 i _. 7 0 = o . | a | WG P POO3N SGS-THOMSON 34 ky HICRGELECTRONICS BUX41N 4/4 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specitications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMS ON Microelectronics products are notauthorized tor use as critical components inlife support devices or systems without express written approvalof SGS-THOMSON Micreelectonics. 1997 SGS-THOMSCN Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSCN Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy- Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A AYP esouscreones