Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Maximum rated values 1) Parameter Collector-emitter voltage Symbol Conditions VCES VGE = 0 V, Tvj min 25 C max Unit 3300 V DC collector current IC TC = 100 C, Tvj = 150 C 250 A Peak collector current ICM tp = 1 ms 500 A Gate-emitter voltage VGES Total power dissipation Ptot DC forward current 20 V TC = 25 C, Tvj = 150 C -20 2450 W 250 A Peak forward current IFRM tp = 1 ms 500 A Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave 2250 A IGBT short circuit SOA tpsc 10 s Isolation voltage Visol Junction temperature Tvj Junction operating temperature IF VCC = 2500 V, VCEM CHIP VGE 15 V, Tvj 3300 V 150 C 1 min, f = 50 Hz 6000 V 150 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg C Mounting torques 2) 1) 2) -50 125 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M6 screws 4 6 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm IGBT characteristic values 3) Parameter Symbol Collector (-emitter) breakdown voltage Collector-emitter saturation voltage 4) Conditions min V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 C 3300 VCE sat IC = 250 A, VGE = 15 V typ Gate leakage current Gate-emitter threshold voltage ICES IGES VGE(TO) Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current 3) 4) td(on) tr td(off) tf Eon Eoff ISC Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level 2 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 VCE = 3300 V, VGE = 0 V VCE = 0 V, VGE = Tvj = 25 C 2.5 2.9 V Tvj = 125 C 3.1 3.4 V Tvj = 150 C 3.25 0.17 mA Tvj = 125 C 3.5 Tvj = 150 C 17 20 V, Tvj = 125 C IC = 40 mA, VCE = VGE, Tvj = 25 C IC = 250 A, VCE = 1800 V, VGE = -15 V ..15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1800 V, IC = 250 A, RG = 10 , CGE = 0 nF, VGE = 15 V, L = 400 nH, inductive load VCC = 1800 V, IC = 250 A, RG = 10 , CGE = 0 nF, VGE = 15 V, L = 400 nH, inductive load VCC = 1800 V, IC = 250 A, RG = 10 , CGE = 0 nF, VGE = 15 V, L = 400 nH, inductive load VCC = 1800 V, IC = 250 A, RG = 10 , CGE = 0 nF, VGE = 15 V, L = 400 nH, inductive load tpsc 10 s, VGE = 15 V, VCC = 2500 V, VCEM CHIP 3300 V Unit V Tvj = 25 C Collector cut-off current max V 7 mA mA -500 500 nA 5 7 V 1.8 C 25.2 nF 2.1 nF 0.64 nF Tvj =25 C 445 ns Tvj =125 C 450 ns Tvj =150 C 455 ns Tvj =25 C 195 ns Tvj =125 C 200 ns Tvj =150 C 210 ns Tvj =25 C 1160 ns Tvj =125 C 1330 ns Tvj =150 C 1370 ns Tvj =25 C 260 ns Tvj =125 C 330 ns Tvj =150 C 360 ns Tvj =25 C 360 mJ Tvj =125 C 460 mJ Tvj =150 C 515 mJ Tvj =25 C 330 mJ Tvj =125 C 445 mJ Tvj =150 C 480 mJ Tvj =150 C 1090 A Diode characteristic values 5) Parameter Forward voltage Symbol 6) VF Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 6) min IF = 250 A Irr Recovered charge 5) Conditions VCC = 1800 V, IF = 250 A, VGE = 15 V, RG = 10 , CGE = 0 nF, di/dt = 1 kA/s L = 400 nH, inductive load Erec typ max Unit Tvj =25 C 2.05 2.5 V 2.6 Tvj =125 C 2.25 Tvj =150 C 2.2 V V Tvj =25 C 280 A Tvj =125 C 320 A Tvj =150 C 330 A Tvj =25 C 170 C Tvj =125 C 270 C Tvj =150 C 320 C Tvj =25 C 1160 ns Tvj =125 C 1580 ns Tvj =150 C 1830 ns Tvj =25 C 180 mJ Tvj =125 C 310 mJ Tvj =150 C 370 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 7) Parameter Symbol IGBT thermal resistance junction to case Diode thermal resistance junction to case IGBT thermal resistance Conditions min max Unit Rth(j-c)IGBT 0.051 K/W Rth(j-c)DIODE 0.102 K/W 2) case to heatsink Diode thermal resistance case to heatsink Rth(c-s)IGBT IGBT per switch, Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 0.048 K/W 0.096 K/W 2) Comparative tracking index CTI Module stray inductance L grease = 1W/m x K > 600 125 CE TC =25 C Resistance, terminal-chip 2) typ RCC'+EE' nH 0.78 TC =125 C 1.03 TC =150 C 1.09 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da Surface creepage distance ds Mass m 7) Package and mechanical properties according to IEC 60747 - 15 3 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 min according to IEC 60664-1 Term. to base: 35 and EN 50124-1 Term. to term: 19 Term. to base: 64 C1 to E1: 54 C1 to E2: 78 according to IEC 60664-1 and EN 50124-1 typ 73 x 140 x 48 max Unit mm mm mm 620 g Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 4 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 500 500 450 450 VCE = VGE 400 400 25 C 350 350 300 125 C IC [A] IC [A] 300 250 150 C 250 200 200 150 150 100 100 50 50 125 C 150 C 25 C VGE = 15 V 0 0 0 1 2 3 4 5 5 6 7 8 VCE [V] Fig. 1 Typical on-state characteristics, chip level Fig. 2 500 10 11 19 V 17 V 400 13 Typical transfer characteristics, chip level 450 19 V 400 17 V 350 15 V 300 13 V 15 V 350 13 V IC [A] 300 250 200 250 200 11 V 11 V 150 150 100 9V 100 9V 50 50 Tvj = 150 C Tvj = 25 C 0 0 0 1 2 3 4 5 0 VCE [V] Fig. 3 12 500 450 IC [A] 9 VGE [V] Typical output characteristics, chip level 5 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 1 2 3 4 VCE [V] Fig. 4 Typical output characteristics, chip level 5 6 1.6 1.6 VCC = 1800 V VGE = 15 V RG = 10 ohm L = 400 nH 1.4 1.2 1.2 1.0 1.0 Eon, Eoff [J] Eon, Eoff [J] 1.4 VCC = 1800 V IC = 250 A VGE = 15 V L = 400 nH 0.8 Eon 0.6 Eon 0.8 Eoff 0.6 Eoff 0.4 0.4 0.2 0.2 Tvj = 125 C Tvj = 150 C 0.0 Tvj = 125 C Tvj = 150 C 0.0 0 250 500 0 10 20 IC [A] Fig. 5 40 50 60 70 RG [ohm] Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1800 V IC = 250 A VGE = 15 V Tvj = 125 C L = 400 nH td(off) 1 tf td(on), tr, td(off), tf [s] td(on), tr, td(off), tf [s] 30 td(on) td(off) td(on) 1 tr 0.1 tr 0.01 0 tf VCC = 1800 V VGE = 15 V RG = 10 ohm Tvj = 125 C L = 400 nH 250 0.1 0 500 Fig. 7 Typical switching times vs collector current 6 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 10 20 30 40 RG [ohm] IC [A] Fig. 8 Typical switching times vs gate resistor 50 60 70 20 100 VCC = 1800 V 15 Cies 10 C [nF] VGE [V] VCC = 2500 V 10 Coes 1 5 Cres VGE = 0 V f OSC = 1 MHz VOSC = 50 mV IC = 250 A Tvj = 25 C 0 0 0 Fig. 9 5 10 15 20 Vce [V] 25 30 Typical capacitances vs collector-emitter voltage Fig. 10 2.5 VCC 2500 V, Tvj = 150 C VGE = 15 V, RG = 10 ohm 2.0 ICpulse / IC 1.5 1.0 0.5 Chip Module 0.0 0 Fig. 11 500 1000 1500 2000 VCE [V] 2500 Turn-off safe operating area (RBSOA) 7 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 3000 0.0 35 3500 0.5 1.0 Qg [C] Typical gate charge characteristics 1.5 500 100 Tvj = 125 C Tvj = 150 C 250 Irr [A] RG = 3.3 ohm 400 200 0.5 RG = 22 ohm 1.0 1.5 2.0 di/dt [kA/s] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 500 500 450 450 400 400 350 350 VCC 2500 V di/dt 2500 A/s Tvj = 150 C L 400 nH 300 25 C IR [A] IF [A] 600 0 0.0 300 250 125 C 200 250 200 150 C 150 150 100 100 50 50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 VF [V] Fig. 14 Qrr 0 500 IF [A] Fig. 12 800 Tvj = 125 C Tvj = 150 C 0 0 200 100 VCC = 1800 V VGE = 15 V RG = 10 ohm L = 400 nH Erec Irr RG = 4.7 ohm 200 300 RG = 6.8 ohm Irr RG = 10 ohm 300 RG = 47 ohm Erec [mJ], Qrr [C] Erec [mJ], Irr [A], Qrr [C] 400 RG = 33 ohm Qrr RG = 68 ohm Erec 400 1000 VCC = 1800 V IF = 250 A L = 400 nH RG = 15 ohm 500 Typicial diode forward characteristics chip level 8 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 1000 2000 VR [V] Fig. 15 Safe operating area diode (SOA) 3000 4000 1 Analytical function for transient thermal impedance: Zth(j-c) [K/W] IGBT, DIODE n R i (1 - e -t/ i ) Z th (j-c) (t) = Zth(j-c) Diode 0.1 i 1 IGBT Zth(j-c) IGBT i 1 2 3 4 Ri(K/kW) 35.1 8.25 3.84 3.79 i(ms) 207.4 30.1 7.6 1.6 Ri(K/kW) 69.2 17.3 7.37 7.77 i(ms) 203.6 30.1 7.5 1.6 5 0.001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2053 Applying IGBT 5SYA 2058 Surge currents for IGBT diodes 5SYA 2093 Thermal Design of IGBT Modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is exclude 5SNA 0250P330305 | Doc. No. 5SYA 1426-00 05-2012 DIODE 0.01