©2000 Fairchild Semiconductor International
September 2000
SGH30N60RUF Rev. A
IGBT
SGH30N60RUF
SGH30N60RUF
Short Circuit Rated IGBT
General Description
Fairchild's Insulated Gate Bipolar Transistor(IGBT) RUF
series provides low conduction and switching losses as well
as short circuit ruggedness. RUF series is designed for the
applications such as motor control, UPS and general
inverters where short-circuit ruggedness is required.
Features
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 30A
• High Input Impedance
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteris ti cs
Symbol Description SGH30N60RUF Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage ± 20 V
ICCollector Current @ TC = 25°C48 A
Collector Current @ TC = 100°C30 A
ICM (1) Pulsed Collector Current 90 A
TSC Short Circuit Withstand Time @ TC =100°C10 us
PDMaximum Power Dissipation @ TC = 25°C 235 W
Maximum Power Dissipation @ TC = 100°C90 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TLMaximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds 300 °C
Symbol Parameter Typ. Max. Units
RθJC Thermal Resistance, Junction-to- Case -- 0.53 °C/W
RθJA Thermal Resistance, Junction-to- Am bient -- 40 °C/W
Application
AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls
G
C
E
G
C
E
GCETO-3P
©2000 Fairchild Semiconductor International SGH30N60RUF Rev. A
SGH30N60RUF
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/
∆TJ
Temperature Coeff. of Breakdown
Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/°C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteri st ics
VGE(th) G -E Th reshold Voltage IC = 30mA, VCE = VGE 5.0 6.0 8.5 V
VCE(sat) Collector to Emitter
Saturation V oltage IC = 30A, VGE = 15V -- 2.2 2.8 V
IC = 48A, VGE = 15V -- 2.5 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30V, VGE = 0V,
f = 1MHz
-- 1970 -- pF
Coes Output Capacitance -- 310 -- pF
Cres Reverse Transfer Capacitance -- 74 -- pF
Switching Characteristics
td(on) Turn- On Delay Time
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 25°C
-- 30 -- ns
trRise Time -- 65 -- ns
td(off) Turn-Off D e l a y Time -- 54 80 ns
tfFall Time -- 138 200 ns
Eon Turn-On Switching Loss -- 919 -- uJ
Eoff Tu r n - Off Sw i tchin g Loss -- 81 4 -- uJ
Ets Total Switching Loss -- 1733 2430 uJ
td(on) Turn- On Delay Time
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 125°C
-- 34 -- ns
trRise Time -- 67 -- ns
td(off) Turn-Off D e l a y Time -- 60 90 ns
tfFall Time -- 281 400 ns
Eon Turn-On Switching Loss -- 921 -- uJ
Eoff Turn- Off Sw it ching Loss -- 1556 -- uJ
Ets Total Switching Loss -- 2477 3470 uJ
Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V
@ TC = 100°C 10 -- -- us
QgTotal Gate Charge VCE = 300 V, IC = 30A,
VGE = 15V
-- 85 120 nC
Qge Gate-Emitter Charge -- 17 25 nC
Qgc Gate-Collector Charge -- 39 55 nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2000 Fairchild Semiconductor International SGH30N60RUF Rev. A
SGH30N60RUF
Fig 1. Ty pical Out put C har ac terist ics Fig 2. Typical Saturation Voltage Characteristics
Fig 3. Saturation Vo ltage vs. Case
Temperature at Variant Current Level Fig 4. Load Curre nt vs. Freque ncy
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
02468
0
10
20
30
40
50
60
70
80
90 20V
12V
15V
VGE = 10V
Common Emitter
TC = 25℃
Collector Current, I
C [A]
Collec tor - Em itter Voltage, VCE [V]
110
0
10
20
30
40
50
60
70
80
90
Common Emitter
VGE = 15V
TC = 25℃ ━━
TC = 125 ℃ - -----
Collector Current, I
C [A]
Collector - Emitter Voltage, VCE [V]
-50 0 50 100 150
0
1
2
3
4
5
30A
60A
45A
IC = 15A
Common Emitter
VGE = 15V
Co llect or - Emitter Voltage, V
CE [V]
Case Tem perature, TC [℃]
4 8 12 16 20
0
4
8
12
16
20 Common Emitter
TC = 25℃
60A
30A
IC = 15A
Collect or - Emit ter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20 Comm on Emitter
TC = 125℃
60A
30A
IC = 15A
Collector - Emitter Voltage, V
CE [V]
Gate - Emitter Voltage, VGE [V]
0
5
10
15
20
25
30
35
40
0.1 1 10 100 1000
Duty cycle : 50%
TC = 100℃
Power Dissipation = 45W
VCC = 300V
Load Curren t : p eak of s q uar e w ave
Frequency [KHz]
Load Current [A]
©2000 Fairchild Semiconductor International SGH30N60RUF Rev. A
SGH30N60RUF
Fig 7. Capacitance Characteristics Fig 8. Turn-O n Characteri st i cs vs .
Gate Resistance
Fig 9 . Turn-Off C haracte ri st i cs vs.
Gate Resistance Fig 10. S witching Loss vs. G at e Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current Fig 12. Tur n-Of f Ch ar act er i st ic s vs .
Collector Current
110
0
500
1000
1500
2000
2500
3000
3500
Cres
Coes
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
110100
10
100
1000 Common Emitter
VCC = 300V, VGE = ±15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------ Ton
Tr
Switching Time [ns]
Gate Resistance, RG [Ω]
110100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
VCC = 300V, VGE = ±15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
Swi t chin g Time [ n s]
Gate Resistance, RG [Ω]
110100
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ±15V
IC = 30A
TC = 25℃ ━━
TC = 125℃ ------
Switching Loss [uJ]
Gate Resistance, RG [ Ω]
15 30 45 60
10
100
1000
Ton
Tr
Com m o n E m it t er
VGE = ±15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Switching Time [ns]
Collector Curre nt, I C [A]
15 30 45 60
100
1000
Tf
Toff
Toff
Tf
Comm o n E mitter
VGE = ±15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Switching Time [ns]
Collector Current, IC [A]
©2000 Fairchild Semiconductor International SGH30N60RUF Rev. A
SGH30N60RUF
Fig 14. Gate C harge Char acteristi cs
Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics
Fig 17. Tra nsien t The rma l Imped anc e of IGBT
Fig 13. Sw itching Loss vs. C ol lector Current
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 20V, TC = 100℃
Collector C urrent, I
C [A]
Collector-Emitter Voltage, VCE [V]
15 30 45 60
100
1000
10000
Eoff
Eon
Eoff
Common Emitter
VGE = ±15V, RG = 7Ω
TC = 25℃ ━━
TC = 125℃ ------
Swi t chin g Lo ss [uJ]
Collector Curre nt, I C [A]
0 20406080100
0
3
6
9
12
15
200 V
300 V
VCC = 10 0 V
Common Emitter
RL = 10Ω
TC = 25℃
Gate - Emitter Voltage, V
GE [ V ]
Gate Charge, Qg [ nC ]
0.3 1 10 100 1000
0.1
1
10
100
200
Single Nonrepetitive
Pulse TC = 25℃
Curves must be derated
linearl y wit h i ncreas e
in temperature
50us
100us
1㎳
DC Operation
IC MAX. (C on ti nuous)
IC MAX. (P ul s e d)
Collector Current, I
C [A]
Collector-Emitter Voltage, VCE [V]
10-5 10-4 10-3 10-2 10-1 100101
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
Therm al Response, Zth j c [℃/W]
Rectangu lar Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
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Advance Information Formative or In
Design This datasheet contains the design specifications for
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changes at any time without notice in order to improve
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The datasheet is printed for reference information only.
Rev. F1
