AO Re lMOS S This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear Pel FIELD EFFECT POWER TRANSISTOR IRFF320,321 2.5 AMPERES 400, 350 VOLTS DS(ON) = 1.89 Preliminary ZB N-CHANNEL CASE STYLE TO-205AF (TO-39) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) 0.350-0.370 transfer characteristics makes it well suited for many linear eae applications such as audio amplifiers and servo motors. fH ror abey Features ae eae Polysilicon gate Improved stability and reliability Thr eT SRLANE 6.009-0.018 Ji Yo Y3 ~~ prain No secondary breakdown Excellent ruggedness (0.228-0.487) GATE 4 . . 0.076-0.01 Ultra-fast switching Independent of temperature (a70 {0.406-0 465) * iene . (4.826-5.334) Voltage controlled High transconductance $y 2 J e Low input capacitance Reduced drive requirement ome 08s om " eh . 0.028-0.034 a= e Excellent thermal stability Ease of paralleling ori-0.808) YY Q a a [ee | termi | Term | TerM3 | {_to-zosar | source | GATE | DRAIN | maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFF320 IRFF321 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Ras = 1MO VocrR 400 350 Volts Continuous Drain Current @ To = 25C Ip 2.5 2.5 A Pulsed Drain Current lpm 10 10 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 20 20 Watts Derate Above 25C 0.16 0.16 WC Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 6.25 6.25 C/W Thermal Resistance, Junction to Ambient Resa 175 175 CIWN Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 285 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFF320 BVpss 400 _ Volts (Vag = OV, Ip = 250 WA) IRFF321 | ~ 350 Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vgg = OV, Tc = 25C) _ _ 250 uA (Vpg = Max Rating, x 0.8, Vgg = OV, To = 125C) 1000 Gate-Source Leakage Current (V@s = 20V) lass _ _ +100 nA on characteristics* Gate Threshold Voltage To = 25C | Vast) 2.0 _ 4.0 Volts (Vps = Vas, !p = 250 pA) On-State Drain Current | 25 _ A (Vag = 10V, Vpg = 10V) D(ON) " Static Drain-Source On-State Resistance (Vgg = 10V, Ip = 1.25A) Rps(ON) 1.8 Ohms Forward Transconductance _ _ (Vpg = 10V, Ip = 1.25A) Sts 0.8 mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ 600 pF Output Capacitance Vos = 25V Coss _ _ 200 pF Reverse Transfer Capacitance f=1MHz Crss _ 40 pF switching characteristics* Turn-on Delay Time Vos = 175V td(on} _ 20 _ ns Rise Time Ip = 1.25A, Vag = 15V tr _ 25 _ ns Turn-off Delay Time RGEN = 500, Reg = 12.59, ta(off) _ 50 _ ns Fall Time (Res (EQuiv.,) = 109) tf _ 25 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is 2.5 A Pulsed Source Current Ism _ _ 10 A Diode Forward Voltage _ _ (To = 25C, Vg = OV, Ig = 2.5A) Vsp 1.6 Volts Reverse Recovery Time trr _ 450 ns (Ig = 2.5A, dl,/dt = 100A/psec, To = 125C) Qrr 3.1 _ uC Pulse Test: Pulse width < 300 ps, duty cycle = 2% c= 26C Ty = 150C MAX. Rthuc = 8.25 K/W PULSE OPERATION IN THIS AREA IS LIMITED BY Apgion} 1 2 4 6 8 10 20 40 60 80 100 Vrs, DRAIN-TO-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 286 CONDITIONS: RDg(ON) CONDITIONS: Ip = 1.25A, Vqg = 10V Va@s(TH) CONDITIONS: Ip = 250uA, Vpg = Veg Roston; AND Vegiris) NORMALIZED 40 0 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rosion) AND Vasitn) VS. TEMP. 120 160