SM15T Series
Vishay General Semiconductor
Document Number: 88380
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• 1500 W peak pulse power capability with a
10/1000 µs waveform
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Low inductance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
APPLICATION NOTES
A 1500 W (SMC) device is normally selected when the
threat of transients is from lightning induced transients,
conducted via external leads or I/O lines. It is also used
to protect against switching transients induced by
large coils or industrial motors. Source impedance at
component level in a system is usually high enough to
limit the current within the peak pulse current (IPP)
rating of this series. In an overstress condition, the
failure mode is a short circuit.
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AB (SMC)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
SM15T12CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VBR 6.8 V to 220 V
PPPM 1500 W
PD6.5 W
IFSM (uni-directional only) 200 A
TJ max. 150 °C
DO-214AB (SMC)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) PPPM 1500 W
Peak power pulse current with a 10/1000 µs waveform (1) (Fig. 3) IPPM See next table A
Power dissipation on infinite heatsink TA = 50 °C PD6.5 W
Peak forward surge current 10 ms single half sine-wave uni-directional only (2) IFSM 200 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
SM15T Series
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88380
Revision: 21-Oct-08
2
Notes:
(1) For bi-directional devices add suffix “CA” instead of “A”
(2) VBR measured after IT applied for 300 µs square wave pulse
(3) For bipolar devices with VR = 10 V or under, the IT limit is doubled
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TYPE
(1)
DEVICE
MARKING
CODE
STAND-
OFF
VOLTAGE
VRM (V)
LEAKAGE
CURRENT (3)
IRM AT VR
BREAKDOWN
VOLTAGE
V
BR
AT I
T
(2)
(V)
TEST
CURRENT
I
T
(mA)
CLAMPING
VOLTAGE
VC AT IPP
(10/1000 µs)
CLAMPING
VOLTAGE
VC
AT I
PP
(8/20 µs)
αT
Max.
10-4/°C
UNI BI
MIN. MAX.
(V) (A) (V) (A)
SM15T6V8A GDE7 GDE7 5.80 1000 6.45 7.14 10 10.5 143 13.4 746 5.7
SM15T7V5A GDK7 BDK7 6.40 500 7.13 7.88 10 11.3 132 14.5 690 6.1
SM15T10A GDT7 BDT7 8.55 10.0 9.50 10.5 1.0 14.5 103 18.6 538 7.3
SM15T12A GDX7 BDX7 10.2 5.0 11.4 12.6 1.0 16.7 90.0 21.7 461 7.8
SM15T15A GEG7 GEG7 12.8 1.0 14.3 15.8 1.0 21.2 71.0 27.2 368 8.4
SM15T18A GEM7 BEM7 15.3 1.0 17.1 18.9 1.0 25.2 59.5 32.5 308 8.8
SM15T22A GET7 BET7 18.8 1.0 20.9 23.1 1.0 30.6 49.0 39.3 254 9.2
SM15T24A GEV7 GEV7 20.5 1.0 22.8 25.2 1.0 33.2 45.0 42.8 234 9.4
SM15T27A GEX7 BEX7 23.1 1.0 25.7 28.4 1.0 37.5 40.0 48.3 207 9.6
SM15T30A GFE7 BFE7 25.6 1.0 28.5 31.5 1.0 41.5 36.0 53.5 187 9.7
SM15T33A GFG7 GFG7 28.2 1.0 31.4 34.7 1.0 45.7 33.0 59.0 169 9.8
SM15T36A GFK7 BFK7 30.8 1.0 34.2 37.8 1.0 49.9 30.0 64.3 156 9.9
SM15T39A GFM7 BFM7 33.3 1.0 37.1 41.0 1.0 53.9 28.0 69.7 143 10.0
SM15T68A GGG7 GGG7 58.1 1.0 64.6 71.4 1.0 92.0 16.3 121 83 10.4
SM15T100A GGV7 GGV7 85.5 1.0 95.0 105 1.0 137 11.0 178 56 10.6
SM15T150A GHK7 GHK7 128 1.0 143 158 1.0 207 7.20 265 38 10.8
SM15T200A GHR7 GHR7 171 1.0 190 210 1.0 274 5.50 353 28 10.8
SM15T220A GHR8 GHR8 188 1.0 209 231 1.0 328 4.60 388 26 10.8
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Typical thermal resistance, junction to ambient air (1) RθJA 75 °C/W
Typical thermal resistance, junction to leads RθJL 15 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SM15T10A-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
SM15T10A-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
SM15T10AHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel
SM15T10AHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel
SM15T Series
Vishay General Semiconductor
Document Number: 88380
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
0.1
1
10
100
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
0.31 x 0.31" (8.0 x 8.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
0 25 50 75 100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
0
50
100
150
t
r
= 10 µs
Peak Value
IPPM
Half Value -
IPPM
I
PP
2
t
d
10/1000 µs Waveform
as defined by R.E.A.
01.0 2.0 3.0 4.0
t - Time (ms)
I
PPM
- Peak Pulse Current, % I
RSM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
Figure 4. Typical Junction Capacitance Uni-Directional
Figure 5. Typical Transient Thermal Impedance
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
10
100
1000
10 000
20 000
101 100 400
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Zero Bias
V
R
, Measured at
Stand-Off
Voltage, V
WM
C
J
- Junction Capacitance (pF)
V
WM
- Reverse Stand-Off Voltage (V)
0.1
1.0
10
100
0.001 0.01 0.1 10 1 100 1000
t - Pulse Duration
(
s
)
Transient Thermal Impedance (°C/W)
1
10
100
10
100
200
TJ = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
SM15T Series
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88380
Revision: 21-Oct-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC)
0.320 REF.
Mounting Pad Layout
0 (0)
0.185 (4.69)
MAX.
0.126 (3.20)
MIN.
0.060 (1.52)
MIN.
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Revision: 12-Mar-12 1Document Number: 91000
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