SM15T Series Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * 1500 W peak pulse power capability with a 10/1000 s waveform * Available in uni-directional and bi-directional * Excellent clamping capability * Low inductance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-214AB (SMC) PRIMARY CHARACTERISTICS VBR 6.8 V to 220 V PPPM 1500 W PD 6.5 W IFSM (uni-directional only) 200 A TJ max. 150 C MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SM15T12CA). Electrical characteristics apply in both directions. APPLICATION NOTES A 1500 W (SMC) device is normally selected when the threat of transients is from lightning induced transients, conducted via external leads or I/O lines. It is also used to protect against switching transients induced by large coils or industrial motors. Source impedance at component level in a system is usually high enough to limit the current within the peak pulse current (IPP) rating of this series. In an overstress condition, the failure mode is a short circuit. TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation with a 10/1000 s waveform (1)(2) (Fig. 1) Peak power pulse current with a 10/1000 s waveform (1) (Fig. 3) Power dissipation on infinite heatsink TA = 50 C Peak forward surge current 10 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range LIMIT UNIT PPPM 1500 W IPPM See next table A PD 6.5 W IFSM 200 A TJ, TSTG - 65 to + 150 C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2 (2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal Document Number: 88380 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SM15T Series Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE MARKING CODE TYPE (1) STANDOFF VOLTAGE VRM (V) LEAKAGE BREAKDOWN VOLTAGE CURRENT (3) IRM AT VR VBR AT IT (2) (V) MIN. MAX. 1000 6.45 7.14 UNI BI SM15T6V8A GDE7 GDE7 5.80 SM15T7V5A GDK7 BDK7 6.40 500 7.13 SM15T10A GDT7 BDT7 8.55 10.0 9.50 TEST CURRENT IT (mA) CLAMPING VOLTAGE VC AT IPP (10/1000 s) CLAMPING VOLTAGE VC AT IPP (8/20 s) T Max. 10-4/C (V) (A) (V) (A) 10 10.5 143 13.4 746 7.88 10 11.3 132 14.5 690 6.1 10.5 1.0 14.5 103 18.6 538 7.3 5.7 SM15T12A GDX7 BDX7 10.2 5.0 11.4 12.6 1.0 16.7 90.0 21.7 461 7.8 SM15T15A GEG7 GEG7 12.8 1.0 14.3 15.8 1.0 21.2 71.0 27.2 368 8.4 SM15T18A GEM7 BEM7 15.3 1.0 17.1 18.9 1.0 25.2 59.5 32.5 308 8.8 SM15T22A GET7 BET7 18.8 1.0 20.9 23.1 1.0 30.6 49.0 39.3 254 9.2 SM15T24A GEV7 GEV7 20.5 1.0 22.8 25.2 1.0 33.2 45.0 42.8 234 9.4 SM15T27A GEX7 BEX7 23.1 1.0 25.7 28.4 1.0 37.5 40.0 48.3 207 9.6 SM15T30A GFE7 BFE7 25.6 1.0 28.5 31.5 1.0 41.5 36.0 53.5 187 9.7 SM15T33A GFG7 GFG7 28.2 1.0 31.4 34.7 1.0 45.7 33.0 59.0 169 9.8 SM15T36A GFK7 BFK7 30.8 1.0 34.2 37.8 1.0 49.9 30.0 64.3 156 9.9 SM15T39A GFM7 BFM7 33.3 1.0 37.1 41.0 1.0 53.9 28.0 69.7 143 10.0 SM15T68A GGG7 GGG7 58.1 1.0 64.6 71.4 1.0 92.0 16.3 121 83 10.4 SM15T100A GGV7 GGV7 85.5 1.0 95.0 105 1.0 137 11.0 178 56 10.6 SM15T150A GHK7 GHK7 128 1.0 143 158 1.0 207 7.20 265 38 10.8 SM15T200A GHR7 GHR7 171 1.0 190 210 1.0 274 5.50 353 28 10.8 SM15T220A GHR8 GHR8 188 1.0 209 231 1.0 328 4.60 388 26 10.8 Notes: (1) For bi-directional devices add suffix "CA" instead of "A" (2) VBR measured after IT applied for 300 s square wave pulse (3) For bipolar devices with VR = 10 V or under, the IT limit is doubled THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient air (1) RJA 75 C/W Typical thermal resistance, junction to leads RJL 15 C/W Note: (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SM15T10A-E3/57T 0.211 57T 850 7" diameter plastic tape and reel SM15T10A-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel SM15T10AHE3/57T (1) 0.211 57T 850 7" diameter plastic tape and reel SM15T10AHE3/9AT (1) 0.211 9AT 3500 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88380 Revision: 21-Oct-08 SM15T Series Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 20 000 100 Measured at Zero Bias 10 1 0.31 x 0.31" (8.0 x 8.0 mm) Copper Pad Areas 0.1 0.1 s 1000 VR, Measured at Stand-Off Voltage, VWM 100 Uni-Directional Bi-Directional TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 1.0 s 10 s 100 s 1.0 ms 1 10 ms 10 100 400 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Figure 1. Peak Pulse Power Rating Curve Figure 4. Typical Junction Capacitance Uni-Directional 100 100 Transient Thermal Impedance (C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 10 000 75 50 25 25 50 75 100 125 150 175 1.0 0.1 0.001 0 0 10 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (C) t - Pulse Duration (s) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 5. Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. 100 TJ = TJ max. 8.3 ms Single Half Sine-Wave td 0 10 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Figure 3. Pulse Waveform Figure 6. Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only Document Number: 88380 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 SM15T Series Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AB (SMC) Mounting Pad Layout Cathode Band 0.185 (4.69) MAX. 0.126 (3.20) 0.246 (6.22) 0.220 (5.59) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.060 (1.52) MIN. 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.320 REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88380 Revision: 21-Oct-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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