©2005 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
RHRP3060 Rev. C
RHRP3060 30A, 600V Hyperfast Diodes
April 2005
RHRP3060
30A, 600V Hyperfast Diodes
Features
Hyperfast with Soft Recovery ........................ <40ns
Operating Temperature ..................................175°C
Reverse Voltage Up To ..................................600V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Ordering Informations
Note: When opdering, use the entire part number.
Description
The RHRP3060 are hypersast diodes with soft recovery charac-
teristics (
trr
< 40ns). They have half the recovery time of ultrafast
diodes and are of silicon nitride passivated ion-implanted epi-
taxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49063.
Absolute Maximum Ratings
Part Number Package Brand
RHRP3060 TO-220AC RHRP3060
K
A
JEDEC TO-220AC
Packaging Symbol
ANODE
CATHODE
Symbol Parameter RHRP3060 Units
V
RRM
Peak Repetitive Reverse Voltage 600 V
V
RWM
Working Peak Reverse Voltage 600 V
V
R
DC Blocking Voltage 600 V
I
F(AV)
Average Rectified Forward Current (T
C
= 120°C) 30 A
I
FRM
Repetitive Peak Surge Current (Square Wave, 20KHz) 70 A
I
FSM
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
325 A
P
D
Maximum Power Dissipation 125 W
E
AVL
Avalanche Energy (See Figures 10 and 11) 20 mJ
T
J
, T
STG
Operating and Storage Temperature -65 to 175 °C
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RHRP3060 Rev. C
RHRP3060 30A, 600V Hyperfast Diodes
Electrical Characteristics
T
C
= 25°C unless otherwise noted
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300µs, D = 2%)
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θJC
= Thermal resistance junction to case.
pw = pulse width.
D = Duty cycle.
Symbol Test Conditions RHRP3060 Units
Min. Typ. Max.
V
F
I
F
= 30A - - 2.1 V
I
F
= 30A, T
C
= 150°C--1.7V
I
R
V
R
= 400V - - - µA
V
R
= 600V - - 250 µA
V
R
= 400V, T
C
= 150°C---mA
V
R
= 600V, T
C
= 150°C--1.0mA
t
rr
I
F
= 1A, dl
F
/dt = 200A/µs--40ns
I
F
= 30A, dl
F
/dt = 200A/µs--45ns
t
a
I
F
= 30A, dl
F
/dt = 200A/µs-22-ns
t
b
I
F
= 30A, dl
F
/dt = 200A/µs-18-ns
Q
RR
I
F
= 30A, dl
F
/dt = 200A/µs - 100 - nC
C
J
V
R
= 600V, I
F
= 0A - 85 - pF
R
θJC
--1.2°C/W
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RHRP3060 Rev. C
RHRP3060 30A, 600V Hyperfast Diodes
Typical Performance Characteristics
Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Currnt vs Reverse Voltage
Figure 3. t
rr
, t
a
and t
b
Curves vs
Forward Current
Figure 4. t
rr
, t
a
and t
b
Curves vs
Forward Current
Figure 5. t
rr
, t
a
and t
b
Curves vs
Forward Current
Figure 6. Current Derating Curve
100°C
175°C
175°C
100°C
25°C
t
rr
t
a
t
b
TC = 25°C, dlF/dt = 200A/µs
t
rr
t
a
t
b
TC = 100°C, dlF/dt = 200A/µs
t
rr
t
a
t
b
TC = 175°C, dlF/dt = 200A/µs
SQ.WAVE
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RHRP3060 Rev. C
RHRP3060 30A, 600V Hyperfast Diodes
Typical Performance Characteristics
(Continued)
Test Circuit and Waveforms
Figure 7. Junction Capacitance vs
Reverse Voltage
Figure 8. t
rr
Test Circuit Figure 9. t
rr
Waveforms and Definitions
Figure 10. Avalanche Energy Test Circuit Figure 11. Avalanche Current and Voltage
Waveforms
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
5www.fairchildsemi.com
RHRP3060 Rev. C
RHRP3060 30A, 600V Hyperfast Diodes
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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