Product Datasheet Search Results:

1N950.pdf4 Pages, 258 KB, Scan
1N950
Codi Semiconductor, Inc.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950.pdf3 Pages, 176 KB, Scan
1N950
Crystalonics
Voltage Variable Capacitance Diodes Data Book 1976
1N950.pdf1 Pages, 96 KB, Original
1N950
Eastron Corp.
Capacitance Diodes
1N950A.pdf1 Pages, 30 KB, Scan
1N950A
Eastron Corp.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950B.pdf1 Pages, 30 KB, Scan
1N950B
Eastron Corp.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950.pdf1 Pages, 71 KB, Scan
1N950
Loral
130V Vrrm, 35pF Capacitance Varactor Diode
1N950.pdf2 Pages, 260 KB, Scan
1N950
Motorola
Motorola Semiconductor Datasheet Library
1N950.pdf1 Pages, 53 KB, Scan
1N950
Knox Semiconductor, Inc.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950A.pdf1 Pages, 53 KB, Scan
1N950A
Knox Semiconductor, Inc.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950B.pdf1 Pages, 53 KB, Scan
1N950B
Knox Semiconductor, Inc.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950C.pdf1 Pages, 53 KB, Scan
1N950C
Knox Semiconductor, Inc.
130V Vrrm, 35pF Capacitance Varactor Diode
1N950D.pdf1 Pages, 53 KB, Scan
1N950D
Knox Semiconductor, Inc.
130V Vrrm, 35pF Capacitance Varactor Diode

Product Details Search Results:

Various/1N950
{"C1/C2 Min. Capacitance Ratio":"2.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"130","Semiconductor Material":"Silicon","Q Factor Min.":"7.0","Package":"DO-14","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"35p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
714 Bytes - 16:19:14, 25 November 2024
Various/1N950A
{"@Freq. (Hz) (Test Condition)":"50M","Semiconductor Material":"Silicon","V(RRM)(V) Rep.Pk.Rev. Voltage":"130","Q Factor Min.":"7.0","Package":"DO-7","Ct{Cj} Nom. (F) Junction Cap.":"35p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
681 Bytes - 16:19:14, 25 November 2024
Various/1N950B
{"@Freq. (Hz) (Test Condition)":"50M","Semiconductor Material":"Silicon","V(RRM)(V) Rep.Pk.Rev. Voltage":"130","Q Factor Min.":"39","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","Ct{Cj} Nom. (F) Junction Cap.":"35p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...
720 Bytes - 16:19:14, 25 November 2024
Various/1N950C
{"C1/C2 Min. Capacitance Ratio":"2.5","Semiconductor Material":"Silicon","Q Factor Min.":"7.0","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","V(RRM)(V) Rep.Pk.Rev. Voltage":"130","Ct{Cj} Nom. (F) Junction Cap.":"35p","Military":"N"}...
682 Bytes - 16:19:14, 25 November 2024
Various/1N950D
{"C1/C2 Min. Capacitance Ratio":"2.5","Semiconductor Material":"Silicon","Q Factor Min.":"7.0","Package":"DO-7","P(D) Max.(W) Power Dissipation":"400m","V(RRM)(V) Rep.Pk.Rev. Voltage":"130","Ct{Cj} Nom. (F) Junction Cap.":"35p","Military":"N"}...
683 Bytes - 16:19:14, 25 November 2024

Documentation and Support

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